Diodes Incorporated DMG2305UX-7
- Part Number:
- DMG2305UX-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3069961-DMG2305UX-7
- Description:
- MOSFET P-CH 20V 4.2A SOT23
- Datasheet:
- DMG2305UX-7
Diodes Incorporated DMG2305UX-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG2305UX-7.
- Factory Lead Time23 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance52MOhm
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time10.8 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs52m Ω @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds808pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4.2A Ta
- Gate Charge (Qg) (Max) @ Vgs10.2nC @ 4.5V
- Rise Time13.7ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)34.7 ns
- Turn-Off Delay Time79.3 ns
- Continuous Drain Current (ID)4.2A
- Threshold Voltage-900mV
- Gate to Source Voltage (Vgs)8V
- DS Breakdown Voltage-Min20V
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG2305UX-7 Overview
A device's maximal input capacitance is 808pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.2A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 79.3 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -900mV threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMG2305UX-7 Features
a continuous drain current (ID) of 4.2A
the turn-off delay time is 79.3 ns
a threshold voltage of -900mV
a 20V drain to source voltage (Vdss)
DMG2305UX-7 Applications
There are a lot of Diodes Incorporated
DMG2305UX-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 808pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.2A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 79.3 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -900mV threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMG2305UX-7 Features
a continuous drain current (ID) of 4.2A
the turn-off delay time is 79.3 ns
a threshold voltage of -900mV
a 20V drain to source voltage (Vdss)
DMG2305UX-7 Applications
There are a lot of Diodes Incorporated
DMG2305UX-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMG2305UX-7 More Descriptions
P-Channel 20 V 52 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG2305UX-7
MOSFET P-Ch 20V 5A Enhancement SOT23 | Diodes Inc DMG2305UX-7
Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Source Voltage Vds:-20V; On Resistance
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG2305UX-7
MOSFET P-Ch 20V 5A Enhancement SOT23 | Diodes Inc DMG2305UX-7
Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Source Voltage Vds:-20V; On Resistance
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMG2305UX-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)SeriesJESD-30 CodeConfigurationDrain-source On Resistance-MaxPbfree CodePower DissipationDrain Current-Max (Abs) (ID)View Compare
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DMG2305UX-723 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2013e3Active1 (Unlimited)3EAR9952MOhmHIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING3111.4W TaSingleENHANCEMENT MODE10.8 nsP-ChannelSWITCHING52m Ω @ 4.2A, 4.5V900mV @ 250μA808pF @ 15V4.2A Ta10.2nC @ 4.5V13.7ns20V1.8V 4.5V±8V34.7 ns79.3 ns4.2A-900mV8V20V1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------
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23 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)-----1.4W Ta---P-Channel-52m Ω @ 4.2A, 4.5V900mV @ 250μA808pF @ 15V4.2A Ta10.2nC @ 4.5V-20V1.8V 4.5V±8V--4.2A--------ROHS3 Compliant-Matte Tin (Sn)NOT SPECIFIEDNOT SPECIFIED-------
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17 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)3EAR99-HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WING-1-840mW Ta-ENHANCEMENT MODE-P-ChannelSWITCHING160m Ω @ 1A, 4.5V1V @ 250μA156pF @ 6V2.4A Ta3.4nC @ 10V-20V1.8V 4.5V±12V--2.4A--20V-----ROHS3 Compliant-Matte Tin (Sn)NOT SPECIFIEDNOT SPECIFIEDAutomotive, AEC-Q101R-PDSO-G3SINGLE WITH BUILT-IN DIODE0.21Ohm---
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJDigi-Reel®2013e3Obsolete1 (Unlimited)3EAR99-HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING311800mW TaSingleENHANCEMENT MODE12.5 nsP-ChannelSWITCHING130m Ω @ 2.8A, 4.5V1V @ 250μA608pF @ 6V2.5A Ta6.5nC @ 4.5V10.3ns20V2.5V 4.5V±8V22.2 ns46.5 ns2.7A-8V20V1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)26040----yes800mW2.5A
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