Diodes Incorporated ZVN2106A
- Part Number:
- ZVN2106A
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070101-ZVN2106A
- Description:
- MOSFET N-CH 60V 450MA TO92-3
- Datasheet:
- ZVN2106A
Diodes Incorporated ZVN2106A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN2106A.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance2Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating450mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max700mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation700mW
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2 Ω @ 1A, 10V
- Vgs(th) (Max) @ Id2.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds75pF @ 18V
- Current - Continuous Drain (Id) @ 25°C450mA Ta
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)450mA
- Threshold Voltage2.4V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.45A
- Drain to Source Breakdown Voltage60V
- Feedback Cap-Max (Crss)20 pF
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN2106A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 75pF @ 18V.This device has a continuous drain current (ID) of [450mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.45A.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.4V.Its overall power consumption can be reduced by using drive voltage (10V).
ZVN2106A Features
a continuous drain current (ID) of 450mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.4V
ZVN2106A Applications
There are a lot of Diodes Incorporated
ZVN2106A applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 75pF @ 18V.This device has a continuous drain current (ID) of [450mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.45A.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.4V.Its overall power consumption can be reduced by using drive voltage (10V).
ZVN2106A Features
a continuous drain current (ID) of 450mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.4V
ZVN2106A Applications
There are a lot of Diodes Incorporated
ZVN2106A applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
ZVN2106A More Descriptions
N-Channel 60 V 2 Ohm Enhancement Mode Vertical DMOS FET- TO-92
Trans MOSFET N-CH 60V 0.45A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
Transistor NPN 20V 1.25A SOT323 | Diodes Inc ZVN2106A
MOSFET, N, 60V, 0.45A, E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 450mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power D
Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Trans MOSFET N-CH 60V 0.45A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
Transistor NPN 20V 1.25A SOT323 | Diodes Inc ZVN2106A
MOSFET, N, 60V, 0.45A, E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 450mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power D
Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
The three parts on the right have similar specifications to ZVN2106A.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeDrain-source On Resistance-MaxReach Compliance CodeJESD-30 CodeQualification StatusView Compare
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ZVN2106A17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2006e3yesActive1 (Unlimited)3EAR992OhmMatte Tin (Sn)FET General Purpose Powers60VMOSFET (Metal Oxide)BOTTOMWIRE260450mA40311700mW TaSingleENHANCEMENT MODE700mWN-Channel2 Ω @ 1A, 10V2.4V @ 1mA75pF @ 18V450mA Ta10V±20V450mA2.4V20V0.45A60V20 pF4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free----------
-
17 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~150°C TJTape & Box (TB)2006e3yesActive1 (Unlimited)3EAR99-Matte Tin (Sn)-100VMOSFET (Metal Oxide)-WIRE260230mA40311700mW TaSingleENHANCEMENT MODE700mWN-Channel4 Ω @ 1A, 10V2.4V @ 1mA75pF @ 25V320mA Ta10V±20V320mA-20V-100V-4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free7 nsSWITCHING8ns8 ns13 ns4Ohm---
-
-Through HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)-453.59237mgSILICON-55°C~150°C TJBulk-e3-Obsolete1 (Unlimited)3EAR99-MATTE TINFET General Purpose Power200VMOSFET (Metal Oxide)BOTTOMWIRE260180mA40311700mW TaSingleENHANCEMENT MODE700mWN-Channel10 Ω @ 250mA, 10V3V @ 1mA85pF @ 25V180mA Ta10V±20V180mA-20V-200V7 pF-----RoHS CompliantLead Free8 nsSWITCHING8ns8 ns20 ns-unknownO-PBCY-W3Not Qualified
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17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2012e3yesActive1 (Unlimited)3EAR994OhmMatte Tin (Sn)FET General Purpose Powers100VMOSFET (Metal Oxide)-WIRE260230mA40311700mW TaSingleENHANCEMENT MODE700mWN-Channel4 Ω @ 1A, 10V2.4V @ 1mA75pF @ 25V320mA Ta10V±20V320mA2.4V20V-100V8 pF4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free7 ns-8ns8 ns13 ns----
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