Diodes Incorporated ZVN4424ASTOB
- Part Number:
- ZVN4424ASTOB
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3554421-ZVN4424ASTOB
- Description:
- MOSFET N-CH 240V 0.26A TO92-3
- Datasheet:
- ZVN4424ASTOB
Diodes Incorporated ZVN4424ASTOB technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN4424ASTOB.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Voltage - Rated DC240V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating260mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max750mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation750mW
- Turn On Delay Time2.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id1.8V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C260mA Ta
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±40V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)260mA
- Gate to Source Voltage (Vgs)40V
- Drain Current-Max (Abs) (ID)0.26A
- Drain-source On Resistance-Max6Ohm
- Drain to Source Breakdown Voltage240V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVN4424ASTOB Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 200pF @ 25V.This device has a continuous drain current (ID) of [260mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=240V, the drain-source breakdown voltage is 240V.A device's drain current is its maximum continuous current, and this device's drain current is 0.26A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 40V volts.Its overall power consumption can be reduced by using drive voltage (2.5V 10V).
ZVN4424ASTOB Features
a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 40 ns
ZVN4424ASTOB Applications
There are a lot of Diodes Incorporated
ZVN4424ASTOB applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 200pF @ 25V.This device has a continuous drain current (ID) of [260mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=240V, the drain-source breakdown voltage is 240V.A device's drain current is its maximum continuous current, and this device's drain current is 0.26A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 40V volts.Its overall power consumption can be reduced by using drive voltage (2.5V 10V).
ZVN4424ASTOB Features
a continuous drain current (ID) of 260mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 40 ns
ZVN4424ASTOB Applications
There are a lot of Diodes Incorporated
ZVN4424ASTOB applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
ZVN4424ASTOB More Descriptions
Trans MOSFET N-CH 240V 0.26A 3-Pin E-Line
MOSFET N-CH 240V 0.26A TO92-3
Small Signal Field-Effect Transistor, 0.26A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 240V 260MA E-LINE
MOSFETs N-Chnl 240V
MOSFET N-CH 240V 0.26A TO92-3
Small Signal Field-Effect Transistor, 0.26A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 240V 260MA E-LINE
MOSFETs N-Chnl 240V
The three parts on the right have similar specifications to ZVN4424ASTOB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusLead FreeFactory Lead TimePbfree CodeResistanceAdditional FeatureTerminal PositionCase ConnectionHeightLengthWidthREACH SVHCRadiation HardeningDrain to Source Voltage (Vdss)View Compare
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ZVN4424ASTOBThrough HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3Obsolete1 (Unlimited)3EAR99MATTE TIN240VMOSFET (Metal Oxide)WIRE260unknown260mA403R-PSIP-W3Not Qualified11750mW TaSingleENHANCEMENT MODE750mW2.5 nsN-ChannelSWITCHING5.5 Ω @ 500mA, 10V1.8V @ 1mA200pF @ 25V260mA Ta5ns2.5V 10V±40V5 ns40 ns260mA40V0.26A6Ohm240VRoHS CompliantLead Free-------------
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Surface MountSurface MountTO-261-4, TO-261AA7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3Active1 (Unlimited)4EAR99Matte Tin (Sn)60VMOSFET (Metal Oxide)GULL WING260-2.1A40-R-PDSO-G4-113W TaSingleENHANCEMENT MODE3W8 nsN-ChannelSWITCHING330m Ω @ 3A, 10V3V @ 1mA350pF @ 25V2.1A Ta25ns5V 10V±20V16 ns30 ns2.1A20V--60VROHS3 CompliantLead Free17 Weeksno330mOhmAVALANCHE RATEDDUALDRAIN1.65mm6.7mm3.7mmNo SVHCNo-
-
-Through HoleE-Line-3---55°C~150°C TJTape & Box (TB)2006e3Active1 (Unlimited)-EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)----------700mW Ta----N-Channel-1 Ω @ 1.5A, 10V3V @ 1mA100pF @ 25V600mA Ta-5V 10V±20V-------ROHS3 Compliant-17 Weeks----------60V
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Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3Obsolete1 (Unlimited)3EAR99MATTE TIN100VMOSFET (Metal Oxide)WIRE260unknown900mA403R-PSIP-W3Not Qualified11850mW TaSingleENHANCEMENT MODE850mW8 nsN-ChannelSWITCHING500m Ω @ 3A, 10V3V @ 1mA350pF @ 25V900mA Ta25ns5V 10V±20V25 ns30 ns900mA20V0.9A0.65Ohm100VRoHS CompliantLead Free------------
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