APT54GA60BD30

Microsemi Corporation APT54GA60BD30

Part Number:
APT54GA60BD30
Manufacturer:
Microsemi Corporation
Ventron No:
2497353-APT54GA60BD30
Description:
IGBT 600V 96A 416W TO247
ECAD Model:
Datasheet:
APT54GA60BD30

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Specifications
Microsemi Corporation APT54GA60BD30 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT54GA60BD30.
  • Factory Lead Time
    33 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1999
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Pure Matte Tin (Sn)
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    416W
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    416W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    96A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    37 ns
  • Test Condition
    400V, 32A, 4.7 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 32A
  • Turn Off Time-Nom (toff)
    291 ns
  • IGBT Type
    PT
  • Gate Charge
    28nC
  • Current - Collector Pulsed (Icm)
    161A
  • Td (on/off) @ 25°C
    17ns/112ns
  • Switching Energy
    534μJ (on), 466μJ (off)
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
APT54GA60BD30 Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT54GA60BD30 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT54GA60BD30. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT54GA60BD30 More Descriptions
Trans IGBT Chip N-CH 600V 96A 416000mW 3-Pin(3 Tab) TO-247 Tube
IGBT PT MOS 8 Combi 600 V 54 A TO-247
Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD
Insulated Gate Bipolar Transistor - Power MOS 8
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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