ON Semiconductor TIP35CG
- Part Number:
- TIP35CG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846086-TIP35CG
- Description:
- TRANS NPN 100V 25A TO247
- Datasheet:
- TIP35CG
ON Semiconductor TIP35CG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP35CG.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation125W
- Peak Reflow Temperature (Cel)260
- Current Rating25A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation125W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current25A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 15A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic4V @ 5A, 25A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.8V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height20.3454mm
- Length15.2146mm
- Width4.9022mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP35CG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 15A 4V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.When VCE saturation is 4V @ 5A, 25A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 25A.In the part, the transition frequency is 3MHz.A maximum collector current of 25A volts can be achieved.
TIP35CG Features
the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 25A
a transition frequency of 3MHz
TIP35CG Applications
There are a lot of ON Semiconductor
TIP35CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 15A 4V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.When VCE saturation is 4V @ 5A, 25A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 25A.In the part, the transition frequency is 3MHz.A maximum collector current of 25A volts can be achieved.
TIP35CG Features
the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 25A
a transition frequency of 3MHz
TIP35CG Applications
There are a lot of ON Semiconductor
TIP35CG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP35CG More Descriptions
25 A, 100 V NPN Bipolar Power Transistor
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 100V 25A 125000mW 3-Pin(3 Tab) TO-247 Tube
ON SEMICONDUCTOR TIP35CG RF TRANSISTOR, NPN 100V 3MHZ TO-247
TRANSISTOR, BIPOL, NPN, 100V, TO-218-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 125W; DC Collector Current: -25A; DC Current Gain hFE: 15hFE; Tr
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 100V 25A 125000mW 3-Pin(3 Tab) TO-247 Tube
ON SEMICONDUCTOR TIP35CG RF TRANSISTOR, NPN 100V 3MHZ TO-247
TRANSISTOR, BIPOL, NPN, 100V, TO-218-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 125W; DC Collector Current: -25A; DC Current Gain hFE: 15hFE; Tr
The three parts on the right have similar specifications to TIP35CG.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountBase Part NumberJEDEC-95 CodeMax Breakdown VoltageVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP35CGACTIVE (Last Updated: 4 days ago)4 WeeksThrough HoleTO-247-3NO34.535924gSILICON-65°C~150°C TJTube2002e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors100V125W26025A3MHz4031Single125WCOLLECTORSWITCHING3MHzNPNNPN100V25A15 @ 15A 4V1mA4V @ 5A, 25A100V3MHz1.8V100V5V2520.3454mm15.2146mm4.9022mmNo SVHCNoROHS3 CompliantLead Free-------------------
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LAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough HoleTO-220-3-31.214gSILICON150°C TJTube2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors100V2W-3A3MHz--1Single2W-SWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A100V3MHz-100V5V106.35mm6.35mm6.35mmNo SVHCNoRoHS CompliantLead FreeThrough HoleTIP31TO-220AB100V--------------
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--------------------------------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A
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--------------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A
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