Diodes Incorporated ZXMP7A17KTC
- Part Number:
- ZXMP7A17KTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478305-ZXMP7A17KTC
- Description:
- MOSFET P-CH 70V 5.7A D PAK
- Datasheet:
- ZXMP7A17KTC
Diodes Incorporated ZXMP7A17KTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP7A17KTC.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight3.949996g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance160mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- Voltage - Rated DC-70V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-5.7A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.11W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation9.25W
- Case ConnectionDRAIN
- Turn On Delay Time2.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 2.1A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds635pF @ 40V
- Current - Continuous Drain (Id) @ 25°C3.8A Ta
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time3.4ns
- Drain to Source Voltage (Vdss)70V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time27.9 ns
- Continuous Drain Current (ID)5.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-70V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP7A17KTC Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 635pF @ 40V.This device conducts a continuous drain current (ID) of 5.7A, which is the maximum continuous current transistor can conduct.Using VGS=-70V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -70V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 27.9 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 2.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 70V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
ZXMP7A17KTC Features
a continuous drain current (ID) of 5.7A
a drain-to-source breakdown voltage of -70V voltage
the turn-off delay time is 27.9 ns
a 70V drain to source voltage (Vdss)
ZXMP7A17KTC Applications
There are a lot of Diodes Incorporated
ZXMP7A17KTC applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 635pF @ 40V.This device conducts a continuous drain current (ID) of 5.7A, which is the maximum continuous current transistor can conduct.Using VGS=-70V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -70V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 27.9 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 2.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 70V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
ZXMP7A17KTC Features
a continuous drain current (ID) of 5.7A
a drain-to-source breakdown voltage of -70V voltage
the turn-off delay time is 27.9 ns
a 70V drain to source voltage (Vdss)
ZXMP7A17KTC Applications
There are a lot of Diodes Incorporated
ZXMP7A17KTC applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
ZXMP7A17KTC More Descriptions
ZXMP7A17K Series P-Channel 70 V 0.16 Ohm Power MOSFET Surface Mount - TO-252-3
Mosfet, Aec-Q101, P Ch, -70V, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMP7A17KTC
Trans MOSFET P-CH 70V 3.8A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 70V 5.7A D PAK
MOSFET, AEC-Q101, P CH, -70V, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.8A; Drain Source Voltage Vds: -70V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 4.17W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Mosfet, Aec-Q101, P Ch, -70V, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMP7A17KTC
Trans MOSFET P-CH 70V 3.8A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 70V 5.7A D PAK
MOSFET, AEC-Q101, P CH, -70V, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.8A; Drain Source Voltage Vds: -70V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 4.17W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to ZXMP7A17KTC.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureSubcategoryMax Power DissipationTerminal PositionFeedback Cap-Max (Crss)Contact PlatingThreshold VoltageMax Junction Temperature (Tj)View Compare
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ZXMP7A17KTC17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)2EAR99160mOhmMatte Tin (Sn)LOW THRESHOLD-70VMOSFET (Metal Oxide)GULL WING260-5.7A403R-PSSO-G2112.11W TaSingleENHANCEMENT MODE9.25WDRAIN2.5 nsP-ChannelSWITCHING160m Ω @ 2.1A, 10V1V @ 250μA635pF @ 40V3.8A Ta18nC @ 10V3.4ns70V4.5V 10V±20V8 ns27.9 ns5.7A20V-70V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free----------
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13 WeeksSurface MountSurface MountTO-261-4, TO-261AA4---Cut Tape (CT)2009e3noDiscontinued1 (Unlimited)4EAR99350mOhmMatte Tin (Sn)--100VMOSFET (Metal Oxide)GULL WING260-1.6A404-11-SingleENHANCEMENT MODE3.9W-3 nsP-ChannelSWITCHING350m Ω @ 1.4A, 10V4V @ 250μA424pF @ 50V1.7A Ta10.7nC @ 10V3.5ns100V--7.2 ns13.4 ns2.4A20V-100V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free150°C-55°COther Transistors3.9WDUAL----
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36 WeeksSurface MountSurface MountSOT-23-3 Flat Leads37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)3EAR9928OhmMatte Tin (Sn)--MOSFET (Metal Oxide)-260-403-111W TaSingleENHANCEMENT MODE1.5W-7 nsP-ChannelSWITCHING28 Ω @ 150mA, 10V3.5V @ 250μA100pF @ 25V137mA Ta-15ns200V10V±20V15 ns12 ns137mA20V-200V1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free----DUAL7 pF---
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17 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3noActive1 (Unlimited)4EAR9945mOhm-LOW THRESHOLD-30VMOSFET (Metal Oxide)GULL WING260-7.5A404-112W TaSingleENHANCEMENT MODE2WDRAIN3.8 nsP-ChannelSWITCHING45m Ω @ 4.2A, 10V1V @ 250μA1022pF @ 15V5.4A Ta29.6nC @ 10V6.5ns30V4.5V 10V±20V21.4 ns37.1 ns-5.4A20V-30V1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--Other Transistors-DUAL-Tin-1V150°C
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