Diodes Incorporated DMN100-7-F
- Part Number:
- DMN100-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070237-DMN100-7-F
- Description:
- MOSFET N-CH 30V 1.1A SC59-3
- Datasheet:
- DMN100-7-F
Diodes Incorporated DMN100-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN100-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance240MOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating1.1A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500mW
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs240m Ω @ 1A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 10V
- Current - Continuous Drain (Id) @ 25°C1.1A Ta
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 10V
- Rise Time15ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)1.1A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Nominal Vgs3 V
- Height1.3mm
- Length3.1mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN100-7-F Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 150pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMN100-7-F Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 3V
DMN100-7-F Applications
There are a lot of Diodes Incorporated
DMN100-7-F applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 150pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMN100-7-F Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 3V
DMN100-7-F Applications
There are a lot of Diodes Incorporated
DMN100-7-F applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMN100-7-F More Descriptions
DIODES INC. - DMN100-7-F - MOSFET Transistor, N Channel, 1.1 A, 30 V, 0.24 ohm, 10 V, 3 V
MOSFET, N CH, 30V, 1.1A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rd; Available until stocks are exhausted Alternative available
Mosfet, N Channel, 30V, 1.1A, Sc-59; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Diodes Inc. DMN100-7-F
MOSFET, N CH, 30V, 1.1A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rd; Available until stocks are exhausted Alternative available
Mosfet, N Channel, 30V, 1.1A, Sc-59; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Diodes Inc. DMN100-7-F
The three parts on the right have similar specifications to DMN100-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)CapacitanceJESD-30 CodeView Compare
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DMN100-7-F19 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)3SMD/SMTEAR99240MOhmMatte Tin (Sn)HIGH RELIABILITYFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING2601.1A40311500mW TaSingleENHANCEMENT MODE500mW10 nsN-ChannelSWITCHING240m Ω @ 1A, 10V3V @ 1mA150pF @ 10V1.1A Ta5.5nC @ 10V15ns4.5V 10V±20V15 ns25 ns1.1A3V20V30V30V3 V1.3mm3.1mm1.7mmNo SVHCNoROHS3 CompliantLead Free----
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17 WeeksSurface MountSurface Mount6-UDFN Exposed Pad----55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)--EAR99-Nickel/Palladium/Gold (Ni/Pd/Au)---MOSFET (Metal Oxide)--NOT SPECIFIED-NOT SPECIFIED---660mW Ta----N-Channel-160m Ω @ 5A, 10V3V @ 250μA1167pF @ 25V2.9A Ta9.7nC @ 10V-4.5V 10V±20V--2.9A----------ROHS3 Compliant-100V--
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23 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)--EAR99-Matte Tin (Sn)---MOSFET (Metal Oxide)--NOT SPECIFIED-NOT SPECIFIED---1.2W Ta----N-Channel-160m Ω @ 5A, 10V3V @ 250μA1167pF @ 25V2.6A Ta9.7nC @ 10V-4.5V 10V±20V--2.6A----------ROHS3 Compliant-100V--
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16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3-EAR99-Matte Tin (Sn)---MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED-NOT SPECIFIED-11680mW TaSingleENHANCEMENT MODE-7.6 nsN-ChannelSWITCHING10m Ω @ 9.7A, 4.5V800mV @ 250μA2426pF @ 10V9.3A Ta50.6nC @ 8V57.6ns1.2V 2.5V±8V16.8 ns22.2 ns9.3A-4.5V12V-------ROHS3 CompliantLead Free-2.426nFR-PDSO-G3
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