Bourns Inc. TIP31C-S
- Part Number:
- TIP31C-S
- Manufacturer:
- Bourns Inc.
- Ventron No:
- 2469433-TIP31C-S
- Description:
- TRANS NPN 100V 3A
- Datasheet:
- TIP31(A,B,C)
Bourns Inc. TIP31C-S technical specifications, attributes, parameters and parts with similar specifications to Bourns Inc. TIP31C-S.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published1993
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation40W
- Base Part NumberTIP31
- Number of Elements1
- ConfigurationSingle
- Power Dissipation40W
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage100V
- Collector Base Voltage (VCBO)140V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
TIP31C-S Overview
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
TIP31C-S Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
TIP31C-S Applications
There are a lot of Bourns Inc.
TIP31C-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
TIP31C-S Features
the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
TIP31C-S Applications
There are a lot of Bourns Inc.
TIP31C-S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP31C-S More Descriptions
Trans GP BJT NPN 100V 3A 3-Pin(3 Tab) TO-220
NPN TRANSISTOR 100V 3A
NPN TRANSISTOR 100V 3A
The three parts on the right have similar specifications to TIP31C-S.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationBase Part NumberNumber of ElementsConfigurationPower DissipationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Radiation HardeningRoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingSurface MountWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Pin CountElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductJEDEC-95 CodeTransition FrequencyCollector Emitter Saturation VoltagehFE MinHeightLengthWidthREACH SVHCLead FreeView Compare
-
TIP31C-SThrough HoleThrough HoleTO-220-33-65°C~150°C TJTube1993Obsolete1 (Unlimited)EAR99Other Transistors40WTIP311Single40WNPNNPN100V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A100V140V5VNoROHS3 Compliant-------------------------------------------
-
----------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A----------------------------
-
-Through HoleTO-220-33-65°C~150°C TJTube2005Active1 (Unlimited)EAR99Other Transistors2WTIP311-2WNPNNPN100V3A10 @ 3A 4V300μA1.2V @ 375mA, 3A100V100V5VNoROHS3 Compliant--------------ACTIVE (Last Updated: 3 days ago)8 WeeksTinNO4.535924gSILICONe3yes3100V2603A3MHz403SingleCOLLECTORSWITCHING3MHzTO-220AB3MHz1.2V259.28mm10.28mm4.82mmNo SVHCLead Free
-
----------------------------60V1.2V @ 375mA, 3ANPNTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 3A, 4V300µA3A----------------------------
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