Cypress Semiconductor Corp S72XS256RE0AHBJ10
- Part Number:
- S72XS256RE0AHBJ10
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7372674-S72XS256RE0AHBJ10
- Description:
- 1.8V V XS-R Memory IC XS-R Series 8mm mm
- Datasheet:
- S72XS256RE0AHBJ10
Cypress Semiconductor Corp S72XS256RE0AHBJ10 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S72XS256RE0AHBJ10.
- Factory Lead Time26 Weeks
- Mounting TypeSurface Mount
- Package / Case133-VFBGA
- Surface MountYES
- Operating Temperature-25°C~85°C TA
- PackagingTray
- SeriesXS-R
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations133
- HTS Code8542.32.00.71
- SubcategoryOther Memory ICs
- TechnologyFLASH, DRAM
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.5mm
- JESD-30 CodeS-PBGA-B133
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.95V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size256Mbit Flash 2565Mbit DDR DRAM
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency108MHz
- Memory FormatFLASH, RAM
- Memory InterfaceParallel
- Organization16MX16
- Memory Width16
- Memory Density268435456 bit
- Length8mm
- Height Seated (Max)1mm
- Width8mm
- RoHS StatusROHS3 Compliant
S72XS256RE0AHBJ10 Overview
In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tray size. The case is embedded in 133-VFBGA. Memory size on the chip is 256Mbit Flash 2565Mbit DDR DRAM. This device uses takes advantage of the FLASH, RAM format. The device's extended operating temperature range of -25°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. The recommended mounting type for this device is Surface Mount. On the chip, there are 133 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 108MHz range. This memory chip requires only 1.8V of power. XS-R series memory devices play an important role in the applications they target. The Other Memory ICs component is usually regarded as a type of this component.
S72XS256RE0AHBJ10 Features
Package / Case: 133-VFBGA
S72XS256RE0AHBJ10 Applications
There are a lot of Cypress Semiconductor Corp
S72XS256RE0AHBJ10 Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Non-Volatile. The case comes in Tray size. The case is embedded in 133-VFBGA. Memory size on the chip is 256Mbit Flash 2565Mbit DDR DRAM. This device uses takes advantage of the FLASH, RAM format. The device's extended operating temperature range of -25°C~85°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 1.7V~1.95V. The recommended mounting type for this device is Surface Mount. On the chip, there are 133 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 108MHz range. This memory chip requires only 1.8V of power. XS-R series memory devices play an important role in the applications they target. The Other Memory ICs component is usually regarded as a type of this component.
S72XS256RE0AHBJ10 Features
Package / Case: 133-VFBGA
S72XS256RE0AHBJ10 Applications
There are a lot of Cypress Semiconductor Corp
S72XS256RE0AHBJ10 Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
S72XS256RE0AHBJ10 More Descriptions
IC FLASH RAM 256MBIT PAR 133FBGA
IC FLASH RAM 256MIT PARALLEL
NOR Flash Nor
IC FLASH RAM 256MIT PARALLEL
NOR Flash Nor
The three parts on the right have similar specifications to S72XS256RE0AHBJ10.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeSubcategoryTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityLengthHeight Seated (Max)WidthRoHS StatusECCN CodeView Compare
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S72XS256RE0AHBJ1026 WeeksSurface Mount133-VFBGAYES-25°C~85°C TATrayXS-RActive3 (168 Hours)1338542.32.00.71Other Memory ICsFLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B133Not Qualified1.95V1.8V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant--
-
16 WeeksSurface Mount133-VFBGAYES-40°C~85°C TATrayXS-RActive3 (168 Hours)1338542.32.00.51Other Memory ICsFLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B133Not Qualified1.95V1.8V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant3A991.B.1.A
-
26 WeeksSurface Mount133-VFBGAYES-25°C~85°C TATape & Reel (TR)XS-RActive3 (168 Hours)1338542.32.00.71Other Memory ICsFLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B133Not Qualified1.95V1.8V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant-
-
13 WeeksSurface Mount133-VFBGAYES-40°C~85°C TATrayXS-RActive3 (168 Hours)1338542.32.00.71-FLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B133-1.95V-1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant-
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