Diodes Incorporated ZXMP7A17GTA
- Part Number:
- ZXMP7A17GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848478-ZXMP7A17GTA
- Description:
- MOSFET P-CH 70V 3.7A SOT-223
- Datasheet:
- ZXMP7A17GTA
Diodes Incorporated ZXMP7A17GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP7A17GTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance160mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD; FAST SWITCHING
- SubcategoryOther Transistors
- Voltage - Rated DC-70V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-3.7A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.9W
- Case ConnectionDRAIN
- Turn On Delay Time2.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 2.1A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds635pF @ 40V
- Current - Continuous Drain (Id) @ 25°C2.6A Ta
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time3.4ns
- Drain to Source Voltage (Vdss)70V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time27.9 ns
- Continuous Drain Current (ID)3.7A
- Gate to Source Voltage (Vgs)20V
- Pulsed Drain Current-Max (IDM)9.6A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP7A17GTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 635pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.7A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 27.9 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9.6A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 70V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
ZXMP7A17GTA Features
a continuous drain current (ID) of 3.7A
the turn-off delay time is 27.9 ns
based on its rated peak drain current 9.6A.
a 70V drain to source voltage (Vdss)
ZXMP7A17GTA Applications
There are a lot of Diodes Incorporated
ZXMP7A17GTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 635pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.7A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 27.9 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9.6A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 70V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
ZXMP7A17GTA Features
a continuous drain current (ID) of 3.7A
the turn-off delay time is 27.9 ns
based on its rated peak drain current 9.6A.
a 70V drain to source voltage (Vdss)
ZXMP7A17GTA Applications
There are a lot of Diodes Incorporated
ZXMP7A17GTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZXMP7A17GTA More Descriptions
P-Channel 70 V 0.16 Ohm Power MOSFET Surface Mount - SOT-223-3
Trans MOSFET P-CH 70V 3.7A Automotive 4-Pin(3 Tab) SOT-223 T/R
MOSFET P-Channel 70V 3.7A SOT223 | Diodes Inc ZXMP7A17GTA
Power Field-Effect Transistor, 3.7A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Trans MOSFET P-CH 70V 3.7A Automotive 4-Pin(3 Tab) SOT-223 T/R
MOSFET P-Channel 70V 3.7A SOT223 | Diodes Inc ZXMP7A17GTA
Power Field-Effect Transistor, 3.7A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
The three parts on the right have similar specifications to ZXMP7A17GTA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeNumber of PinsDrain to Source Breakdown VoltageFeedback Cap-Max (Crss)Contact PlatingTerminationThreshold VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsManufacturer Package IdentifierView Compare
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ZXMP7A17GTA17 WeeksSurface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99160mOhmMatte Tin (Sn)LOW THRESHOLD; FAST SWITCHINGOther Transistors-70VMOSFET (Metal Oxide)DUALGULL WING260-3.7A404R-PDSO-G4112W TaSingleENHANCEMENT MODE3.9WDRAIN2.5 nsP-ChannelSWITCHING160m Ω @ 2.1A, 10V1V @ 250μA635pF @ 40V2.6A Ta18nC @ 10V3.4ns70V4.5V 10V±20V8 ns27.9 ns3.7A20V9.6A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-----------
-
36 WeeksSurface MountSurface MountSOT-23-3 Flat Leads7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)3EAR9928OhmMatte Tin (Sn)---MOSFET (Metal Oxide)DUAL-260-403-111W TaSingleENHANCEMENT MODE1.5W-7 nsP-ChannelSWITCHING28 Ω @ 150mA, 10V3.5V @ 250μA100pF @ 25V137mA Ta-15ns200V10V±20V15 ns12 ns137mA20V-1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free3-200V7 pF-------
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17 WeeksSurface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3noActive1 (Unlimited)4EAR9960mOhm--Other Transistors-40VMOSFET (Metal Oxide)DUALGULL WING260-6.4A404-112W TaSingleENHANCEMENT MODE3.9WDRAIN2.33 nsP-ChannelSWITCHING60m Ω @ 3.8A, 10V1V @ 250μA1007pF @ 20V4.6A Ta26.1nC @ 10V8.84ns40V4.5V 10V±20V12.54 ns29.18 ns6.4A20V-1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free4-40V-TinSMD/SMT-1V-40V150°C-1 V-
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17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633.949996gSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99235mOhm-FAST SWITCHING, LOW THRESHOLD--MOSFET (Metal Oxide)DUALGULL WING260-404R-PDSO-G4112.15W TaSingleENHANCEMENT MODE4.24W-4.3 nsP-ChannelSWITCHING235m Ω @ 2.1A, 10V4V @ 250μA717pF @ 50V3A Ta16.5nC @ 10V5.2ns100V6V 10V±20V12.1 ns20 ns4.6A20V-2.52mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free3-100V-Tin---150°C-TO252 (DPAK)
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