STMicroelectronics TIP33C
- Part Number:
- TIP33C
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465864-TIP33C
- Description:
- TRANS NPN 100V 10A TO-247
- Datasheet:
- TIP33C
STMicroelectronics TIP33C technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP33C.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC140V
- Max Power Dissipation80W
- Current Rating10A
- Frequency3MHz
- Base Part NumberTIP33
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation80W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 3A 4V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic4V @ 2.5A, 10A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- VCEsat-Max4 V
- Height20.15mm
- Length15.75mm
- Width5.15mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP33C Overview
In this device, the DC current gain is 20 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 2.5A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP33C Features
the DC current gain for this device is 20 @ 3A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 10A
a transition frequency of 3MHz
TIP33C Applications
There are a lot of STMicroelectronics
TIP33C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 20 @ 3A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 2.5A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
TIP33C Features
the DC current gain for this device is 20 @ 3A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 10A
a transition frequency of 3MHz
TIP33C Applications
There are a lot of STMicroelectronics
TIP33C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP33C More Descriptions
Transistor NPN Silicon 100V IC=10amp TO-247 Case General Purpose Power AmplifierNTE Electronics
Power Bipolar Transistor,
TRANS NPN 100V 10A TO218
Power Bipolar Transistor,
TRANS NPN 100V 10A TO218
The three parts on the right have similar specifications to TIP33C.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeSurface MountPublishedPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Case ConnectionJEDEC-95 CodeView Compare
-
TIP33CThrough HoleThrough HoleTO-247-334.535924gSILICON150°C TJTubee3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors140V80W10A3MHzTIP3331Single80WSWITCHING3MHzNPNNPN100V10A20 @ 3A 4V700μA4V @ 2.5A, 10A100V3MHz1V140V7V204 V20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free-----------------------
-
------------------------------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-10 @ 3A, 4V300µA3A--------
-
------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A--------
-
-Through HoleTO-220-334.535924gSILICON-65°C~150°C TJTubee3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors40V2W3A3MHzTIP3131Single2WSWITCHING3MHzNPNNPN40V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A40V3MHz1.2V40V5V25-15.748mm10.2616mm4.826mm-NoROHS3 CompliantLead Free--------------ACTIVE (Last Updated: 3 days ago)2 WeeksNO200526040COLLECTORTO-220AB
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