Diodes Incorporated DMN10H700S-7

Name: DMN10H700S-7
Brand: Diodes Incorporated
SKU: 3586297-DMN10H700S-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN10H700S-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3586297-DMN10H700S-7

Description:: MOSFET N-CHA 100V 700MA SOT23

ECAD Model:

Datasheet:: DMN10H700S-7

Specifications

Diodes Incorporated DMN10H700S-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN10H700S-7.

Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2016
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
400mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
235pF @ 50V
Current - Continuous Drain (Id) @ 25°C
700mA Ta
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
700mA
Drain Current-Max (Abs) (ID)
0.7A
Drain-source On Resistance-Max
0.7Ohm
DS Breakdown Voltage-Min
100V
RoHS Status
ROHS3 Compliant

Description

DMN10H700S-7 Overview
A device's maximum input capacitance is 235pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.

DMN10H700S-7 Features
a continuous drain current (ID) of 700mA
a 100V drain to source voltage (Vdss)

DMN10H700S-7 Applications
There are a lot of Diodes Incorporated
DMN10H700S-7 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

DMN10H700S-7 More Descriptions

DMN Series 100 V 700 mOhm 0.4 W SMT N-Channel Enhancement Mode Mosfet - SOT-23
Trans MOSFET N-CH 100V 0.7A 3-Pin SOT-23 T/R
MOSFET, N-CH, 100V, 0.7A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHSDiodes Inc SCT
MOSFET BVDSS: 61V~100V SOT23 T&R 3K
Small Signal Field-Effect Transistor, 0.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to DMN10H700S-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Weight

Capacitance

Number of Channels

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Pbfree Code

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
DMN10H700S-7

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2016

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE

400mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

700m Ω @ 1.5A, 10V

4V @ 250μA

235pF @ 50V

700mA Ta

4.6nC @ 10V

100V

6V 10V

±20V

700mA

0.7A

0.7Ohm

100V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN1019USN-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2014

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G3

1

-

680mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

10m Ω @ 9.7A, 4.5V

800mV @ 250μA

2426pF @ 10V

9.3A Ta

50.6nC @ 8V

-

1.2V 2.5V

±8V

9.3A

-

-

-

ROHS3 Compliant

7.994566mg

2.426nF

1

Single

7.6 ns

57.6ns

16.8 ns

22.2 ns

4.5V

12V

Lead Free

-

-

-

DMN10H700S-7 vs DMN1019USN-7
DMN1054UCB4-7

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

4-XFBGA, WLBGA

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

e1

Active

1 (Unlimited)

-

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

740mW Ta

-

N-Channel

-

42m Ω @ 1A, 4.5V

700mV @ 250μA

908pF @ 6V

2.7A Ta

15nC @ 4.5V

8V

1.2V 4.5V

±5V

2.7A

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

yes

-

-

DMN10H700S-7 vs DMN1054UCB4-7
DMN1019UVT-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2015

e3

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G6

1

SINGLE WITH BUILT-IN DIODE

1.73W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

10m Ω @ 9.7A, 4.5V

800mV @ 250μA

2588pF @ 10V

10.7A Ta

50.4nC @ 8V

12V

1.2V 4.5V

±8V

10.7A

-

0.01Ohm

12V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

70A

4.7 mJ

DMN10H700S-7 vs DMN1019UVT-13