Diodes Incorporated ZXMP3A13FTA
- Part Number:
- ZXMP3A13FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478061-ZXMP3A13FTA
- Description:
- MOSFET P-CH 30V 1.4A SOT23-3
- Datasheet:
- ZXMP3A13FTA
Diodes Incorporated ZXMP3A13FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP3A13FTA.
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance210mOhm
- Additional FeatureLOW THRESHOLD
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1.6A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation806mW
- Turn On Delay Time1.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs210m Ω @ 1.4A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds206pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.4A Ta
- Gate Charge (Qg) (Max) @ Vgs6.4nC @ 10V
- Rise Time3ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time11.1 ns
- Continuous Drain Current (ID)1.6A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP3A13FTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 206pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.6A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.1 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 1.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1V threshold voltage. Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
ZXMP3A13FTA Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 11.1 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
ZXMP3A13FTA Applications
There are a lot of Diodes Incorporated
ZXMP3A13FTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 206pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.6A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.1 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 1.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1V threshold voltage. Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
ZXMP3A13FTA Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 11.1 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
ZXMP3A13FTA Applications
There are a lot of Diodes Incorporated
ZXMP3A13FTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZXMP3A13FTA More Descriptions
ZXMP3A13 Series 30 V 0.21 Ohm P-Channel Enhancement Mode MOSFET - SOT-23-3
Mosfet Bvdss: 25V~30V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZXMP3A13FTA
Trans MOSFET P-CH 30V 1.6A 3-Pin SOT-23 T/R
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Source Voltage Vds:-30V; On Resistance Rds(on):0.21ohm;
MOSFET, P, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 806mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -1.6A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 210mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 6A; SMD Marking: 313; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Min: -1V
Mosfet Bvdss: 25V~30V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. ZXMP3A13FTA
Trans MOSFET P-CH 30V 1.6A 3-Pin SOT-23 T/R
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Source Voltage Vds:-30V; On Resistance Rds(on):0.21ohm;
MOSFET, P, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.21ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 806mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -1.6A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 210mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 6A; SMD Marking: 313; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Min: -1V
The three parts on the right have similar specifications to ZXMP3A13FTA.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishDrain to Source Breakdown VoltageFeedback Cap-Max (Crss)Manufacturer Package IdentifierJESD-30 CodeMax Junction Temperature (Tj)Case ConnectionPulsed Drain Current-Max (IDM)View Compare
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ZXMP3A13FTA17 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2002e3yesActive1 (Unlimited)3EAR99210mOhmLOW THRESHOLDOther Transistors-30VMOSFET (Metal Oxide)DUALGULL WING260-1.6A40311625mW TaSingleENHANCEMENT MODE806mW1.5 nsP-ChannelSWITCHING210m Ω @ 1.4A, 10V1V @ 250μA206pF @ 15V1.4A Ta6.4nC @ 10V3ns30V4.5V 10V±20V3 ns11.1 ns1.6A-1V20V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------
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36 Weeks-Surface MountSurface MountSOT-23-3 Flat Leads37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete1 (Unlimited)3EAR9928Ohm---MOSFET (Metal Oxide)DUAL-260-403111W TaSingleENHANCEMENT MODE1.5W7 nsP-ChannelSWITCHING28 Ω @ 150mA, 10V3.5V @ 250μA100pF @ 25V137mA Ta-15ns200V10V±20V15 ns12 ns137mA-20V1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)-200V7 pF-----
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17 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99235mOhmFAST SWITCHING, LOW THRESHOLD--MOSFET (Metal Oxide)DUALGULL WING260-404112.15W TaSingleENHANCEMENT MODE4.24W4.3 nsP-ChannelSWITCHING235m Ω @ 2.1A, 10V4V @ 250μA717pF @ 50V3A Ta16.5nC @ 10V5.2ns100V6V 10V±20V12.1 ns20 ns4.6A-20V2.52mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free--100V-TO252 (DPAK)R-PDSO-G4150°C--
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17 Weeks-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99160mOhmLOW THRESHOLD; FAST SWITCHINGOther Transistors-70VMOSFET (Metal Oxide)DUALGULL WING260-3.7A404112W TaSingleENHANCEMENT MODE3.9W2.5 nsP-ChannelSWITCHING160m Ω @ 2.1A, 10V1V @ 250μA635pF @ 40V2.6A Ta18nC @ 10V3.4ns70V4.5V 10V±20V8 ns27.9 ns3.7A-20V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeMatte Tin (Sn)---R-PDSO-G4-DRAIN9.6A
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