Diodes Incorporated ZVN2110ASTOA
- Part Number:
- ZVN2110ASTOA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3071148-ZVN2110ASTOA
- Description:
- MOSFET N-CH 100V 320MA TO92-3
- Datasheet:
- ZVN2110ASTOA
Diodes Incorporated ZVN2110ASTOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN2110ASTOA.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating230mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation700mW
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4 Ω @ 1A, 10V
- Vgs(th) (Max) @ Id2.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds75pF @ 25V
- Current - Continuous Drain (Id) @ 25°C320mA Ta
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)320mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.32A
- Drain-source On Resistance-Max4Ohm
- Drain to Source Breakdown Voltage100V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVN2110ASTOA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 75pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 320mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.32A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 13 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
ZVN2110ASTOA Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
ZVN2110ASTOA Applications
There are a lot of Diodes Incorporated
ZVN2110ASTOA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 75pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 320mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.32A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 13 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
ZVN2110ASTOA Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
ZVN2110ASTOA Applications
There are a lot of Diodes Incorporated
ZVN2110ASTOA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZVN2110ASTOA More Descriptions
MOSFET N-CH 100V 320MA TO92-3
Compliant Through Hole 453.59237 mg 8 ns Lead Free Bulk 8 ns 4 Ω
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Small Signal Field-Effect Transistors
Compliant Through Hole 453.59237 mg 8 ns Lead Free Bulk 8 ns 4 Ω
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Small Signal Field-Effect Transistors
The three parts on the right have similar specifications to ZVN2110ASTOA.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusLead FreeFactory Lead TimeNumber of PinsPbfree CodeHeightLengthWidthREACH SVHCRadiation HardeningResistanceSubcategoryTerminal PositionThreshold VoltageFeedback Cap-Max (Crss)View Compare
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ZVN2110ASTOAThrough HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN100VMOSFET (Metal Oxide)WIRE260unknown230mA403R-PSIP-W3Not Qualified11700mW TaSingleENHANCEMENT MODE700mW7 nsN-ChannelSWITCHING4 Ω @ 1A, 10V2.4V @ 1mA75pF @ 25V320mA Ta8ns10V±20V8 ns13 ns320mA20V0.32A4Ohm100VRoHS CompliantLead Free--------------
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Through HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Box (TB)2006e3Active1 (Unlimited)3EAR99Matte Tin (Sn)100VMOSFET (Metal Oxide)WIRE260-230mA403--11700mW TaSingleENHANCEMENT MODE700mW7 nsN-ChannelSWITCHING4 Ω @ 1A, 10V2.4V @ 1mA75pF @ 25V320mA Ta8ns10V±20V8 ns13 ns320mA20V-4Ohm100VROHS3 CompliantLead Free17 Weeks3yes4.01mm4.77mm2.41mmNo SVHCNo-----
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Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)453.59237mgSILICON-55°C~150°C TJBulk2006e3Active1 (Unlimited)3EAR99Matte Tin (Sn)60VMOSFET (Metal Oxide)WIRE260-450mA403--11700mW TaSingleENHANCEMENT MODE700mW-N-Channel-2 Ω @ 1A, 10V2.4V @ 1mA75pF @ 18V450mA Ta-10V±20V--450mA20V0.45A-60VROHS3 CompliantLead Free17 Weeks3yes4.01mm4.77mm2.41mmNo SVHCNo2OhmFET General Purpose PowersBOTTOM2.4V20 pF
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Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)453.59237mgSILICON-55°C~150°C TJBulk2012e3Active1 (Unlimited)3EAR99Matte Tin (Sn)100VMOSFET (Metal Oxide)WIRE260-230mA403--11700mW TaSingleENHANCEMENT MODE700mW7 nsN-Channel-4 Ω @ 1A, 10V2.4V @ 1mA75pF @ 25V320mA Ta8ns10V±20V8 ns13 ns320mA20V--100VROHS3 CompliantLead Free17 Weeks3yes4.01mm4.77mm2.41mmNo SVHCNo4OhmFET General Purpose Powers-2.4V8 pF
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