FDB024N04AL7

Fairchild/ON Semiconductor FDB024N04AL7

Part Number:
FDB024N04AL7
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2849294-FDB024N04AL7
Description:
MOSFET N-CH 40V D2PAK-7
ECAD Model:
Datasheet:
FDB024N04AL7

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDB024N04AL7 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB024N04AL7.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-7, D2Pak (6 Leads Tab)
  • Number of Pins
    7
  • Weight
    1.312g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • JESD-30 Code
    R-PSSO-G6
  • Number of Elements
    1
  • Power Dissipation-Max
    214W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    214W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.4m Ω @ 80A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    109nC @ 10V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    71 ns
  • Continuous Drain Current (ID)
    219A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0024Ohm
  • Drain to Source Breakdown Voltage
    40V
  • Avalanche Energy Rating (Eas)
    864 mJ
  • Height
    9.4mm
  • Length
    10.8mm
  • Width
    4.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDB024N04AL7 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 864 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 219A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 71 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

FDB024N04AL7 Features
the avalanche energy rating (Eas) is 864 mJ
a continuous drain current (ID) of 219A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 71 ns
a threshold voltage of 1V


FDB024N04AL7 Applications
There are a lot of ON Semiconductor
FDB024N04AL7 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDB024N04AL7 More Descriptions
Trans MOSFET N-CH 40V 219A 7-Pin(6 Tab) D2PAK T/R
N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ
Chip Resistor - Surface Mount 165kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 165K OHM 1% 1/10W 0402
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 40V, 100A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Product Comparison
The three parts on the right have similar specifications to FDB024N04AL7.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Resistance
    Pulsed Drain Current-Max (IDM)
    Lead Free
    Contact Plating
    Published
    Voltage - Rated DC
    Current Rating
    Drain Current-Max (Abs) (ID)
    View Compare
  • FDB024N04AL7
    FDB024N04AL7
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab)
    7
    1.312g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G6
    1
    214W Tc
    Single
    ENHANCEMENT MODE
    214W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    2.4m Ω @ 80A, 10V
    3V @ 250μA
    7300pF @ 25V
    100A Tc
    109nC @ 10V
    8ns
    10V
    ±20V
    17 ns
    71 ns
    219A
    1V
    20V
    0.0024Ohm
    40V
    864 mJ
    9.4mm
    10.8mm
    4.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDB031N08
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.762g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    230 ns
    N-Channel
    SWITCHING
    3.1m Ω @ 75A, 10V
    4.5V @ 250μA
    15160pF @ 25V
    120A Tc
    220nC @ 10V
    191ns
    10V
    ±20V
    121 ns
    335 ns
    235A
    -
    20V
    -
    75V
    -
    4.83mm
    10.67mm
    11.33mm
    -
    No
    ROHS3 Compliant
    3.1MOhm
    940A
    Lead Free
    -
    -
    -
    -
    -
  • FDB035AN06A0
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    310W Tc
    Single
    ENHANCEMENT MODE
    310W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    3.5m Ω @ 80A, 10V
    4V @ 250μA
    6400pF @ 25V
    22A Ta 80A Tc
    124nC @ 10V
    93ns
    6V 10V
    ±20V
    13 ns
    38 ns
    80A
    4V
    20V
    -
    60V
    625 mJ
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    No
    ROHS3 Compliant
    3.5MOhm
    -
    Lead Free
    Tin
    2002
    60V
    80A
    22A
  • FDB088N08
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    DRAIN
    45 ns
    N-Channel
    SWITCHING
    8.8m Ω @ 75A, 10V
    4V @ 250μA
    6595pF @ 25V
    120A Tc
    118nC @ 10V
    158ns
    10V
    ±20V
    102 ns
    244 ns
    120A
    2V
    20V
    0.0088Ohm
    75V
    -
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    2004
    -
    -
    85A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.