Diodes Incorporated DMG2301U-7
- Part Number:
- DMG2301U-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2849501-DMG2301U-7
- Description:
- MOSFET P-CH 20V 2.5A SOT23
- Datasheet:
- DMG2301U
Diodes Incorporated DMG2301U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG2301U-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max800mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation800mW
- Turn On Delay Time12.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs130m Ω @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds608pF @ 6V
- Current - Continuous Drain (Id) @ 25°C2.5A Ta
- Gate Charge (Qg) (Max) @ Vgs6.5nC @ 4.5V
- Rise Time10.3ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)22.2 ns
- Turn-Off Delay Time46.5 ns
- Continuous Drain Current (ID)2.7A
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)2.5A
- DS Breakdown Voltage-Min20V
- Height1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG2301U-7 Overview
A device's maximum input capacitance is 608pF @ 6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 2.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 46.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
DMG2301U-7 Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 46.5 ns
a 20V drain to source voltage (Vdss)
DMG2301U-7 Applications
There are a lot of Diodes Incorporated
DMG2301U-7 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 608pF @ 6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 2.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 46.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
DMG2301U-7 Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 46.5 ns
a 20V drain to source voltage (Vdss)
DMG2301U-7 Applications
There are a lot of Diodes Incorporated
DMG2301U-7 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMG2301U-7 More Descriptions
P-Channel 20 V 80 mO Surface Mount Enhancement Mode Mosfet - SOT-23
Trans MOSFET P-CH 20V 2.7A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 2.7A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMG2301U-7
Trans MOSFET P-CH 20V 2.7A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 2.7A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMG2301U-7
The three parts on the right have similar specifications to DMG2301U-7.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeSeriesJESD-30 CodeConfigurationDrain-source On Resistance-MaxView Compare
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DMG2301U-7Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJDigi-Reel®2013e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26040311800mW TaSingleENHANCEMENT MODE800mW12.5 nsP-ChannelSWITCHING130m Ω @ 2.8A, 4.5V1V @ 250μA608pF @ 6V2.5A Ta6.5nC @ 4.5V10.3ns20V2.5V 4.5V±8V22.2 ns46.5 ns2.7A8V2.5A20V1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free------
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Surface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---1.5W Ta----P-Channel-120m Ω @ 2.8A, 4.5V1.2V @ 250μA476pF @ 10V3A Ta5.5nC @ 4.5V-20V2.5V 4.5V±8V--3A--------ROHS3 Compliant-17 Weeks----
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---1.4W Ta----P-Channel-52m Ω @ 4.2A, 4.5V900mV @ 250μA808pF @ 15V4.2A Ta10.2nC @ 4.5V-20V1.8V 4.5V±8V--4.2A--------ROHS3 Compliant-23 Weeks----
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2007e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED-1-840mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING160m Ω @ 1A, 4.5V1V @ 250μA156pF @ 6V2.4A Ta3.4nC @ 10V-20V1.8V 4.5V±12V--2.4A--20V-----ROHS3 Compliant-17 WeeksAutomotive, AEC-Q101R-PDSO-G3SINGLE WITH BUILT-IN DIODE0.21Ohm
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