DMN100-7-F

Diodes Incorporated DMN100-7-F

Part Number:
DMN100-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
3070237-DMN100-7-F
Description:
MOSFET N-CH 30V 1.1A SC59-3
ECAD Model:
Datasheet:
DMN100-7-F

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Comments
Specifications
Diodes Incorporated DMN100-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN100-7-F.
  • Factory Lead Time
    19 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    240MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1.1A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    240m Ω @ 1A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    150pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.5nC @ 10V
  • Rise Time
    15ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    1.1A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Nominal Vgs
    3 V
  • Height
    1.3mm
  • Length
    3.1mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN100-7-F Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 150pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

DMN100-7-F Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
a threshold voltage of 3V


DMN100-7-F Applications
There are a lot of Diodes Incorporated
DMN100-7-F applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMN100-7-F More Descriptions
DIODES INC. - DMN100-7-F - MOSFET Transistor, N Channel, 1.1 A, 30 V, 0.24 ohm, 10 V, 3 V
MOSFET, N CH, 30V, 1.1A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rd; Available until stocks are exhausted Alternative available
Mosfet, N Channel, 30V, 1.1A, Sc-59; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Diodes Inc. DMN100-7-F
Product Comparison
The three parts on the right have similar specifications to DMN100-7-F.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Capacitance
    JESD-30 Code
    View Compare
  • DMN100-7-F
    DMN100-7-F
    19 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    240MOhm
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    1.1A
    40
    3
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    10 ns
    N-Channel
    SWITCHING
    240m Ω @ 1A, 10V
    3V @ 1mA
    150pF @ 10V
    1.1A Ta
    5.5nC @ 10V
    15ns
    4.5V 10V
    ±20V
    15 ns
    25 ns
    1.1A
    3V
    20V
    30V
    30V
    3 V
    1.3mm
    3.1mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • DMN10H170SFDE-13
    17 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    -
    Active
    1 (Unlimited)
    -
    -
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    -
    660mW Ta
    -
    -
    -
    -
    N-Channel
    -
    160m Ω @ 5A, 10V
    3V @ 250μA
    1167pF @ 25V
    2.9A Ta
    9.7nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    2.9A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    100V
    -
    -
  • DMN10H170SVTQ-13
    23 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    -
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    -
    1.2W Ta
    -
    -
    -
    -
    N-Channel
    -
    160m Ω @ 5A, 10V
    3V @ 250μA
    1167pF @ 25V
    2.6A Ta
    9.7nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    2.6A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    100V
    -
    -
  • DMN1019USN-7
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    -
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    1
    1
    680mW Ta
    Single
    ENHANCEMENT MODE
    -
    7.6 ns
    N-Channel
    SWITCHING
    10m Ω @ 9.7A, 4.5V
    800mV @ 250μA
    2426pF @ 10V
    9.3A Ta
    50.6nC @ 8V
    57.6ns
    1.2V 2.5V
    ±8V
    16.8 ns
    22.2 ns
    9.3A
    -
    4.5V
    12V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    2.426nF
    R-PDSO-G3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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