Fairchild/ON Semiconductor BS270

Name: BS270
Brand: Fairchild/ON Semiconductor
SKU: 2478851-BS270
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BS270

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478851-BS270

Description:: MOSFET N-CH 60V 400MA TO-92

ECAD Model:

Datasheet:: BS270

Specifications

Fairchild/ON Semiconductor BS270 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BS270.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
11 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
200mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
1998
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
2MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Current Rating
400mA
Base Part Number
BS270
Number of Elements
1
Power Dissipation-Max
625mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
630mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
400mA Ta
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
400mA
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.4A
Drain to Source Breakdown Voltage
60V
Nominal Vgs
2.1 V
Feedback Cap-Max (Crss)
5 pF
Height
4.7mm
Length
4.7mm
Width
3.93mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BS270 Description BS270 transistor is an NPN transistor that operates by the current. BS270 NPN transistor features a slower switching speed, while the input impedance is lower and they consume a lot of power. On Semiconductor BS270 is widely used in television, broadcasting communications radar, computers electronic devices that control automatic devices as well as household appliances and other fields. BS270 Features Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space Pb-Free Package is Available Automotive and Other Applications AEC-Q101 Qualified and PPAP Capable BS270 Applications Television Broadcasting communications Radar Computers

BS270 More Descriptions

N-Channel MOSFET, Enhancement Mode, 60V, 400mA, 2Ω
N-Channel 60 V 2 Ohm Enhancement Mode Field Effect Transistor-TO-92-3
MOSFET Transistor, N Channel, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
Trans MOSFET N-CH 60V 0.4A 3-Pin TO-92 Bulk
Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:400mA; On Resistance, Rds(on):1.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes
MOSFET, N, TO-92; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:0.4A; Resistance, Rds On:2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.1V; Case Style:TO-92; Termination Type:Through Hole; Current, Idm Pulse:2A; Device Marking:BS270; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:0.625W; Power, Pd:0.625W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 400mA, 60V. RDS(ON) = 2W@ VGS = 10V. High density cell design for extremely low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

Certification