Diodes Incorporated VN10LP
- Part Number:
- VN10LP
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585960-VN10LP
- Description:
- MOSFET N-CH 60V 270MA TO92-3
- Datasheet:
- VN10LP
Diodes Incorporated VN10LP technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated VN10LP.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance5Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating270mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Lead Pitch1.27mm
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation625mW
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Current - Continuous Drain (Id) @ 25°C270mA Ta
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)270mA
- Threshold Voltage2.5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.27A
- Drain to Source Breakdown Voltage60V
- Feedback Cap-Max (Crss)5 pF
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
VN10LP Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 60pF @ 25V.This device conducts a continuous drain current (ID) of 270mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.27A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
VN10LP Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.5V
VN10LP Applications
There are a lot of Diodes Incorporated
VN10LP applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 60pF @ 25V.This device conducts a continuous drain current (ID) of 270mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.27A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2.5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
VN10LP Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2.5V
VN10LP Applications
There are a lot of Diodes Incorporated
VN10LP applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
VN10LP More Descriptions
DIODES INC./ZETEX VN10LP / MOSFET N-CH 60V 270MA TO-92 ZE
N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92
MOSFET, N E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 270mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation
N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92
MOSFET, N E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 270mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation
The three parts on the right have similar specifications to VN10LP.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountLead PitchNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodeTransistor ApplicationDrain-source On Resistance-MaxReach Compliance CodeQualification StatusView Compare
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VN10LP17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2006e3yesActive1 (Unlimited)3EAR995OhmMatte Tin (Sn)FET General Purpose Powers60VMOSFET (Metal Oxide)BOTTOMWIRE260270mA4031.27mm11625mW TaSingleENHANCEMENT MODE625mWN-Channel5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V270mA Ta5V 10V±20V270mA2.5V20V0.27A60V5 pF4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free------
-
6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-453.59237mgSILICON-55°C~150°C TJTape & Box (TB)2013--Active1 (Unlimited)3EAR99--FET General Purpose Power-MOSFET (Metal Oxide)BOTTOM-NOT SPECIFIED-NOT SPECIFIED--111W TcSingleENHANCEMENT MODE-N-Channel5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V310mA Tj5V 10V±30V310mA-30V-60V5 pF5.33mm5.21mm4.19mm--ROHS3 Compliant-O-PBCY-T3SWITCHING5Ohm--
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)3EAR99-MATTE TIN-60VMOSFET (Metal Oxide)DUALGULL WING260150mA40--11330mW TaSingleENHANCEMENT MODE330mWN-Channel5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V150mA Ta5V 10V±20V150mA-20V-60V5 pF---No SVHC-RoHS CompliantLead FreeR-PDSO-G3-5OhmunknownNot Qualified
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6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2013--Active1 (Unlimited)3EAR99--FET General Purpose Power-MOSFET (Metal Oxide)BOTTOM-NOT SPECIFIED-NOT SPECIFIED--111W TcSingleENHANCEMENT MODE-N-Channel5 Ω @ 500mA, 10V2.5V @ 1mA60pF @ 25V310mA Tj5V 10V±30V310mA-30V-60V5 pF5.33mm5.21mm4.19mm--ROHS3 Compliant-O-PBCY-T3SWITCHING5Ohm--
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