Central Semiconductor Corp TIP35C SL
- Part Number:
- TIP35C SL
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2470760-TIP35C SL
- Description:
- TRANS GENERAL PURPOSE TO-218
- Datasheet:
- TIP35C SL
Central Semiconductor Corp TIP35C SL technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp TIP35C SL.
- Mounting TypeThrough Hole
- Package / CaseTO-218-3
- Operating Temperature-65°C~150°C TJ
- PackagingBulk
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max125W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 15A 4V
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)25A
- Frequency - Transition3MHz
TIP35C SL Overview
In this device, the DC current gain is 10 @ 15A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The device exhibits a collector-emitter breakdown at 100V.
TIP35C SL Features
the DC current gain for this device is 10 @ 15A 4V
TIP35C SL Applications
There are a lot of Central Semiconductor Corp
TIP35C SL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 15A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The device exhibits a collector-emitter breakdown at 100V.
TIP35C SL Features
the DC current gain for this device is 10 @ 15A 4V
TIP35C SL Applications
There are a lot of Central Semiconductor Corp
TIP35C SL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP35C SL More Descriptions
TRANS GENERAL PURPOSE TO-218
The three parts on the right have similar specifications to TIP35C SL.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionLifecycle StatusFactory Lead TimeMountNumber of PinsWeightTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
-
TIP35C SLThrough HoleTO-218-3-65°C~150°C TJBulkObsolete1 (Unlimited)125WNPN10 @ 15A 4V100V25A3MHz---------------------------------------------------------
-
Through HoleTO-220-3150°C TJTubeObsolete1 (Unlimited)-NPN10 @ 3A 4V---LAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough Hole31.214gSILICON2013e3yes3EAR99Tin (Sn)Other Transistors100V2W3A3MHzTIP311Single2WSWITCHING3MHzNPN100V3A300μATO-220AB1.2V @ 375mA, 3A100V3MHz100V100V5V106.35mm6.35mm6.35mmNo SVHCNoRoHS CompliantLead Free--------------
-
------------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A
-
------------------------------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A
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