DMP6180SK3-13

Diodes Incorporated DMP6180SK3-13

Part Number:
DMP6180SK3-13
Manufacturer:
Diodes Incorporated
Ventron No:
3586096-DMP6180SK3-13
Description:
MOSFET P-CH 60V 14A TO252
ECAD Model:
Datasheet:
DMP6180SK3-13

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Specifications
Diodes Incorporated DMP6180SK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP6180SK3-13.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    3.949996g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    1.7W Ta
  • Element Configuration
    Single
  • Turn On Delay Time
    5.9 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    110m Ω @ 12A, 10V
  • Vgs(th) (Max) @ Id
    2.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    984.7pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17.1nC @ 10V
  • Rise Time
    21.2ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    39.1 ns
  • Turn-Off Delay Time
    30.9 ns
  • Continuous Drain Current (ID)
    14A
  • Gate to Source Voltage (Vgs)
    20V
  • Height
    2.39mm
  • Length
    6.7mm
  • Width
    6.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMP6180SK3-13 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 984.7pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 30.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

DMP6180SK3-13 Features
a continuous drain current (ID) of 14A
the turn-off delay time is 30.9 ns
a 60V drain to source voltage (Vdss)


DMP6180SK3-13 Applications
There are a lot of Diodes Incorporated
DMP6180SK3-13 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMP6180SK3-13 More Descriptions
P-Channel 60 V 110 mO Surface Mount Enhancement Mode Mosfet -TO-252-3 (DPAK)
Mosfet, P-Ch, 60V, 14A, To-252/Dpak Rohs Compliant: Yes |Diodes Inc. DMP6180SK3-13
Trans MOSFET P-CH 60V 14A Automotive 3-Pin(2 Tab) TO-252 T/R
Product Comparison
The three parts on the right have similar specifications to DMP6180SK3-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Capacitance
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Operating Mode
    Transistor Application
    Drain to Source Breakdown Voltage
    Series
    JESD-30 Code
    Configuration
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Rds On Max
    View Compare
  • DMP6180SK3-13
    DMP6180SK3-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    3.949996g
    -55°C~150°C TJ
    Cut Tape (CT)
    2013
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    1
    1.7W Ta
    Single
    5.9 ns
    P-Channel
    110m Ω @ 12A, 10V
    2.7V @ 250μA
    984.7pF @ 30V
    14A Tc
    17.1nC @ 10V
    21.2ns
    60V
    4.5V 10V
    ±20V
    39.1 ns
    30.9 ns
    14A
    20V
    2.39mm
    6.7mm
    6.2mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP6110SSS-13
    23 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    1
    1.5W Ta
    Single
    3.7 ns
    P-Channel
    110m Ω @ 4.5A, 10V
    3V @ 250μA
    1030pF @ 30V
    -
    19.4nC @ 10V
    6.3ns
    60V
    4.5V 10V
    ±20V
    26.1 ns
    58.7 ns
    -4.5A
    20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    SILICON
    8
    HIGH RELIABILITY
    1.03nF
    DUAL
    GULL WING
    260
    30
    1
    ENHANCEMENT MODE
    SWITCHING
    -60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP6350S-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    -
    720mW Ta
    -
    -
    P-Channel
    350m Ω @ 900mA, 10V
    3V @ 250μA
    206pF @ 30V
    1.5A Ta
    4.1nC @ 10V
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    1.5A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    3
    HIGH RELIABILITY
    -
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    1
    ENHANCEMENT MODE
    SWITCHING
    -
    Automotive, AEC-Q101
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    0.35Ohm
    60V
    -
    -
    -
    -
    -
  • DMP6185SE-7
    20 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    1.2W Ta
    -
    -
    P-Channel
    150mOhm @ 2.2A, 10V
    3V @ 250μA
    708pF @ 30V
    3A Ta
    14nC @ 10V
    -
    60V
    4.5V 10V
    ±20V
    -
    -
    3A
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
    -
    -
    -
    -
    SOT-223
    150°C
    -55°C
    708pF
    150 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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