Microsemi Corporation APT50GT60BRDQ2G
- Part Number:
- APT50GT60BRDQ2G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2854552-APT50GT60BRDQ2G
- Description:
- IGBT 600V 110A 446W TO247
- Datasheet:
- APT50GT60BRDQ2G
Microsemi Corporation APT50GT60BRDQ2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT50GT60BRDQ2G.
- Factory Lead Time25 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesThunderbolt IGBT®
- Published1999
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation446W
- Current Rating110A
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current110A
- Reverse Recovery Time22 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
- Turn On Time46 ns
- Test Condition400V, 50A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
- Continuous Collector Current110A
- Turn Off Time-Nom (toff)365 ns
- IGBT TypeNPT
- Gate Charge240nC
- Current - Collector Pulsed (Icm)150A
- Td (on/off) @ 25°C14ns/240ns
- Switching Energy995μJ (on), 1070μJ (off)
- Gate-Emitter Voltage-Max30V
- Gate-Emitter Thr Voltage-Max5V
- Height5.31mm
- Length21.46mm
- Width16.26mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
APT50GT60BRDQ2G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT50GT60BRDQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT50GT60BRDQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT50GT60BRDQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT50GT60BRDQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT50GT60BRDQ2G More Descriptions
Trans IGBT Chip N-CH 600V 110A 446000mW 3-Pin(3 Tab) TO-247 Tube
IGBT 600V 110A 446W TO247
Insulated Gate Bipolar Transistor - NPT Standard Speed
POWER IGBT TRANSISTOR
new, original packaged
Contact for details
IGBT 600V 110A 446W TO247
Insulated Gate Bipolar Transistor - NPT Standard Speed
POWER IGBT TRANSISTOR
new, original packaged
Contact for details
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