ZXMP4A16GTA

Diodes Incorporated ZXMP4A16GTA

Part Number:
ZXMP4A16GTA
Manufacturer:
Diodes Incorporated
Ventron No:
3070091-ZXMP4A16GTA
Description:
MOSFET P-CH 40V 6.4A SOT223
ECAD Model:
Datasheet:
ZXMP4A16GTA

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Specifications
Diodes Incorporated ZXMP4A16GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP4A16GTA.
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    60mOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -40V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -6.4A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.9W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    2.33 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 3.8A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1007pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    4.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    26.1nC @ 10V
  • Rise Time
    8.84ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12.54 ns
  • Turn-Off Delay Time
    29.18 ns
  • Continuous Drain Current (ID)
    6.4A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -40V
  • Dual Supply Voltage
    -40V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -1 V
  • Height
    1.8mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMP4A16GTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1007pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-40V. And this device has -40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29.18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.33 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1V threshold voltage. Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

ZXMP4A16GTA Features
a continuous drain current (ID) of 6.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 29.18 ns
a threshold voltage of -1V
a 40V drain to source voltage (Vdss)


ZXMP4A16GTA Applications
There are a lot of Diodes Incorporated
ZXMP4A16GTA applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZXMP4A16GTA More Descriptions
ZXMP4A16G Series 40 V 0.06 Ohm P-Channel Enhancement Mode MOSFET - SOT-223
Mosfet Bvdss: 31V~40V Sot223 T&r 1K Rohs Compliant: Yes |Diodes Inc. ZXMP4A16GTA
Trans MOSFET P-CH 40V 6.4A 4-Pin(3 Tab) SOT-223 T/R
MOSFET, P, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:6.4A; Source Voltage Vds:-40V; On Resistance Rds(on):0.06ohm;
MOSFET, P, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: 6.4A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: -6.4A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 60mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 21A; SMD Marking: ZXMP4A16; Termination Type: Surface Mount Device; Voltage Vds Typ: -40V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Min: -1V
Product Comparison
The three parts on the right have similar specifications to ZXMP4A16GTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Feedback Cap-Max (Crss)
    Additional Feature
    Drain Current-Max (Abs) (ID)
    View Compare
  • ZXMP4A16GTA
    ZXMP4A16GTA
    17 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    e3
    no
    Active
    1 (Unlimited)
    4
    SMD/SMT
    EAR99
    60mOhm
    Other Transistors
    -40V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -6.4A
    40
    4
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    3.9W
    DRAIN
    2.33 ns
    P-Channel
    SWITCHING
    60m Ω @ 3.8A, 10V
    1V @ 250μA
    1007pF @ 20V
    4.6A Ta
    26.1nC @ 10V
    8.84ns
    40V
    4.5V 10V
    ±20V
    12.54 ns
    29.18 ns
    6.4A
    -1V
    20V
    -40V
    -40V
    150°C
    -1 V
    1.8mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXMP10A17GTA
    13 Weeks
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    -
    -
    -
    Cut Tape (CT)
    2009
    e3
    no
    Discontinued
    1 (Unlimited)
    4
    -
    EAR99
    350mOhm
    Other Transistors
    -100V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -1.6A
    40
    4
    1
    1
    -
    Single
    ENHANCEMENT MODE
    3.9W
    -
    3 ns
    P-Channel
    SWITCHING
    350m Ω @ 1.4A, 10V
    4V @ 250μA
    424pF @ 50V
    1.7A Ta
    10.7nC @ 10V
    3.5ns
    100V
    -
    -
    7.2 ns
    13.4 ns
    2.4A
    -
    20V
    -100V
    -
    -
    -
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    150°C
    -55°C
    3.9W
    -
    -
    -
  • ZXMP2120FFTA
    36 Weeks
    -
    Surface Mount
    Surface Mount
    SOT-23-3 Flat Leads
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    28Ohm
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    260
    -
    40
    3
    1
    1
    1W Ta
    Single
    ENHANCEMENT MODE
    1.5W
    -
    7 ns
    P-Channel
    SWITCHING
    28 Ω @ 150mA, 10V
    3.5V @ 250μA
    100pF @ 25V
    137mA Ta
    -
    15ns
    200V
    10V
    ±20V
    15 ns
    12 ns
    137mA
    -
    20V
    -200V
    -
    -
    -
    1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    -
    -
    -
    7 pF
    -
    -
  • ZXMP6A17GTA
    17 Weeks
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    no
    Active
    1 (Unlimited)
    4
    -
    EAR99
    125mOhm
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -4.1A
    40
    4
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    2.6 ns
    P-Channel
    SWITCHING
    125m Ω @ 2.2A, 10V
    1V @ 250μA
    637pF @ 30V
    3A Ta
    17.7nC @ 10V
    3.4ns
    60V
    4.5V 10V
    ±20V
    11.3 ns
    26.2 ns
    -3A
    -1V
    20V
    -60V
    -
    150°C
    -
    1.8mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Matte Tin (Sn)
    -
    -
    -
    -
    HIGH RELIABILITY
    3A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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