DMG2305UX-7

Diodes Incorporated DMG2305UX-7

Part Number:
DMG2305UX-7
Manufacturer:
Diodes Incorporated
Ventron No:
3069961-DMG2305UX-7
Description:
MOSFET P-CH 20V 4.2A SOT23
ECAD Model:
Datasheet:
DMG2305UX-7

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Specifications
Diodes Incorporated DMG2305UX-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG2305UX-7.
  • Factory Lead Time
    23 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    52MOhm
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.4W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    10.8 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    52m Ω @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    808pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    4.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    10.2nC @ 4.5V
  • Rise Time
    13.7ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    34.7 ns
  • Turn-Off Delay Time
    79.3 ns
  • Continuous Drain Current (ID)
    4.2A
  • Threshold Voltage
    -900mV
  • Gate to Source Voltage (Vgs)
    8V
  • DS Breakdown Voltage-Min
    20V
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG2305UX-7 Overview
A device's maximal input capacitance is 808pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.2A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 79.3 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -900mV threshold voltage.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

DMG2305UX-7 Features
a continuous drain current (ID) of 4.2A
the turn-off delay time is 79.3 ns
a threshold voltage of -900mV
a 20V drain to source voltage (Vdss)


DMG2305UX-7 Applications
There are a lot of Diodes Incorporated
DMG2305UX-7 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMG2305UX-7 More Descriptions
P-Channel 20 V 52 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG2305UX-7
MOSFET P-Ch 20V 5A Enhancement SOT23 | Diodes Inc DMG2305UX-7
Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.2A; Source Voltage Vds:-20V; On Resistance
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -900mV; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to DMG2305UX-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Series
    JESD-30 Code
    Configuration
    Drain-source On Resistance-Max
    Pbfree Code
    Power Dissipation
    Drain Current-Max (Abs) (ID)
    View Compare
  • DMG2305UX-7
    DMG2305UX-7
    23 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2013
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    52MOhm
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    1
    1.4W Ta
    Single
    ENHANCEMENT MODE
    10.8 ns
    P-Channel
    SWITCHING
    52m Ω @ 4.2A, 4.5V
    900mV @ 250μA
    808pF @ 15V
    4.2A Ta
    10.2nC @ 4.5V
    13.7ns
    20V
    1.8V 4.5V
    ±8V
    34.7 ns
    79.3 ns
    4.2A
    -900mV
    8V
    20V
    1.1mm
    3mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG2305UXQ-7
    23 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1.4W Ta
    -
    -
    -
    P-Channel
    -
    52m Ω @ 4.2A, 4.5V
    900mV @ 250μA
    808pF @ 15V
    4.2A Ta
    10.2nC @ 4.5V
    -
    20V
    1.8V 4.5V
    ±8V
    -
    -
    4.2A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
  • DMG2301LK-7
    17 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    840mW Ta
    -
    ENHANCEMENT MODE
    -
    P-Channel
    SWITCHING
    160m Ω @ 1A, 4.5V
    1V @ 250μA
    156pF @ 6V
    2.4A Ta
    3.4nC @ 10V
    -
    20V
    1.8V 4.5V
    ±12V
    -
    -
    2.4A
    -
    -
    20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    NOT SPECIFIED
    NOT SPECIFIED
    Automotive, AEC-Q101
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    0.21Ohm
    -
    -
    -
  • DMG2301U-7
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2013
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    1
    800mW Ta
    Single
    ENHANCEMENT MODE
    12.5 ns
    P-Channel
    SWITCHING
    130m Ω @ 2.8A, 4.5V
    1V @ 250μA
    608pF @ 6V
    2.5A Ta
    6.5nC @ 4.5V
    10.3ns
    20V
    2.5V 4.5V
    ±8V
    22.2 ns
    46.5 ns
    2.7A
    -
    8V
    20V
    1mm
    3mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    260
    40
    -
    -
    -
    -
    yes
    800mW
    2.5A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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