FDB035N10A

Fairchild/ON Semiconductor FDB035N10A

Part Number:
FDB035N10A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3554150-FDB035N10A
Description:
MOSFET N-CH 100V 120A D2PAK
ECAD Model:
Datasheet:
FDB035N10A

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Specifications
Fairchild/ON Semiconductor FDB035N10A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB035N10A.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    1.31247g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    3.5MOhm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    333W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    333W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    22 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.5m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7295pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    116nC @ 10V
  • Rise Time
    54ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    37 ns
  • Continuous Drain Current (ID)
    214A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    704A
  • Avalanche Energy Rating (Eas)
    558 mJ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDB035N10A Description
The FDB035N10A N-Channel MOSFET from ON Semiconductor is manufactured utilizing an innovative PowerTrench? process that has been optimized to minimize on-state resistance while preserving exceptional switching performance.

FDB035N10A Features
Fast Switching Speed
Low Gate Charge, QG = 89nC ( Typ.)
High-Performance Trench Technology for Extremely Low RDS(on)
RDS(on) = 3.0m? ( Typ.)@ VGS = 10V, ID = 75A
High Power and Current Handling Capability
RoHS Compliant

FDB035N10A Applications
AC-DC Merchant Power Supply - Desktop PC
Uninterruptible Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
Electric Bike
FDB035N10A More Descriptions
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
Trans MOSFET N-CH 100V 214A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to FDB035N10A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    HTS Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Threshold Voltage
    REACH SVHC
    View Compare
  • FDB035N10A
    FDB035N10A
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    3.5MOhm
    Tin (Sn)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    333W Tc
    Single
    ENHANCEMENT MODE
    333W
    DRAIN
    22 ns
    N-Channel
    SWITCHING
    3.5m Ω @ 75A, 10V
    4V @ 250μA
    7295pF @ 25V
    120A Tc
    116nC @ 10V
    54ns
    10V
    ±20V
    11 ns
    37 ns
    214A
    20V
    100V
    704A
    558 mJ
    4.83mm
    10.67mm
    9.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • FDB0170N607L
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab)
    -
    1.312g
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3.8W Ta 250W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    1.4m Ω @ 39A, 10V
    4V @ 250μA
    19250pF @ 30V
    300A Tc
    243nC @ 10V
    -
    10V
    ±20V
    -
    -
    300A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8541.29.00.95
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    60V
    -
    -
  • FDB031N08
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.762g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    3.1MOhm
    Tin (Sn)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    230 ns
    N-Channel
    SWITCHING
    3.1m Ω @ 75A, 10V
    4.5V @ 250μA
    15160pF @ 25V
    120A Tc
    220nC @ 10V
    191ns
    10V
    ±20V
    121 ns
    335 ns
    235A
    20V
    75V
    940A
    -
    4.83mm
    10.67mm
    11.33mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FDB0260N1007L
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab)
    7
    1.312g
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3.8W Ta 250W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    2.6m Ω @ 27A, 10V
    4V @ 250μA
    8545pF @ 50V
    200A Tc
    118nC @ 10V
    -
    10V
    ±20V
    -
    -
    200A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8541.29.00.95
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    100V
    2.8V
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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