S72XS256RE0AHBJ10

Cypress Semiconductor Corp S72XS256RE0AHBJ10

Part Number:
S72XS256RE0AHBJ10
Manufacturer:
Cypress Semiconductor Corp
Ventron No:
7372674-S72XS256RE0AHBJ10
Description:
1.8V V XS-R Memory IC XS-R Series 8mm mm
ECAD Model:
Datasheet:
S72XS256RE0AHBJ10

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Specifications
Cypress Semiconductor Corp S72XS256RE0AHBJ10 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S72XS256RE0AHBJ10.
  • Factory Lead Time
    26 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    133-VFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -25°C~85°C TA
  • Packaging
    Tray
  • Series
    XS-R
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    133
  • HTS Code
    8542.32.00.71
  • Subcategory
    Other Memory ICs
  • Technology
    FLASH, DRAM
  • Voltage - Supply
    1.7V~1.95V
  • Terminal Position
    BOTTOM
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.5mm
  • JESD-30 Code
    S-PBGA-B133
  • Qualification Status
    Not Qualified
  • Supply Voltage-Max (Vsup)
    1.95V
  • Power Supplies
    1.8V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    256Mbit Flash 2565Mbit DDR DRAM
  • Memory Type
    Non-Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    108MHz
  • Memory Format
    FLASH, RAM
  • Memory Interface
    Parallel
  • Organization
    16MX16
  • Memory Width
    16
  • Memory Density
    268435456 bit
  • Length
    8mm
  • Height Seated (Max)
    1mm
  • Width
    8mm
  • RoHS Status
    ROHS3 Compliant
Description
S72XS256RE0AHBJ10 Overview
In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tray size. The case is embedded in 133-VFBGA. Memory size on the chip is 256Mbit Flash 2565Mbit DDR DRAM. This device uses takes advantage of the FLASH, RAM format. The device's extended operating temperature range of -25°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. The recommended mounting type for this device is Surface Mount. On the chip, there are 133 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 108MHz range. This memory chip requires only 1.8V of power. XS-R series memory devices play an important role in the applications they target. The Other Memory ICs component is usually regarded as a type of this component.

S72XS256RE0AHBJ10 Features
Package / Case: 133-VFBGA


S72XS256RE0AHBJ10 Applications
There are a lot of Cypress Semiconductor Corp
S72XS256RE0AHBJ10 Memory applications.


eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
S72XS256RE0AHBJ10 More Descriptions
IC FLASH RAM 256MBIT PAR 133FBGA
IC FLASH RAM 256MIT PARALLEL
NOR Flash Nor
Product Comparison
The three parts on the right have similar specifications to S72XS256RE0AHBJ10.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    HTS Code
    Subcategory
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    JESD-30 Code
    Qualification Status
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Memory Size
    Memory Type
    Operating Mode
    Clock Frequency
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Memory Density
    Length
    Height Seated (Max)
    Width
    RoHS Status
    ECCN Code
    View Compare
  • S72XS256RE0AHBJ10
    S72XS256RE0AHBJ10
    26 Weeks
    Surface Mount
    133-VFBGA
    YES
    -25°C~85°C TA
    Tray
    XS-R
    Active
    3 (168 Hours)
    133
    8542.32.00.71
    Other Memory ICs
    FLASH, DRAM
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.5mm
    S-PBGA-B133
    Not Qualified
    1.95V
    1.8V
    1.7V
    256Mbit Flash 2565Mbit DDR DRAM
    Non-Volatile
    SYNCHRONOUS
    108MHz
    FLASH, RAM
    Parallel
    16MX16
    16
    268435456 bit
    8mm
    1mm
    8mm
    ROHS3 Compliant
    -
    -
  • S72XS256RE0AHBJH0
    16 Weeks
    Surface Mount
    133-VFBGA
    YES
    -40°C~85°C TA
    Tray
    XS-R
    Active
    3 (168 Hours)
    133
    8542.32.00.51
    Other Memory ICs
    FLASH, DRAM
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.5mm
    S-PBGA-B133
    Not Qualified
    1.95V
    1.8V
    1.7V
    256Mbit Flash 2565Mbit DDR DRAM
    Non-Volatile
    SYNCHRONOUS
    108MHz
    FLASH, RAM
    Parallel
    16MX16
    16
    268435456 bit
    8mm
    1mm
    8mm
    ROHS3 Compliant
    3A991.B.1.A
  • S72XS256RE0AHBJ13
    26 Weeks
    Surface Mount
    133-VFBGA
    YES
    -25°C~85°C TA
    Tape & Reel (TR)
    XS-R
    Active
    3 (168 Hours)
    133
    8542.32.00.71
    Other Memory ICs
    FLASH, DRAM
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.5mm
    S-PBGA-B133
    Not Qualified
    1.95V
    1.8V
    1.7V
    256Mbit Flash 2565Mbit DDR DRAM
    Non-Volatile
    SYNCHRONOUS
    108MHz
    FLASH, RAM
    Parallel
    16MX16
    16
    268435456 bit
    8mm
    1mm
    8mm
    ROHS3 Compliant
    -
  • S72XS256RE0AHBJ20
    13 Weeks
    Surface Mount
    133-VFBGA
    YES
    -40°C~85°C TA
    Tray
    XS-R
    Active
    3 (168 Hours)
    133
    8542.32.00.71
    -
    FLASH, DRAM
    1.7V~1.95V
    BOTTOM
    1
    1.8V
    0.5mm
    S-PBGA-B133
    -
    1.95V
    -
    1.7V
    256Mbit Flash 2565Mbit DDR DRAM
    Non-Volatile
    SYNCHRONOUS
    108MHz
    FLASH, RAM
    Parallel
    16MX16
    16
    268435456 bit
    8mm
    1mm
    8mm
    ROHS3 Compliant
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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