APT50GT60BRDQ2G

Microsemi Corporation APT50GT60BRDQ2G

Part Number:
APT50GT60BRDQ2G
Manufacturer:
Microsemi Corporation
Ventron No:
2854552-APT50GT60BRDQ2G
Description:
IGBT 600V 110A 446W TO247
ECAD Model:
Datasheet:
APT50GT60BRDQ2G

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Specifications
Microsemi Corporation APT50GT60BRDQ2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT50GT60BRDQ2G.
  • Factory Lead Time
    25 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    Thunderbolt IGBT®
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    446W
  • Current Rating
    110A
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    110A
  • Reverse Recovery Time
    22 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2V
  • Turn On Time
    46 ns
  • Test Condition
    400V, 50A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 50A
  • Continuous Collector Current
    110A
  • Turn Off Time-Nom (toff)
    365 ns
  • IGBT Type
    NPT
  • Gate Charge
    240nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    14ns/240ns
  • Switching Energy
    995μJ (on), 1070μJ (off)
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Height
    5.31mm
  • Length
    21.46mm
  • Width
    16.26mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT50GT60BRDQ2G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT50GT60BRDQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT50GT60BRDQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT50GT60BRDQ2G More Descriptions
Trans IGBT Chip N-CH 600V 110A 446000mW 3-Pin(3 Tab) TO-247 Tube
IGBT 600V 110A 446W TO247
Insulated Gate Bipolar Transistor - NPT Standard Speed
POWER IGBT TRANSISTOR
new, original packaged
Contact for details
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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