VN10LP

Diodes Incorporated VN10LP

Part Number:
VN10LP
Manufacturer:
Diodes Incorporated
Ventron No:
3585960-VN10LP
Description:
MOSFET N-CH 60V 270MA TO92-3
ECAD Model:
Datasheet:
VN10LP

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Specifications
Diodes Incorporated VN10LP technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated VN10LP.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    5Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    270mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Lead Pitch
    1.27mm
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    625mW
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    60pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    270mA Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    270mA
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.27A
  • Drain to Source Breakdown Voltage
    60V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    4.01mm
  • Length
    4.77mm
  • Width
    2.41mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
VN10LP Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 60pF @ 25V.This device conducts a continuous drain current (ID) of 270mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.27A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

VN10LP Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.5V


VN10LP Applications
There are a lot of Diodes Incorporated
VN10LP applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
VN10LP More Descriptions
DIODES INC./ZETEX VN10LP / MOSFET N-CH 60V 270MA TO-92 ZE
N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92
MOSFET, N E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 270mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation
Product Comparison
The three parts on the right have similar specifications to VN10LP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Lead Pitch
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-30 Code
    Transistor Application
    Drain-source On Resistance-Max
    Reach Compliance Code
    Qualification Status
    View Compare
  • VN10LP
    VN10LP
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    5Ohm
    Matte Tin (Sn)
    FET General Purpose Powers
    60V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    270mA
    40
    3
    1.27mm
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    N-Channel
    5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    270mA Ta
    5V 10V
    ±20V
    270mA
    2.5V
    20V
    0.27A
    60V
    5 pF
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • VN10KN3-G-P013
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    2013
    -
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    1
    1
    1W Tc
    Single
    ENHANCEMENT MODE
    -
    N-Channel
    5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    310mA Tj
    5V 10V
    ±30V
    310mA
    -
    30V
    -
    60V
    5 pF
    5.33mm
    5.21mm
    4.19mm
    -
    -
    ROHS3 Compliant
    -
    O-PBCY-T3
    SWITCHING
    5Ohm
    -
    -
  • VN10LFTC
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MATTE TIN
    -
    60V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    150mA
    40
    -
    -
    1
    1
    330mW Ta
    Single
    ENHANCEMENT MODE
    330mW
    N-Channel
    5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    150mA Ta
    5V 10V
    ±20V
    150mA
    -
    20V
    -
    60V
    5 pF
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    Lead Free
    R-PDSO-G3
    -
    5Ohm
    unknown
    Not Qualified
  • VN10KN3-G-P002
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    -
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    1
    1
    1W Tc
    Single
    ENHANCEMENT MODE
    -
    N-Channel
    5 Ω @ 500mA, 10V
    2.5V @ 1mA
    60pF @ 25V
    310mA Tj
    5V 10V
    ±30V
    310mA
    -
    30V
    -
    60V
    5 pF
    5.33mm
    5.21mm
    4.19mm
    -
    -
    ROHS3 Compliant
    -
    O-PBCY-T3
    SWITCHING
    5Ohm
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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