Diodes Incorporated VN10LFTA
- Part Number:
- VN10LFTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478046-VN10LFTA
- Description:
- MOSFET N-CH 60V 150MA SOT23-3
- Datasheet:
- VN10LFTC
Diodes Incorporated VN10LFTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated VN10LFTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance5Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating150mA
- Time@Peak Reflow Temperature-Max (s)40
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max330mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation330mW
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Current - Continuous Drain (Id) @ 25°C150mA Ta
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)150mA
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Dual Supply Voltage60V
- Nominal Vgs2.5 V
- Feedback Cap-Max (Crss)5 pF
- Height1mm
- Length3.05mm
- Width3.05mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
VN10LFTA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
VN10LFTA Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.5V
VN10LFTA Applications
There are a lot of Diodes Incorporated
VN10LFTA applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
VN10LFTA Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.5V
VN10LFTA Applications
There are a lot of Diodes Incorporated
VN10LFTA applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
VN10LFTA More Descriptions
VN10LF Series 60 V 5 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23
Trans MOSFET N-CH 60V 0.15A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 60V 0.15A SOT23 | Diodes Inc VN10LFTA
MOSFET, N SOT-23 REEL 3K; Transistor Polarity:N; Max Current Id:150mA; Max Voltage Vds:60V; On State Resistance:5ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:0.33W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:0.15A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Max Power Dissipation Ptot:0.33W; Max Voltage Vgs th:2.5V; No. of Transistors:1; Power Dissipation Pd:0.33W; Pulse Current Idm:3A; Reel Quantity:3000; SMD Marking:MY; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:60V; Typ Voltage Vgs th:2.5V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 60V 0.15A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 60V 0.15A SOT23 | Diodes Inc VN10LFTA
MOSFET, N SOT-23 REEL 3K; Transistor Polarity:N; Max Current Id:150mA; Max Voltage Vds:60V; On State Resistance:5ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:0.33W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:0.15A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Max Power Dissipation Ptot:0.33W; Max Voltage Vgs th:2.5V; No. of Transistors:1; Power Dissipation Pd:0.33W; Pulse Current Idm:3A; Reel Quantity:3000; SMD Marking:MY; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:60V; Typ Voltage Vgs th:2.5V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to VN10LFTA.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRoHS StatusLead FreeJESD-30 CodeTransistor ApplicationDrain-source On Resistance-MaxDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinRadiation HardeningView Compare
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VN10LFTA17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)1997e3yesActive1 (Unlimited)3SMD/SMTEAR995OhmMatte Tin (Sn)FET General Purpose Powers60VMOSFET (Metal Oxide)DUALGULL WING260150mA40Not Qualified11330mW TaSingleENHANCEMENT MODE330mWN-Channel5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V150mA Ta5V 10V±20V150mA2.5V20V60V60V2.5 V5 pF1mm3.05mm3.05mmNo SVHCROHS3 CompliantLead Free-------
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6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-453.59237mgSILICON-55°C~150°C TJTape & Box (TB)2013--Active1 (Unlimited)3-EAR99--FET General Purpose Power-MOSFET (Metal Oxide)BOTTOM-NOT SPECIFIED-NOT SPECIFIED-111W TcSingleENHANCEMENT MODE-N-Channel5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V310mA Tj5V 10V±30V310mA-30V60V--5 pF5.33mm5.21mm4.19mm-ROHS3 Compliant-O-PBCY-T3SWITCHING5Ohm---
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6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2013--Active1 (Unlimited)3-EAR99--FET General Purpose Power-MOSFET (Metal Oxide)BOTTOM-NOT SPECIFIED-NOT SPECIFIED-111W TcSingleENHANCEMENT MODE1WN-Channel5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V310mA Tj5V 10V±30V310mA-30V---5 pF5.33mm5.21mm4.19mm-ROHS3 Compliant--SWITCHING5Ohm60V60V-
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6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3219.992299mgSILICON-55°C~150°C TJBulk2013e3-Active1 (Unlimited)3-EAR99-Matte Tin (Sn)FET General Purpose Power-MOSFET (Metal Oxide)BOTTOM-----111W TcSingleENHANCEMENT MODE1WN-Channel5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V310mA Tj5V 10V±30V310mA-30V60V--5 pF5.33mm5.21mm4.19mm-ROHS3 Compliant--SWITCHING5Ohm--No
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