Bourns Inc. TIP36A-S
- Part Number:
- TIP36A-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2470452-TIP36A-S
- Description:
- TRANS PNP 60V 25A
- Datasheet:
- TIP36 Series
Bourns Inc. TIP36A-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. TIP36A-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-218-3
- Number of Pins3
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published1993
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryOther Transistors
- Max Power Dissipation3.5W
- Reach Compliance Codeunknown
- Base Part NumberTIP36
- Number of Elements1
- ConfigurationSingle
- Power Dissipation125W
- Power - Max3.5W
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)4V
- Max Collector Current25A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 15A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic4V @ 5A, 25A
- Collector Emitter Breakdown Voltage60V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusROHS3 Compliant
TIP36A-S Overview
In this device, the DC current gain is 10 @ 15A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 5A, 25A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.
TIP36A-S Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
TIP36A-S Applications
There are a lot of Bourns Inc.
TIP36A-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 15A 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 5A, 25A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.
TIP36A-S Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
TIP36A-S Applications
There are a lot of Bourns Inc.
TIP36A-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP36A-S More Descriptions
Trans GP BJT PNP 60V 25A 3-Pin(3 Tab) SOT-93
PNP TRANSISTOR 60V 25A
PNP TRANSISTOR 60V 25A
The three parts on the right have similar specifications to TIP36A-S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationReach Compliance CodeBase Part NumberNumber of ElementsConfigurationPower DissipationPower - MaxPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusTransistor ApplicationJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingWeightECCN CodeVoltage - Rated DCCurrent RatingFrequencyElement ConfigurationCase ConnectionGain Bandwidth ProductCollector Emitter Saturation VoltagehFE MinHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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TIP36A-SThrough HoleThrough HoleTO-218-33-65°C~150°C TJTube1993Obsolete1 (Unlimited)Other Transistors3.5WunknownTIP361Single125W3.5WPNPPNP4V25A10 @ 15A 4V1mA4V @ 5A, 25A60V100V5VROHS3 Compliant----------------------------------------------------
-
-Through HoleTO-220-3-150°C TJTube-Obsolete1 (Unlimited)----1SINGLE-2WNPNNPN--10 @ 3A 4V300μA1.2V @ 375mA, 3A---ROHS3 CompliantNOSILICONe3yes3MATTE TINSINGLENOT APPLICABLENOT APPLICABLE3R-PSFM-T3COMMERCIALSWITCHINGTO-220AB60V3A3MHz3MHz---------------------------------
-
----------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A-------------------
-
-Through HoleTO-220-33-65°C~150°C TJTube2005Active1 (Unlimited)Other Transistors2W-TIP311-2W-NPNNPN100V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A100V100V5VROHS3 CompliantNOSILICONe3yes3--260403--SWITCHINGTO-220AB--3MHz---------------ACTIVE (Last Updated: 3 days ago)8 WeeksTin4.535924gEAR99100V3A3MHzSingleCOLLECTOR3MHz1.2V259.28mm10.28mm4.82mmNo SVHCNoLead Free
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