Fairchild/ON Semiconductor FDB024N04AL7
- Part Number:
- FDB024N04AL7
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2849294-FDB024N04AL7
- Description:
- MOSFET N-CH 40V D2PAK-7
- Datasheet:
- FDB024N04AL7
Fairchild/ON Semiconductor FDB024N04AL7 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB024N04AL7.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab)
- Number of Pins7
- Weight1.312g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- JESD-30 CodeR-PSSO-G6
- Number of Elements1
- Power Dissipation-Max214W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation214W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.4m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs109nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time71 ns
- Continuous Drain Current (ID)219A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0024Ohm
- Drain to Source Breakdown Voltage40V
- Avalanche Energy Rating (Eas)864 mJ
- Height9.4mm
- Length10.8mm
- Width4.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDB024N04AL7 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 864 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 219A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 71 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
FDB024N04AL7 Features
the avalanche energy rating (Eas) is 864 mJ
a continuous drain current (ID) of 219A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 71 ns
a threshold voltage of 1V
FDB024N04AL7 Applications
There are a lot of ON Semiconductor
FDB024N04AL7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 864 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 219A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 71 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
FDB024N04AL7 Features
the avalanche energy rating (Eas) is 864 mJ
a continuous drain current (ID) of 219A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 71 ns
a threshold voltage of 1V
FDB024N04AL7 Applications
There are a lot of ON Semiconductor
FDB024N04AL7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDB024N04AL7 More Descriptions
Trans MOSFET N-CH 40V 219A 7-Pin(6 Tab) D2PAK T/R
N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ
Chip Resistor - Surface Mount 165kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 165K OHM 1% 1/10W 0402
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 40V, 100A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ
Chip Resistor - Surface Mount 165kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 165K OHM 1% 1/10W 0402
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 40V, 100A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The three parts on the right have similar specifications to FDB024N04AL7.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal FormJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusResistancePulsed Drain Current-Max (IDM)Lead FreeContact PlatingPublishedVoltage - Rated DCCurrent RatingDrain Current-Max (Abs) (ID)View Compare
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FDB024N04AL7ACTIVE (Last Updated: 4 days ago)16 WeeksSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)71.312gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)6EAR99Tin (Sn)ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G61214W TcSingleENHANCEMENT MODE214WDRAIN17 nsN-ChannelSWITCHING2.4m Ω @ 80A, 10V3V @ 250μA7300pF @ 25V100A Tc109nC @ 10V8ns10V±20V17 ns71 ns219A1V20V0.0024Ohm40V864 mJ9.4mm10.8mm4.3mmNo SVHCNoROHS3 Compliant---------
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ACTIVE (Last Updated: 4 days ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.762gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)2EAR99Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21375W TcSingleENHANCEMENT MODE375WDRAIN230 nsN-ChannelSWITCHING3.1m Ω @ 75A, 10V4.5V @ 250μA15160pF @ 25V120A Tc220nC @ 10V191ns10V±20V121 ns335 ns235A-20V-75V-4.83mm10.67mm11.33mm-NoROHS3 Compliant3.1MOhm940ALead Free-----
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ACTIVE (Last Updated: 4 days ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.31247gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)2EAR99--FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21310W TcSingleENHANCEMENT MODE310WDRAIN15 nsN-ChannelSWITCHING3.5m Ω @ 80A, 10V4V @ 250μA6400pF @ 25V22A Ta 80A Tc124nC @ 10V93ns6V 10V±20V13 ns38 ns80A4V20V-60V625 mJ4.83mm10.67mm11.33mmNo SVHCNoROHS3 Compliant3.5MOhm-Lead FreeTin200260V80A22A
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ACTIVE (Last Updated: 4 days ago)8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.31247gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)2EAR99Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21160W TcSingleENHANCEMENT MODE160WDRAIN45 nsN-ChannelSWITCHING8.8m Ω @ 75A, 10V4V @ 250μA6595pF @ 25V120A Tc118nC @ 10V158ns10V±20V102 ns244 ns120A2V20V0.0088Ohm75V-4.83mm10.67mm11.33mmNo SVHCNoROHS3 Compliant----2004--85A
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