Diodes Incorporated DMP6023LFG-7
- Part Number:
- DMP6023LFG-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3813589-DMP6023LFG-7
- Description:
- MOSFET P-CH 60V 7.7A POWERDI3333
- Datasheet:
- DMP6023LFG-7
Diodes Incorporated DMP6023LFG-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP6023LFG-7.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Weight72.007789mg
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierPOWERDI3333-8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- Capacitance2.569nF
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1W
- Case ConnectionDRAIN
- Turn On Delay Time6 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2569pF @ 30V
- Current - Continuous Drain (Id) @ 25°C7.7A Ta
- Gate Charge (Qg) (Max) @ Vgs53.1nC @ 10V
- Rise Time7.1ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)62 ns
- Turn-Off Delay Time110 ns
- Continuous Drain Current (ID)-7.7A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.025Ohm
- Drain to Source Breakdown Voltage-60V
- Max Junction Temperature (Tj)150°C
- Height850μm
- Length3.3mm
- Width3.3mm
- RoHS StatusROHS3 Compliant
DMP6023LFG-7 Overview
A device's maximal input capacitance is 2569pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -7.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
DMP6023LFG-7 Features
a continuous drain current (ID) of -7.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 110 ns
a 60V drain to source voltage (Vdss)
DMP6023LFG-7 Applications
There are a lot of Diodes Incorporated
DMP6023LFG-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 2569pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -7.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
DMP6023LFG-7 Features
a continuous drain current (ID) of -7.7A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 110 ns
a 60V drain to source voltage (Vdss)
DMP6023LFG-7 Applications
There are a lot of Diodes Incorporated
DMP6023LFG-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMP6023LFG-7 More Descriptions
MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF
Trans MOSFET P-CH 60V 7.7A 8-Pin PowerDI EP T/R
POWER INTEGRATIONS - TOP224YN - PWM SWITCH, TO220-3, 224
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGSDiodes Inc SCT
MOSFET, P-CH, -60V, -7.7A, POWERDI3333; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.7A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 2.1W; Transistor Case Style: PowerDI 3333; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 7.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-CH 60V 7.7A PWRDI3333-8
Trans MOSFET P-CH 60V 7.7A 8-Pin PowerDI EP T/R
POWER INTEGRATIONS - TOP224YN - PWM SWITCH, TO220-3, 224
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGSDiodes Inc SCT
MOSFET, P-CH, -60V, -7.7A, POWERDI3333; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.7A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 2.1W; Transistor Case Style: PowerDI 3333; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Small Signal Field-Effect Transistor, 7.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-CH 60V 7.7A PWRDI3333-8
The three parts on the right have similar specifications to DMP6023LFG-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureCapacitanceTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthRoHS StatusSeriesConfigurationDS Breakdown Voltage-MinPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceRds On MaxView Compare
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DMP6023LFG-723 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICONPOWERDI3333-8-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)5EAR99Matte Tin (Sn)HIGH RELIABILITY2.569nFMOSFET (Metal Oxide)DUALNO LEAD26030S-PDSO-N5111W TaSingleENHANCEMENT MODE1WDRAIN6 nsP-ChannelSWITCHING25m Ω @ 5A, 10V3V @ 250μA2569pF @ 30V7.7A Ta53.1nC @ 10V7.1ns60V4.5V 10V±20V62 ns110 ns-7.7A20V0.025Ohm-60V150°C850μm3.3mm3.3mmROHS3 Compliant-----------
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON--55°C~150°C TJTape & Reel (TR)2016e3Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31-720mW Ta-ENHANCEMENT MODE---P-ChannelSWITCHING350m Ω @ 900mA, 10V3V @ 250μA206pF @ 30V1.5A Ta4.1nC @ 10V-60V4.5V 10V±20V--1.5A-0.35Ohm-----ROHS3 CompliantAutomotive, AEC-Q101SINGLE WITH BUILT-IN DIODE60V-------
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23 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)--SILICON--55°C~150°C TJTape & Reel (TR)-e3Active1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G81-1.5W Ta-ENHANCEMENT MODE---P-ChannelSWITCHING110m Ω @ 4.5A, 10V3V @ 250μA1030pF @ 30V-19.4nC @ 10V-60V4.5V 10V±20V----0.11Ohm-----ROHS3 CompliantAutomotive, AEC-Q101SINGLE WITH BUILT-IN DIODE60V19A15.4 mJ-----
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20 WeeksSurface MountSurface MountTO-261-4, TO-261AA-----55°C~150°C TJTape & Reel (TR)2014-Active1 (Unlimited)-----MOSFET (Metal Oxide)-------1.2W Ta-----P-Channel-150mOhm @ 2.2A, 10V3V @ 250μA708pF @ 30V3A Ta14nC @ 10V-60V4.5V 10V±20V--3A-------RoHS CompliantAutomotive, AEC-Q101----SOT-223150°C-55°C708pF150 mΩ
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