Diodes Incorporated ZVN4306A
- Part Number:
- ZVN4306A
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848990-ZVN4306A
- Description:
- MOSFET N-CH 60V 1.1A TO92-3
- Datasheet:
- ZVN4306A
Diodes Incorporated ZVN4306A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN4306A.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2012
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance330mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating1.1A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max850mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation850mW
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs330m Ω @ 3A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.1A Ta
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)1.1A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN4306A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 350pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.1A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
ZVN4306A Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 30 ns
a threshold voltage of 3V
ZVN4306A Applications
There are a lot of Diodes Incorporated
ZVN4306A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 350pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.1A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
ZVN4306A Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 30 ns
a threshold voltage of 3V
ZVN4306A Applications
There are a lot of Diodes Incorporated
ZVN4306A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
ZVN4306A More Descriptions
N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
MOSFET N-Channel 60V 1.1A E-Line | Diodes Inc ZVN4306A
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
MOSFET N-Channel 60V 1.1A E-Line | Diodes Inc ZVN4306A
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to ZVN4306A.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRoHS StatusLead FreeAdditional FeatureJESD-30 CodeCase ConnectionDrain Current-Max (Abs) (ID)Radiation HardeningDrain to Source Voltage (Vdss)Contact PlatingPulsed Drain Current-Max (IDM)View Compare
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ZVN4306A17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2012e3noActive1 (Unlimited)3EAR99330mOhmMatte Tin (Sn)FET General Purpose Powers60VMOSFET (Metal Oxide)BOTTOMWIRE260not_compliant1.1A403Not Qualified11850mW TaSingleENHANCEMENT MODE850mW8 nsN-ChannelSWITCHING330m Ω @ 3A, 10V3V @ 1mA350pF @ 25V1.1A Ta25ns5V 10V±20V25 ns30 ns1.1A3V20V60V4.01mm4.77mm2.41mmNo SVHCROHS3 CompliantLead Free---------
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16 WeeksSurface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJCut Tape (CT)1997e3noActive1 (Unlimited)4EAR995.5OhmMatte Tin (Sn)-240VMOSFET (Metal Oxide)DUALGULL WING260-500mA404-112.5W TaSingleENHANCEMENT MODE2.5W2.5 nsN-ChannelSWITCHING5.5 Ω @ 500mA, 10V1.8V @ 1mA200pF @ 25V500mA Ta5ns2.5V 10V±40V16 ns40 ns500mA-40V240V1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead FreeFAST SWITCHINGR-PDSO-G4DRAIN0.5ANo---
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17 Weeks-Through HoleE-Line-3----55°C~150°C TJTape & Box (TB)2006e3-Active1 (Unlimited)-EAR99-Matte Tin (Sn)--MOSFET (Metal Oxide)----------700mW Ta----N-Channel-1 Ω @ 1.5A, 10V3V @ 1mA100pF @ 25V600mA Ta-5V 10V±20V----------ROHS3 Compliant------60V--
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17 WeeksSurface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR991Ohm-FET General Purpose Powers60VMOSFET (Metal Oxide)DUALGULL WING260-1A404-112W TaSingleENHANCEMENT MODE2W8 nsN-ChannelSWITCHING1 Ω @ 1.5A, 10V3V @ 1mA100pF @ 25V1A Ta12ns5V 10V±20V15 ns12 ns1A-20V60V1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead FreeFAST SWITCHINGR-PDSO-G4DRAIN1ANo-Tin8A
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