Diodes Incorporated ZVN2120GTA
- Part Number:
- ZVN2120GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481678-ZVN2120GTA
- Description:
- MOSFET N-CH 200V 320MA SOT223
- ECAD Model:
-
- Datasheet:
- ZVN2120GTA
Diodes Incorporated ZVN2120GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN2120GTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance10Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating320mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Case ConnectionDRAIN
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10 Ω @ 250mA, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds85pF @ 25V
- Current - Continuous Drain (Id) @ 25°C320mA Ta
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)320mA
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.32A
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)2A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN2120GTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 85pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 320mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.32A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
ZVN2120GTA Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a threshold voltage of 1V
ZVN2120GTA Applications
There are a lot of Diodes Incorporated
ZVN2120GTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 85pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 320mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.32A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 2A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
ZVN2120GTA Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 2A.
a threshold voltage of 1V
ZVN2120GTA Applications
There are a lot of Diodes Incorporated
ZVN2120GTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZVN2120GTA More Descriptions
Trans MOSFET N-CH 200V 0.32A Automotive 4-Pin(3 Tab) SOT-223 T/R
N-Channel 200 V 10 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-223
MOSFET, N CH, 200V, 0.32A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 320mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
N-Channel 200 V 10 Ohm Surface Mount Enhancement Mode Vertical DMOS FET-SOT-223
MOSFET, N CH, 200V, 0.32A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 320mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
The three parts on the right have similar specifications to ZVN2120GTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFeedback Cap-Max (Crss)Reach Compliance CodeJESD-30 CodeQualification StatusConfigurationDrain-source On Resistance-MaxView Compare
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ZVN2120GTA17 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR9910OhmMatte Tin (Sn)FET General Purpose Powers200VMOSFET (Metal Oxide)DUALGULL WING260320mA404112W TaSingleENHANCEMENT MODE2WDRAIN8 nsN-ChannelSWITCHING10 Ω @ 250mA, 10V3V @ 1mA85pF @ 25V320mA Ta8ns10V±20V12 ns20 ns320mA1V20V0.32A200V2A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free------- -
17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2006e3yesActive1 (Unlimited)3EAR992OhmMatte Tin (Sn)FET General Purpose Powers60VMOSFET (Metal Oxide)BOTTOMWIRE260450mA40311700mW TaSingleENHANCEMENT MODE700mW--N-Channel-2 Ω @ 1A, 10V2.4V @ 1mA75pF @ 18V450mA Ta-10V±20V--450mA2.4V20V0.45A60V-4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free20 pF-----
-
-Through HoleThrough HoleE-Line-3-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99-MATTE TIN-200VMOSFET (Metal Oxide)-WIRE260180mA40311700mW TaSingleENHANCEMENT MODE700mW-8 nsN-ChannelSWITCHING10 Ω @ 250mA, 10V3V @ 1mA85pF @ 25V180mA Ta8ns10V±20V8 ns20 ns180mA-20V-200V------RoHS CompliantLead Free-unknownR-PSIP-W3Not Qualified--
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)4EAR99-MATTE TIN-60VMOSFET (Metal Oxide)DUALGULL WING260710mA404112W Ta-ENHANCEMENT MODE2WDRAIN7 nsN-ChannelSWITCHING2 Ω @ 1A, 10V2.4V @ 1mA75pF @ 18V710mA Ta8ns10V±20V15 ns12 ns710mA-20V-60V8A1.65mm6.7mm3.7mm--RoHS CompliantLead Free-unknownR-PDSO-G4Not QualifiedSINGLE2Ohm
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