Diodes Incorporated DMN1019UFDE-7

Name: DMN1019UFDE-7
Brand: Diodes Incorporated
SKU: 2479759-DMN1019UFDE-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN1019UFDE-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2479759-DMN1019UFDE-7

Description:: MOSFET N CH 12V 11A U-DFN2020-6E

ECAD Model:

Datasheet:: DMN1019UFDE-7

Specifications

Diodes Incorporated DMN1019UFDE-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN1019UFDE-7.

Factory Lead Time
14 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
JESD-30 Code
R-PDSO-N3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
690mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
7.6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 9.7A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2425pF @ 10V
Current - Continuous Drain (Id) @ 25°C
11A Ta
Gate Charge (Qg) (Max) @ Vgs
50.6nC @ 8V
Rise Time
22.2ns
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.2V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
16.8 ns
Turn-Off Delay Time
57.6 ns
Continuous Drain Current (ID)
11A
Gate to Source Voltage (Vgs)
8V
Height
580μm
Length
2.05mm
Width
2.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN1019UFDE-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2425pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 57.6 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 12V.Using drive voltage (1.2V 4.5V) reduces this device's overall power consumption.

DMN1019UFDE-7 Features
a continuous drain current (ID) of 11A
the turn-off delay time is 57.6 ns
a 12V drain to source voltage (Vdss)

DMN1019UFDE-7 Applications
There are a lot of Diodes Incorporated
DMN1019UFDE-7 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

DMN1019UFDE-7 More Descriptions

MOSFET N CH 12V 11A U-DFN2020-6E / Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R
N-Channel 12 V 10 mOhm Enhancement Mode Mosfet - U-DFN2020-6
MOSFET Operating temperature: -55...150 °C Housing type: UDFN2020-6 Polarity: N Variants: Enhancement mode Power dissipation: 0.69 W

Product Comparison

The three parts on the right have similar specifications to DMN1019UFDE-7.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Weight

Termination

Resistance

Voltage - Rated DC

Terminal Form

Current Rating

Pin Count

Power Dissipation

Threshold Voltage

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

View Compare
DMN1019UFDE-7

Diodes Incorporated

14 Weeks

Gold

Surface Mount

Surface Mount

6-UDFN Exposed Pad

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2017

e4

yes

Active

1 (Unlimited)

3

EAR99

HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

260

40

R-PDSO-N3

1

1

690mW Ta

Single

ENHANCEMENT MODE

DRAIN

7.6 ns

N-Channel

SWITCHING

10m Ω @ 9.7A, 4.5V

800mV @ 250μA

2425pF @ 10V

11A Ta

50.6nC @ 8V

22.2ns

12V

1.2V 4.5V

±8V

16.8 ns

57.6 ns

11A

8V

580μm

2.05mm

2.05mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN10H170SVTQ-13

Diodes Incorporated

23 Weeks

-

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

yes

Active

1 (Unlimited)

-

EAR99

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

1.2W Ta

-

-

-

-

N-Channel

-

160m Ω @ 5A, 10V

3V @ 250μA

1167pF @ 25V

2.6A Ta

9.7nC @ 10V

-

100V

4.5V 10V

±20V

-

-

2.6A

-

-

-

-

-

-

ROHS3 Compliant

-

Matte Tin (Sn)

-

-

-

-

-

-

-

-

-

-

-

-

DMN1019UFDE-7 vs DMN10H170SVTQ-13
DMN100-7-F

Diodes Incorporated

19 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

260

40

-

1

1

500mW Ta

Single

ENHANCEMENT MODE

-

10 ns

N-Channel

SWITCHING

240m Ω @ 1A, 10V

3V @ 1mA

150pF @ 10V

1.1A Ta

5.5nC @ 10V

15ns

-

4.5V 10V

±20V

15 ns

25 ns

1.1A

20V

1.3mm

3.1mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

Matte Tin (Sn)

7.994566mg

SMD/SMT

240MOhm

30V

GULL WING

1.1A

3

500mW

3V

30V

30V

3 V

DMN1019UFDE-7 vs DMN100-7-F
DMN1054UCB4-7

Diodes Incorporated

17 Weeks

-

Surface Mount

Surface Mount

4-XFBGA, WLBGA

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

e1

yes

Active

1 (Unlimited)

-

EAR99

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

740mW Ta

-

-

-

-

N-Channel

-

42m Ω @ 1A, 4.5V

700mV @ 250μA

908pF @ 6V

2.7A Ta

15nC @ 4.5V

-

8V

1.2V 4.5V

±5V

-

-

2.7A

-

-

-

-

-

-

ROHS3 Compliant

-

Tin/Silver/Copper (Sn/Ag/Cu)

-

-

-

-

-

-

-

-

-

-

-

-

DMN1019UFDE-7 vs DMN1054UCB4-7