ZVN2110ASTOA

Diodes Incorporated ZVN2110ASTOA

Part Number:
ZVN2110ASTOA
Manufacturer:
Diodes Incorporated
Ventron No:
3071148-ZVN2110ASTOA
Description:
MOSFET N-CH 100V 320MA TO92-3
ECAD Model:
Datasheet:
ZVN2110ASTOA

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Specifications
Diodes Incorporated ZVN2110ASTOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN2110ASTOA.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    E-Line-3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Current Rating
    230mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-W3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    700mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    700mW
  • Turn On Delay Time
    7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4 Ω @ 1A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    75pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    320mA Ta
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    320mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.32A
  • Drain-source On Resistance-Max
    4Ohm
  • Drain to Source Breakdown Voltage
    100V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
ZVN2110ASTOA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 75pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 320mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.32A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 13 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.

ZVN2110ASTOA Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns


ZVN2110ASTOA Applications
There are a lot of Diodes Incorporated
ZVN2110ASTOA applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZVN2110ASTOA More Descriptions
MOSFET N-CH 100V 320MA TO92-3
Compliant Through Hole 453.59237 mg 8 ns Lead Free Bulk 8 ns 4 Ω
Small Signal Field-Effect Transistor, 0.32A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Small Signal Field-Effect Transistors
Product Comparison
The three parts on the right have similar specifications to ZVN2110ASTOA.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Factory Lead Time
    Number of Pins
    Pbfree Code
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Resistance
    Subcategory
    Terminal Position
    Threshold Voltage
    Feedback Cap-Max (Crss)
    View Compare
  • ZVN2110ASTOA
    ZVN2110ASTOA
    Through Hole
    Through Hole
    E-Line-3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    100V
    MOSFET (Metal Oxide)
    WIRE
    260
    unknown
    230mA
    40
    3
    R-PSIP-W3
    Not Qualified
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    7 ns
    N-Channel
    SWITCHING
    4 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 25V
    320mA Ta
    8ns
    10V
    ±20V
    8 ns
    13 ns
    320mA
    20V
    0.32A
    4Ohm
    100V
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN2110ASTZ
    Through Hole
    Through Hole
    E-Line-3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2006
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    100V
    MOSFET (Metal Oxide)
    WIRE
    260
    -
    230mA
    40
    3
    -
    -
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    7 ns
    N-Channel
    SWITCHING
    4 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 25V
    320mA Ta
    8ns
    10V
    ±20V
    8 ns
    13 ns
    320mA
    20V
    -
    4Ohm
    100V
    ROHS3 Compliant
    Lead Free
    17 Weeks
    3
    yes
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    -
    -
    -
    -
    -
  • ZVN2106A
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    60V
    MOSFET (Metal Oxide)
    WIRE
    260
    -
    450mA
    40
    3
    -
    -
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    -
    N-Channel
    -
    2 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 18V
    450mA Ta
    -
    10V
    ±20V
    -
    -
    450mA
    20V
    0.45A
    -
    60V
    ROHS3 Compliant
    Lead Free
    17 Weeks
    3
    yes
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    2Ohm
    FET General Purpose Powers
    BOTTOM
    2.4V
    20 pF
  • ZVN2110A
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    100V
    MOSFET (Metal Oxide)
    WIRE
    260
    -
    230mA
    40
    3
    -
    -
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    7 ns
    N-Channel
    -
    4 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 25V
    320mA Ta
    8ns
    10V
    ±20V
    8 ns
    13 ns
    320mA
    20V
    -
    -
    100V
    ROHS3 Compliant
    Lead Free
    17 Weeks
    3
    yes
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    4Ohm
    FET General Purpose Powers
    -
    2.4V
    8 pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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