ZVN2106A

Diodes Incorporated ZVN2106A

Part Number:
ZVN2106A
Manufacturer:
Diodes Incorporated
Ventron No:
3070101-ZVN2106A
Description:
MOSFET N-CH 60V 450MA TO92-3
ECAD Model:
Datasheet:
ZVN2106A

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Specifications
Diodes Incorporated ZVN2106A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN2106A.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    2Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    450mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    700mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    700mW
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2 Ω @ 1A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    75pF @ 18V
  • Current - Continuous Drain (Id) @ 25°C
    450mA Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    450mA
  • Threshold Voltage
    2.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.45A
  • Drain to Source Breakdown Voltage
    60V
  • Feedback Cap-Max (Crss)
    20 pF
  • Height
    4.01mm
  • Length
    4.77mm
  • Width
    2.41mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVN2106A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 75pF @ 18V.This device has a continuous drain current (ID) of [450mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 0.45A.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.4V.Its overall power consumption can be reduced by using drive voltage (10V).

ZVN2106A Features
a continuous drain current (ID) of 450mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.4V


ZVN2106A Applications
There are a lot of Diodes Incorporated
ZVN2106A applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
ZVN2106A More Descriptions
N-Channel 60 V 2 Ohm Enhancement Mode Vertical DMOS FET- TO-92
Trans MOSFET N-CH 60V 0.45A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
Transistor NPN 20V 1.25A SOT323 | Diodes Inc ZVN2106A
MOSFET, N, 60V, 0.45A, E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 450mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power D
Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to ZVN2106A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Drain-source On Resistance-Max
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    View Compare
  • ZVN2106A
    ZVN2106A
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    2Ohm
    Matte Tin (Sn)
    FET General Purpose Powers
    60V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    450mA
    40
    3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    N-Channel
    2 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 18V
    450mA Ta
    10V
    ±20V
    450mA
    2.4V
    20V
    0.45A
    60V
    20 pF
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN2110ASTZ
    17 Weeks
    Through Hole
    Through Hole
    E-Line-3
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    -
    100V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    230mA
    40
    3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    N-Channel
    4 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 25V
    320mA Ta
    10V
    ±20V
    320mA
    -
    20V
    -
    100V
    -
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    7 ns
    SWITCHING
    8ns
    8 ns
    13 ns
    4Ohm
    -
    -
    -
  • ZVN2120A
    -
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    -
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    180mA
    40
    3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    N-Channel
    10 Ω @ 250mA, 10V
    3V @ 1mA
    85pF @ 25V
    180mA Ta
    10V
    ±20V
    180mA
    -
    20V
    -
    200V
    7 pF
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    8 ns
    SWITCHING
    8ns
    8 ns
    20 ns
    -
    unknown
    O-PBCY-W3
    Not Qualified
  • ZVN2110A
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    4Ohm
    Matte Tin (Sn)
    FET General Purpose Powers
    100V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    230mA
    40
    3
    1
    1
    700mW Ta
    Single
    ENHANCEMENT MODE
    700mW
    N-Channel
    4 Ω @ 1A, 10V
    2.4V @ 1mA
    75pF @ 25V
    320mA Ta
    10V
    ±20V
    320mA
    2.4V
    20V
    -
    100V
    8 pF
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    7 ns
    -
    8ns
    8 ns
    13 ns
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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