Diodes Incorporated DMP6180SK3-13
- Part Number:
- DMP6180SK3-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3586096-DMP6180SK3-13
- Description:
- MOSFET P-CH 60V 14A TO252
- Datasheet:
- DMP6180SK3-13
Diodes Incorporated DMP6180SK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP6180SK3-13.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight3.949996g
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max1.7W Ta
- Element ConfigurationSingle
- Turn On Delay Time5.9 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs110m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id2.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds984.7pF @ 30V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs17.1nC @ 10V
- Rise Time21.2ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)39.1 ns
- Turn-Off Delay Time30.9 ns
- Continuous Drain Current (ID)14A
- Gate to Source Voltage (Vgs)20V
- Height2.39mm
- Length6.7mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP6180SK3-13 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 984.7pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 30.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMP6180SK3-13 Features
a continuous drain current (ID) of 14A
the turn-off delay time is 30.9 ns
a 60V drain to source voltage (Vdss)
DMP6180SK3-13 Applications
There are a lot of Diodes Incorporated
DMP6180SK3-13 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 984.7pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 30.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMP6180SK3-13 Features
a continuous drain current (ID) of 14A
the turn-off delay time is 30.9 ns
a 60V drain to source voltage (Vdss)
DMP6180SK3-13 Applications
There are a lot of Diodes Incorporated
DMP6180SK3-13 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMP6180SK3-13 More Descriptions
P-Channel 60 V 110 mO Surface Mount Enhancement Mode Mosfet -TO-252-3 (DPAK)
Mosfet, P-Ch, 60V, 14A, To-252/Dpak Rohs Compliant: Yes |Diodes Inc. DMP6180SK3-13
Trans MOSFET P-CH 60V 14A Automotive 3-Pin(2 Tab) TO-252 T/R
Mosfet, P-Ch, 60V, 14A, To-252/Dpak Rohs Compliant: Yes |Diodes Inc. DMP6180SK3-13
Trans MOSFET P-CH 60V 14A Automotive 3-Pin(2 Tab) TO-252 T/R
The three parts on the right have similar specifications to DMP6180SK3-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsAdditional FeatureCapacitanceTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsOperating ModeTransistor ApplicationDrain to Source Breakdown VoltageSeriesJESD-30 CodeConfigurationDrain-source On Resistance-MaxDS Breakdown Voltage-MinSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceRds On MaxView Compare
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DMP6180SK3-1317 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996g-55°C~150°C TJCut Tape (CT)2013e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)11.7W TaSingle5.9 nsP-Channel110m Ω @ 12A, 10V2.7V @ 250μA984.7pF @ 30V14A Tc17.1nC @ 10V21.2ns60V4.5V 10V±20V39.1 ns30.9 ns14A20V2.39mm6.7mm6.2mmNo SVHCNoROHS3 CompliantLead Free-----------------------
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23 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mg-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)11.5W TaSingle3.7 nsP-Channel110m Ω @ 4.5A, 10V3V @ 250μA1030pF @ 30V-19.4nC @ 10V6.3ns60V4.5V 10V±20V26.1 ns58.7 ns-4.5A20V-----ROHS3 CompliantLead FreeSILICON8HIGH RELIABILITY1.03nFDUALGULL WING260301ENHANCEMENT MODESWITCHING-60V----------
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2016e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)-720mW Ta--P-Channel350m Ω @ 900mA, 10V3V @ 250μA206pF @ 30V1.5A Ta4.1nC @ 10V-60V4.5V 10V±20V--1.5A------ROHS3 Compliant-SILICON3HIGH RELIABILITY-DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED1ENHANCEMENT MODESWITCHING-Automotive, AEC-Q101R-PDSO-G3SINGLE WITH BUILT-IN DIODE0.35Ohm60V-----
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20 WeeksSurface MountSurface MountTO-261-4, TO-261AA---55°C~150°C TJTape & Reel (TR)2014-Active1 (Unlimited)--MOSFET (Metal Oxide)-1.2W Ta--P-Channel150mOhm @ 2.2A, 10V3V @ 250μA708pF @ 30V3A Ta14nC @ 10V-60V4.5V 10V±20V--3A------RoHS Compliant-------------Automotive, AEC-Q101----SOT-223150°C-55°C708pF150 mΩ
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