Diodes Incorporated ZXMP4A16GTA
- Part Number:
- ZXMP4A16GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070091-ZXMP4A16GTA
- Description:
- MOSFET P-CH 40V 6.4A SOT223
- Datasheet:
- ZXMP4A16GTA
Diodes Incorporated ZXMP4A16GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP4A16GTA.
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance60mOhm
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-6.4A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.9W
- Case ConnectionDRAIN
- Turn On Delay Time2.33 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs60m Ω @ 3.8A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1007pF @ 20V
- Current - Continuous Drain (Id) @ 25°C4.6A Ta
- Gate Charge (Qg) (Max) @ Vgs26.1nC @ 10V
- Rise Time8.84ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12.54 ns
- Turn-Off Delay Time29.18 ns
- Continuous Drain Current (ID)6.4A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-40V
- Dual Supply Voltage-40V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-1 V
- Height1.8mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP4A16GTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1007pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-40V. And this device has -40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29.18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.33 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1V threshold voltage. Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
ZXMP4A16GTA Features
a continuous drain current (ID) of 6.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 29.18 ns
a threshold voltage of -1V
a 40V drain to source voltage (Vdss)
ZXMP4A16GTA Applications
There are a lot of Diodes Incorporated
ZXMP4A16GTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1007pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-40V. And this device has -40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29.18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.33 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1V threshold voltage. Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
ZXMP4A16GTA Features
a continuous drain current (ID) of 6.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 29.18 ns
a threshold voltage of -1V
a 40V drain to source voltage (Vdss)
ZXMP4A16GTA Applications
There are a lot of Diodes Incorporated
ZXMP4A16GTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZXMP4A16GTA More Descriptions
ZXMP4A16G Series 40 V 0.06 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
Mosfet Bvdss: 31V~40V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZXMP4A16GTA
Trans MOSFET P-CH 40V 6.4A 4-Pin(3 Tab) SOT-223 T/R
MOSFET, P, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:6.4A; Source Voltage Vds:-40V; On Resistance Rds(on):0.06ohm;
MOSFET, P, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: 6.4A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: -6.4A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 60mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 21A; SMD Marking: ZXMP4A16; Termination Type: Surface Mount Device; Voltage Vds Typ: -40V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Min: -1V
Mosfet Bvdss: 31V~40V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZXMP4A16GTA
Trans MOSFET P-CH 40V 6.4A 4-Pin(3 Tab) SOT-223 T/R
MOSFET, P, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:6.4A; Source Voltage Vds:-40V; On Resistance Rds(on):0.06ohm;
MOSFET, P, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: 6.4A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: -6.4A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 60mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 21A; SMD Marking: ZXMP4A16; Termination Type: Surface Mount Device; Voltage Vds Typ: -40V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Min: -1V
The three parts on the right have similar specifications to ZXMP4A16GTA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishMax Operating TemperatureMin Operating TemperatureMax Power DissipationFeedback Cap-Max (Crss)Additional FeatureDrain Current-Max (Abs) (ID)View Compare
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ZXMP4A16GTA17 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3noActive1 (Unlimited)4SMD/SMTEAR9960mOhmOther Transistors-40VMOSFET (Metal Oxide)DUALGULL WING260-6.4A404112W TaSingleENHANCEMENT MODE3.9WDRAIN2.33 nsP-ChannelSWITCHING60m Ω @ 3.8A, 10V1V @ 250μA1007pF @ 20V4.6A Ta26.1nC @ 10V8.84ns40V4.5V 10V±20V12.54 ns29.18 ns6.4A-1V20V-40V-40V150°C-1 V1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--------
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13 Weeks-Surface MountSurface MountTO-261-4, TO-261AA4---Cut Tape (CT)2009e3noDiscontinued1 (Unlimited)4-EAR99350mOhmOther Transistors-100VMOSFET (Metal Oxide)DUALGULL WING260-1.6A40411-SingleENHANCEMENT MODE3.9W-3 nsP-ChannelSWITCHING350m Ω @ 1.4A, 10V4V @ 250μA424pF @ 50V1.7A Ta10.7nC @ 10V3.5ns100V--7.2 ns13.4 ns2.4A-20V-100V---1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)150°C-55°C3.9W---
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36 Weeks-Surface MountSurface MountSOT-23-3 Flat Leads37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)3-EAR9928Ohm--MOSFET (Metal Oxide)DUAL-260-403111W TaSingleENHANCEMENT MODE1.5W-7 nsP-ChannelSWITCHING28 Ω @ 150mA, 10V3.5V @ 250μA100pF @ 25V137mA Ta-15ns200V10V±20V15 ns12 ns137mA-20V-200V---1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)---7 pF--
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17 Weeks-Surface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2015e3noActive1 (Unlimited)4-EAR99125mOhmOther Transistors-60VMOSFET (Metal Oxide)DUALGULL WING260-4.1A404112W TaSingleENHANCEMENT MODE2WDRAIN2.6 nsP-ChannelSWITCHING125m Ω @ 2.2A, 10V1V @ 250μA637pF @ 30V3A Ta17.7nC @ 10V3.4ns60V4.5V 10V±20V11.3 ns26.2 ns-3A-1V20V-60V-150°C-1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)----HIGH RELIABILITY3A
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