Diodes Incorporated ZXMP10A18KTC
- Part Number:
- ZXMP10A18KTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478153-ZXMP10A18KTC
- Description:
- MOSFET P-CH 100V 3.8A DPAK
- Datasheet:
- ZXMP10A18KTC
Diodes Incorporated ZXMP10A18KTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMP10A18KTC.
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight3.949996g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance150mOhm
- Additional FeatureLOW THRESHOLD
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.17W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation4.3W
- Case ConnectionDRAIN
- Turn On Delay Time4.9 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs150m Ω @ 2.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1055pF @ 50V
- Current - Continuous Drain (Id) @ 25°C3.8A Ta
- Gate Charge (Qg) (Max) @ Vgs26.9nC @ 10V
- Rise Time6.8ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)17.9 ns
- Turn-Off Delay Time33.9 ns
- Continuous Drain Current (ID)5.9A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMP10A18KTC Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1055pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.As a result of its turn-off delay time, which is 33.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -4V.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
ZXMP10A18KTC Features
a continuous drain current (ID) of 5.9A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 33.9 ns
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)
ZXMP10A18KTC Applications
There are a lot of Diodes Incorporated
ZXMP10A18KTC applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1055pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.As a result of its turn-off delay time, which is 33.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -4V.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
ZXMP10A18KTC Features
a continuous drain current (ID) of 5.9A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 33.9 ns
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)
ZXMP10A18KTC Applications
There are a lot of Diodes Incorporated
ZXMP10A18KTC applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
ZXMP10A18KTC More Descriptions
Mosfet Bvdss: 61V~100V To252 T&r 2.5K Rohs Compliant: Yes |Diodes Inc. ZXMP10A18KTC
Trans MOSFET P-CH 100V 3.8A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 100V 3.8A DPAK
MOSFET,P CH,100V,3.8A,DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Source Voltage Vds:-100V; On Resistance
MOSFET,P CH,100V,3.8A,DPAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 4.3W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: -5.9A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
Trans MOSFET P-CH 100V 3.8A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 100V 3.8A DPAK
MOSFET,P CH,100V,3.8A,DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.9A; Source Voltage Vds:-100V; On Resistance
MOSFET,P CH,100V,3.8A,DPAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 4.3W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: -5.9A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
The three parts on the right have similar specifications to ZXMP10A18KTC.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminationSubcategoryVoltage - Rated DCTerminal PositionCurrent RatingDual Supply VoltageMax Junction Temperature (Tj)Nominal VgsManufacturer Package IdentifierView Compare
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ZXMP10A18KTC17 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)2EAR99150mOhmLOW THRESHOLDMOSFET (Metal Oxide)GULL WING260403R-PSSO-G2112.17W TaSingleENHANCEMENT MODE4.3WDRAIN4.9 nsP-ChannelSWITCHING150m Ω @ 2.8A, 10V4V @ 250μA1055pF @ 50V3.8A Ta26.9nC @ 10V6.8ns100V6V 10V±20V17.9 ns33.9 ns5.9A-4V20V-100V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free----------
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17 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2003e3noActive1 (Unlimited)4EAR9960mOhm-MOSFET (Metal Oxide)GULL WING260404-112W TaSingleENHANCEMENT MODE3.9WDRAIN2.33 nsP-ChannelSWITCHING60m Ω @ 3.8A, 10V1V @ 250μA1007pF @ 20V4.6A Ta26.1nC @ 10V8.84ns40V4.5V 10V±20V12.54 ns29.18 ns6.4A-1V20V-40V1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead FreeSMD/SMTOther Transistors-40VDUAL-6.4A-40V150°C-1 V-
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17 WeeksTinSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3noActive1 (Unlimited)4EAR9945mOhmLOW THRESHOLDMOSFET (Metal Oxide)GULL WING260404-112W TaSingleENHANCEMENT MODE2WDRAIN3.8 nsP-ChannelSWITCHING45m Ω @ 4.2A, 10V1V @ 250μA1022pF @ 15V5.4A Ta29.6nC @ 10V6.5ns30V4.5V 10V±20V21.4 ns37.1 ns-5.4A-1V20V-30V1.8mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-Other Transistors-30VDUAL-7.5A-150°C--
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17 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99235mOhmFAST SWITCHING, LOW THRESHOLDMOSFET (Metal Oxide)GULL WING260404R-PDSO-G4112.15W TaSingleENHANCEMENT MODE4.24W-4.3 nsP-ChannelSWITCHING235m Ω @ 2.1A, 10V4V @ 250μA717pF @ 50V3A Ta16.5nC @ 10V5.2ns100V6V 10V±20V12.1 ns20 ns4.6A-20V-100V2.52mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free---DUAL--150°C-TO252 (DPAK)
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