Fairchild/ON Semiconductor FDB035N10A
- Part Number:
- FDB035N10A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3554150-FDB035N10A
- Description:
- MOSFET N-CH 100V 120A D2PAK
- Datasheet:
- FDB035N10A
Fairchild/ON Semiconductor FDB035N10A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB035N10A.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.31247g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance3.5MOhm
- Terminal FinishTin (Sn)
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max333W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation333W
- Case ConnectionDRAIN
- Turn On Delay Time22 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7295pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs116nC @ 10V
- Rise Time54ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time37 ns
- Continuous Drain Current (ID)214A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)704A
- Avalanche Energy Rating (Eas)558 mJ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDB035N10A Description
The FDB035N10A N-Channel MOSFET from ON Semiconductor is manufactured utilizing an innovative PowerTrench? process that has been optimized to minimize on-state resistance while preserving exceptional switching performance.
FDB035N10A Features
Fast Switching Speed
Low Gate Charge, QG = 89nC ( Typ.)
High-Performance Trench Technology for Extremely Low RDS(on)
RDS(on) = 3.0m? ( Typ.)@ VGS = 10V, ID = 75A
High Power and Current Handling Capability
RoHS Compliant
FDB035N10A Applications
AC-DC Merchant Power Supply - Desktop PC
Uninterruptible Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
Electric Bike
The FDB035N10A N-Channel MOSFET from ON Semiconductor is manufactured utilizing an innovative PowerTrench? process that has been optimized to minimize on-state resistance while preserving exceptional switching performance.
FDB035N10A Features
Fast Switching Speed
Low Gate Charge, QG = 89nC ( Typ.)
High-Performance Trench Technology for Extremely Low RDS(on)
RDS(on) = 3.0m? ( Typ.)@ VGS = 10V, ID = 75A
High Power and Current Handling Capability
RoHS Compliant
FDB035N10A Applications
AC-DC Merchant Power Supply - Desktop PC
Uninterruptible Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
Electric Bike
FDB035N10A More Descriptions
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
Trans MOSFET N-CH 100V 214A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET N-CH 100V 214A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to FDB035N10A.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal FormJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeHTS CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Threshold VoltageREACH SVHCView Compare
-
FDB035N10AACTIVE (Last Updated: 4 days ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.31247gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2013e3yesActive1 (Unlimited)2EAR993.5MOhmTin (Sn)ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21333W TcSingleENHANCEMENT MODE333WDRAIN22 nsN-ChannelSWITCHING3.5m Ω @ 75A, 10V4V @ 250μA7295pF @ 25V120A Tc116nC @ 10V54ns10V±20V11 ns37 ns214A20V100V704A558 mJ4.83mm10.67mm9.65mmNoROHS3 CompliantLead Free--------
-
ACTIVE (Last Updated: 4 days ago)16 WeeksSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)-1.312g--55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)-EAR99-Tin (Sn)--MOSFET (Metal Oxide)---3.8W Ta 250W TcSingle----N-Channel-1.4m Ω @ 39A, 10V4V @ 250μA19250pF @ 30V300A Tc243nC @ 10V-10V±20V--300A--------ROHS3 Compliant-8541.29.00.95NOT SPECIFIEDnot_compliantNOT SPECIFIED60V--
-
ACTIVE (Last Updated: 4 days ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.762gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)2EAR993.1MOhmTin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21375W TcSingleENHANCEMENT MODE375WDRAIN230 nsN-ChannelSWITCHING3.1m Ω @ 75A, 10V4.5V @ 250μA15160pF @ 25V120A Tc220nC @ 10V191ns10V±20V121 ns335 ns235A20V75V940A-4.83mm10.67mm11.33mmNoROHS3 CompliantLead Free-------
-
ACTIVE (Last Updated: 4 days ago)16 WeeksSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)71.312g--55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)-EAR99-Tin (Sn)--MOSFET (Metal Oxide)---3.8W Ta 250W TcSingle----N-Channel-2.6m Ω @ 27A, 10V4V @ 250μA8545pF @ 50V200A Tc118nC @ 10V-10V±20V--200A--------ROHS3 Compliant-8541.29.00.95NOT SPECIFIEDnot_compliantNOT SPECIFIED100V2.8VNo SVHC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
21 November 2023
MCP2551 CAN Transceiver Features, Working Principle, MCP2551 vs TJA1050
Ⅰ. Overview of MCP2551 transceiverⅡ. Manufacturer of MCP2551 transceiverⅢ. Features of MCP2551 transceiverⅣ. Working principle of MCP2551 transceiverⅤ. Block diagram of MCP2551 transceiverⅥ. What is the difference between... -
21 November 2023
AD9361 RF Transceiver Manufacturer, Features, Structure and Working Principle
Ⅰ. Overview of AD9361 RF transceiverⅡ. Manufacturer of AD9361 RF transceiverⅢ. Block diagram of AD9361 RF transceiverⅣ. Structure and working principle of AD9361 RF transceiverⅤ. Features of AD9361... -
22 November 2023
ULN2804A Transistor Array Equivalents, Symbol, Working Principle and More
Ⅰ. Overview of ULN2804AⅡ. Symbol, footprint and pin configuration of ULN2804AⅢ. Manufacturer of ULN2804AⅣ. Features of ULN2804AⅤ. Technical parameters of ULN2804AⅥ. Working principle of ULN2804AⅦ. Applications of ULN2804AⅧ.... -
22 November 2023
An Overview of 74HC373 Octal Transparent D Type Latch
Ⅰ. Overview of 74HC373Ⅱ. Manufacturer of 74HC373Ⅲ. Pin configuration and functions of 74HC373Ⅳ. What are the features of 74HC373?Ⅴ. Technical parameters of 74HC373Ⅵ. What are the applications of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.