VN10LFTA

Diodes Incorporated VN10LFTA

Part Number:
VN10LFTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478046-VN10LFTA
Description:
MOSFET N-CH 60V 150MA SOT23-3
ECAD Model:
Datasheet:
VN10LFTC

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Specifications
Diodes Incorporated VN10LFTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated VN10LFTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    5Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    150mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    330mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    330mW
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    60pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    150mA Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    150mA
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Dual Supply Voltage
    60V
  • Nominal Vgs
    2.5 V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1mm
  • Length
    3.05mm
  • Width
    3.05mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
VN10LFTA Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.5V.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

VN10LFTA Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.5V


VN10LFTA Applications
There are a lot of Diodes Incorporated
VN10LFTA applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
VN10LFTA More Descriptions
VN10LF Series 60 V 5 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23
Trans MOSFET N-CH 60V 0.15A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 60V 0.15A SOT23 | Diodes Inc VN10LFTA
MOSFET, N SOT-23 REEL 3K; Transistor Polarity:N; Max Current Id:150mA; Max Voltage Vds:60V; On State Resistance:5ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:0.33W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:0.15A; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; Max Power Dissipation Ptot:0.33W; Max Voltage Vgs th:2.5V; No. of Transistors:1; Power Dissipation Pd:0.33W; Pulse Current Idm:3A; Reel Quantity:3000; SMD Marking:MY; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:60V; Typ Voltage Vgs th:2.5V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to VN10LFTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    JESD-30 Code
    Transistor Application
    Drain-source On Resistance-Max
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Radiation Hardening
    View Compare
  • VN10LFTA
    VN10LFTA
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    1997
    e3
    yes
    Active
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    5Ohm
    Matte Tin (Sn)
    FET General Purpose Powers
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    150mA
    40
    Not Qualified
    1
    1
    330mW Ta
    Single
    ENHANCEMENT MODE
    330mW
    N-Channel
    5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    150mA Ta
    5V 10V
    ±20V
    150mA
    2.5V
    20V
    60V
    60V
    2.5 V
    5 pF
    1mm
    3.05mm
    3.05mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • VN10KN3-G-P013
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2013
    -
    -
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    1
    1
    1W Tc
    Single
    ENHANCEMENT MODE
    -
    N-Channel
    5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    310mA Tj
    5V 10V
    ±30V
    310mA
    -
    30V
    60V
    -
    -
    5 pF
    5.33mm
    5.21mm
    4.19mm
    -
    ROHS3 Compliant
    -
    O-PBCY-T3
    SWITCHING
    5Ohm
    -
    -
    -
  • VN10KN3-G-P003
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    -
    -
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    1
    1
    1W Tc
    Single
    ENHANCEMENT MODE
    1W
    N-Channel
    5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    310mA Tj
    5V 10V
    ±30V
    310mA
    -
    30V
    -
    -
    -
    5 pF
    5.33mm
    5.21mm
    4.19mm
    -
    ROHS3 Compliant
    -
    -
    SWITCHING
    5Ohm
    60V
    60V
    -
  • VN10KN3-G
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    219.992299mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2013
    e3
    -
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    -
    -
    -
    -
    1
    1
    1W Tc
    Single
    ENHANCEMENT MODE
    1W
    N-Channel
    5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    310mA Tj
    5V 10V
    ±30V
    310mA
    -
    30V
    60V
    -
    -
    5 pF
    5.33mm
    5.21mm
    4.19mm
    -
    ROHS3 Compliant
    -
    -
    SWITCHING
    5Ohm
    -
    -
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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