Cypress Semiconductor Corp S72XS256RE0AHBJ13
- Part Number:
- S72XS256RE0AHBJ13
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7372341-S72XS256RE0AHBJ13
- Description:
- 1.8V V XS-R Memory IC XS-R Series 8mm mm
- Datasheet:
- S72XS256RE0AHBJ13
Cypress Semiconductor Corp S72XS256RE0AHBJ13 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S72XS256RE0AHBJ13.
- Factory Lead Time26 Weeks
- Mounting TypeSurface Mount
- Package / Case133-VFBGA
- Surface MountYES
- Operating Temperature-25°C~85°C TA
- PackagingTape & Reel (TR)
- SeriesXS-R
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations133
- HTS Code8542.32.00.71
- SubcategoryOther Memory ICs
- TechnologyFLASH, DRAM
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.5mm
- JESD-30 CodeS-PBGA-B133
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.95V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size256Mbit Flash 2565Mbit DDR DRAM
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency108MHz
- Memory FormatFLASH, RAM
- Memory InterfaceParallel
- Organization16MX16
- Memory Width16
- Memory Density268435456 bit
- Length8mm
- Height Seated (Max)1mm
- Width8mm
- RoHS StatusROHS3 Compliant
S72XS256RE0AHBJ13 Overview
There is a Non-Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 133-VFBGA case embedded in it. 256Mbit Flash 2565Mbit DDR DRAM is the chip's memory size. FLASH, RAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.7V~1.95V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 133 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. In this memory, the clock frequency rotation is within an 108MHz range. Power supplies for this memory chip are merely 1.8V . Its target applications rely heavily on the XS-R series memory devices. Other Memory ICs-types are usually considered to be this component.
S72XS256RE0AHBJ13 Features
Package / Case: 133-VFBGA
S72XS256RE0AHBJ13 Applications
There are a lot of Cypress Semiconductor Corp
S72XS256RE0AHBJ13 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
There is a Non-Volatile memory type associated with this device. Tape & Reel (TR)-cases are available. There is a 133-VFBGA case embedded in it. 256Mbit Flash 2565Mbit DDR DRAM is the chip's memory size. FLASH, RAM-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 1.7V~1.95V. A Surface Mount mounting type is recommended for this product. The chip is terminated with 133 terminations. In total, this part supports 1 functions. Memory devices such as this one are designed to be powered by 1.8V and should be used as such. In this memory, the clock frequency rotation is within an 108MHz range. Power supplies for this memory chip are merely 1.8V . Its target applications rely heavily on the XS-R series memory devices. Other Memory ICs-types are usually considered to be this component.
S72XS256RE0AHBJ13 Features
Package / Case: 133-VFBGA
S72XS256RE0AHBJ13 Applications
There are a lot of Cypress Semiconductor Corp
S72XS256RE0AHBJ13 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
S72XS256RE0AHBJ13 More Descriptions
IC FLASH RAM 256MBIT PAR 133FBGA
IC FLASH RAM 256MIT PARALLEL
NOR Flash Nor
IC FLASH RAM 256MIT PARALLEL
NOR Flash Nor
The three parts on the right have similar specifications to S72XS256RE0AHBJ13.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeSubcategoryTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityLengthHeight Seated (Max)WidthRoHS StatusECCN CodeView Compare
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S72XS256RE0AHBJ1326 WeeksSurface Mount133-VFBGAYES-25°C~85°C TATape & Reel (TR)XS-RActive3 (168 Hours)1338542.32.00.71Other Memory ICsFLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B133Not Qualified1.95V1.8V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant--
-
16 WeeksSurface Mount133-VFBGAYES-40°C~85°C TATrayXS-RActive3 (168 Hours)1338542.32.00.51Other Memory ICsFLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B133Not Qualified1.95V1.8V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant3A991.B.1.A
-
13 WeeksSurface Mount133-VFBGAYES-40°C~85°C TATape & Reel (TR)XS-RActive3 (168 Hours)1338542.32.00.71-FLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B133-1.95V-1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant-
-
13 WeeksSurface Mount133-VFBGAYES-40°C~85°C TATape & Reel (TR)XS-RActive3 (168 Hours)1338542.32.00.71-FLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B133-1.95V-1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant-
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