Microsemi Corporation APT54GA60BD30
- Part Number:
- APT54GA60BD30
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2497353-APT54GA60BD30
- Description:
- IGBT 600V 96A 416W TO247
- Datasheet:
- APT54GA60BD30
Microsemi Corporation APT54GA60BD30 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT54GA60BD30.
- Factory Lead Time33 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1999
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishPure Matte Tin (Sn)
- Additional FeatureLOW CONDUCTION LOSS
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation416W
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max416W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current96A
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage600V
- Turn On Time37 ns
- Test Condition400V, 32A, 4.7 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 32A
- Turn Off Time-Nom (toff)291 ns
- IGBT TypePT
- Gate Charge28nC
- Current - Collector Pulsed (Icm)161A
- Td (on/off) @ 25°C17ns/112ns
- Switching Energy534μJ (on), 466μJ (off)
- Gate-Emitter Voltage-Max30V
- Gate-Emitter Thr Voltage-Max6V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
APT54GA60BD30 Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT54GA60BD30 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT54GA60BD30. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT54GA60BD30 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT54GA60BD30. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT54GA60BD30 More Descriptions
Trans IGBT Chip N-CH 600V 96A 416000mW 3-Pin(3 Tab) TO-247 Tube
IGBT PT MOS 8 Combi 600 V 54 A TO-247
Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD
Insulated Gate Bipolar Transistor - Power MOS 8
IGBT PT MOS 8 Combi 600 V 54 A TO-247
Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, TO-247AD
Insulated Gate Bipolar Transistor - Power MOS 8
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