Cypress Semiconductor Corp S72XS256RE0AHBJ23
- Part Number:
- S72XS256RE0AHBJ23
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 7372470-S72XS256RE0AHBJ23
- Description:
- XS-R Memory IC XS-R Series 8mm mm
- ECAD Model:
-
- Datasheet:
- S72XS256RE0AHBJ23
Cypress Semiconductor Corp S72XS256RE0AHBJ23 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S72XS256RE0AHBJ23.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case133-VFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- SeriesXS-R
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations133
- HTS Code8542.32.00.71
- TechnologyFLASH, DRAM
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.5mm
- JESD-30 CodeS-PBGA-B133
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size256Mbit Flash 2565Mbit DDR DRAM
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency108MHz
- Memory FormatFLASH, RAM
- Memory InterfaceParallel
- Organization16MX16
- Memory Width16
- Memory Density268435456 bit
- Length8mm
- Height Seated (Max)1mm
- Width8mm
- RoHS StatusROHS3 Compliant
S72XS256RE0AHBJ23 Overview
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 133-VFBGA case contains it. The chip has an 256Mbit Flash 2565Mbit DDR DRAM memory. This device uses a FLASH, RAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.7V~1.95V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 133 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.8V of power. It is important to note that the memory has a clock frequency rotation within the range of 108MHz. In its target applications, this memory ics plays an important role as a member of the XS-R series of memory devices.
S72XS256RE0AHBJ23 Features
Package / Case: 133-VFBGA
S72XS256RE0AHBJ23 Applications
There are a lot of Cypress Semiconductor Corp
S72XS256RE0AHBJ23 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 133-VFBGA case contains it. The chip has an 256Mbit Flash 2565Mbit DDR DRAM memory. This device uses a FLASH, RAM-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 1.7V~1.95V can be supplied to memory ics. Its recommended mounting type is Surface Mount. The chip has 133 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.8V of power. It is important to note that the memory has a clock frequency rotation within the range of 108MHz. In its target applications, this memory ics plays an important role as a member of the XS-R series of memory devices.
S72XS256RE0AHBJ23 Features
Package / Case: 133-VFBGA
S72XS256RE0AHBJ23 Applications
There are a lot of Cypress Semiconductor Corp
S72XS256RE0AHBJ23 Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
S72XS256RE0AHBJ23 More Descriptions
IC FLASH RAM 256MBIT PAR 133FBGA
Memory Circuit, 16MX16, CMOS, PBGA133
Tape And Reel / Ic 65Nm Cmos 1.8Volt Mcp Aadm Flash And Lpddr Mcp, 108/166Mhz, Top Boot, Tray Project U748b
Memory Circuit, 16MX16, CMOS, PBGA133
Tape And Reel / Ic 65Nm Cmos 1.8Volt Mcp Aadm Flash And Lpddr Mcp, 108/166Mhz, Top Boot, Tray Project U748b
The three parts on the right have similar specifications to S72XS256RE0AHBJ23.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityLengthHeight Seated (Max)WidthRoHS StatusECCN CodeSubcategoryQualification StatusPower SuppliesMountNumber of PinsPublishedAdditional FeatureOperating Supply VoltageRadiation HardeningView Compare
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S72XS256RE0AHBJ2313 WeeksSurface Mount133-VFBGAYES-40°C~85°C TATape & Reel (TR)XS-RActive3 (168 Hours)1338542.32.00.71FLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B1331.95V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant----------- -
16 WeeksSurface Mount133-VFBGAYES-40°C~85°C TATrayXS-RActive3 (168 Hours)1338542.32.00.51FLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B1331.95V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant3A991.B.1.AOther Memory ICsNot Qualified1.8V------
-
16 WeeksSurface Mount133-VFBGAYES-40°C~85°C TATape & Reel (TR)XS-RActive3 (168 Hours)1338542.32.00.51FLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mmS-PBGA-B1331.95V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-VolatileSYNCHRONOUS108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant3A991.B.1.AOther Memory ICsNot Qualified1.8V------
-
-Surface Mount133-VFBGA--25°C~85°C TATrayXS-RObsolete3 (168 Hours)1338542.32.00.71FLASH, DRAM1.7V~1.95VBOTTOM11.8V0.5mm-1.95V1.7V256Mbit Flash 2565Mbit DDR DRAMNon-Volatile-108MHzFLASH, RAMParallel16MX1616268435456 bit8mm1mm8mmROHS3 Compliant3A991.B.1.AOther Memory ICs--Surface Mount1332002DRAM IS ORGANISED AS 16M X 161.8VNo
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