ZVN4306A

Diodes Incorporated ZVN4306A

Part Number:
ZVN4306A
Manufacturer:
Diodes Incorporated
Ventron No:
2848990-ZVN4306A
Description:
MOSFET N-CH 60V 1.1A TO92-3
ECAD Model:
Datasheet:
ZVN4306A

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Specifications
Diodes Incorporated ZVN4306A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN4306A.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    330mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Current Rating
    1.1A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    850mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    850mW
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    330m Ω @ 3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.1A Ta
  • Rise Time
    25ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    1.1A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Height
    4.01mm
  • Length
    4.77mm
  • Width
    2.41mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVN4306A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 350pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.1A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

ZVN4306A Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 30 ns
a threshold voltage of 3V


ZVN4306A Applications
There are a lot of Diodes Incorporated
ZVN4306A applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
ZVN4306A More Descriptions
N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92
Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
MOSFET N-Channel 60V 1.1A E-Line | Diodes Inc ZVN4306A
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to ZVN4306A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Additional Feature
    JESD-30 Code
    Case Connection
    Drain Current-Max (Abs) (ID)
    Radiation Hardening
    Drain to Source Voltage (Vdss)
    Contact Plating
    Pulsed Drain Current-Max (IDM)
    View Compare
  • ZVN4306A
    ZVN4306A
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    e3
    no
    Active
    1 (Unlimited)
    3
    EAR99
    330mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    60V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    not_compliant
    1.1A
    40
    3
    Not Qualified
    1
    1
    850mW Ta
    Single
    ENHANCEMENT MODE
    850mW
    8 ns
    N-Channel
    SWITCHING
    330m Ω @ 3A, 10V
    3V @ 1mA
    350pF @ 25V
    1.1A Ta
    25ns
    5V 10V
    ±20V
    25 ns
    30 ns
    1.1A
    3V
    20V
    60V
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN4424GTA
    16 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    1997
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    5.5Ohm
    Matte Tin (Sn)
    -
    240V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    500mA
    40
    4
    -
    1
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    2.5 ns
    N-Channel
    SWITCHING
    5.5 Ω @ 500mA, 10V
    1.8V @ 1mA
    200pF @ 25V
    500mA Ta
    5ns
    2.5V 10V
    ±40V
    16 ns
    40 ns
    500mA
    -
    40V
    240V
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    FAST SWITCHING
    R-PDSO-G4
    DRAIN
    0.5A
    No
    -
    -
    -
  • ZVN4206AVSTZ
    17 Weeks
    -
    Through Hole
    E-Line-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Box (TB)
    2006
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    700mW Ta
    -
    -
    -
    -
    N-Channel
    -
    1 Ω @ 1.5A, 10V
    3V @ 1mA
    100pF @ 25V
    600mA Ta
    -
    5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    60V
    -
    -
  • ZVN4206GTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    -
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    1Ohm
    -
    FET General Purpose Powers
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -
    1A
    40
    4
    -
    1
    1
    2W Ta
    Single
    ENHANCEMENT MODE
    2W
    8 ns
    N-Channel
    SWITCHING
    1 Ω @ 1.5A, 10V
    3V @ 1mA
    100pF @ 25V
    1A Ta
    12ns
    5V 10V
    ±20V
    15 ns
    12 ns
    1A
    -
    20V
    60V
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    FAST SWITCHING
    R-PDSO-G4
    DRAIN
    1A
    No
    -
    Tin
    8A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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