DMG2301U-7

Diodes Incorporated DMG2301U-7

Part Number:
DMG2301U-7
Manufacturer:
Diodes Incorporated
Ventron No:
2849501-DMG2301U-7
Description:
MOSFET P-CH 20V 2.5A SOT23
ECAD Model:
Datasheet:
DMG2301U

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Specifications
Diodes Incorporated DMG2301U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG2301U-7.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Digi-Reel®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    800mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    800mW
  • Turn On Delay Time
    12.5 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    130m Ω @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    608pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    6.5nC @ 4.5V
  • Rise Time
    10.3ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    22.2 ns
  • Turn-Off Delay Time
    46.5 ns
  • Continuous Drain Current (ID)
    2.7A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    2.5A
  • DS Breakdown Voltage-Min
    20V
  • Height
    1mm
  • Length
    3mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG2301U-7 Overview
A device's maximum input capacitance is 608pF @ 6V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 2.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 46.5 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.

DMG2301U-7 Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 46.5 ns
a 20V drain to source voltage (Vdss)


DMG2301U-7 Applications
There are a lot of Diodes Incorporated
DMG2301U-7 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMG2301U-7 More Descriptions
P-Channel 20 V 80 mO Surface Mount Enhancement Mode Mosfet - SOT-23
Trans MOSFET P-CH 20V 2.7A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 2.7A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMG2301U-7
Product Comparison
The three parts on the right have similar specifications to DMG2301U-7.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Factory Lead Time
    Series
    JESD-30 Code
    Configuration
    Drain-source On Resistance-Max
    View Compare
  • DMG2301U-7
    DMG2301U-7
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    800mW Ta
    Single
    ENHANCEMENT MODE
    800mW
    12.5 ns
    P-Channel
    SWITCHING
    130m Ω @ 2.8A, 4.5V
    1V @ 250μA
    608pF @ 6V
    2.5A Ta
    6.5nC @ 4.5V
    10.3ns
    20V
    2.5V 4.5V
    ±8V
    22.2 ns
    46.5 ns
    2.7A
    8V
    2.5A
    20V
    1mm
    3mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • DMG2301L-13
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    1.5W Ta
    -
    -
    -
    -
    P-Channel
    -
    120m Ω @ 2.8A, 4.5V
    1.2V @ 250μA
    476pF @ 10V
    3A Ta
    5.5nC @ 4.5V
    -
    20V
    2.5V 4.5V
    ±8V
    -
    -
    3A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    17 Weeks
    -
    -
    -
    -
  • DMG2305UXQ-7
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    1.4W Ta
    -
    -
    -
    -
    P-Channel
    -
    52m Ω @ 4.2A, 4.5V
    900mV @ 250μA
    808pF @ 15V
    4.2A Ta
    10.2nC @ 4.5V
    -
    20V
    1.8V 4.5V
    ±8V
    -
    -
    4.2A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    23 Weeks
    -
    -
    -
    -
  • DMG2301LK-7
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1
    -
    840mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    160m Ω @ 1A, 4.5V
    1V @ 250μA
    156pF @ 6V
    2.4A Ta
    3.4nC @ 10V
    -
    20V
    1.8V 4.5V
    ±12V
    -
    -
    2.4A
    -
    -
    20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    17 Weeks
    Automotive, AEC-Q101
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    0.21Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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