ON Semiconductor TIP31AG
- Part Number:
- TIP31AG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463232-TIP31AG
- Description:
- TRANS NPN 60V 3A TO220AB
- Datasheet:
- TIP31AG
ON Semiconductor TIP31AG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor TIP31AG.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Weight45.359237kg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating3A
- Frequency3MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberTIP31
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min25
- Height15.748mm
- Length10.28mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP31AG Description
The TIP31AG is a medium-power NPN bipolar junction transistor that is commonly used. TIP31AG transistor is a three-terminal bipolar junction transistor (BJT) that can be used for amplification or switching. TIP31AG is made up of three parts of semiconductors, each with a different doping pattern. The base is thin, and the emitter and collector are extensively doped on the exterior.
TIP31AG Features
High current gain - bandwidth
60VDC Minimum collector-emitter sustaining voltage (VCEO (sus))
1.2VDC Maximum collector-emitter saturation voltage (VCE (sat))
60VDC Collector to base voltage (VCBO)
5VDC Emitter to base voltage (VEBO)
5ADC Peak collector current
1ADC Base current (IB)
3.125°C/W Thermal resistance, junction to case
62.5°C/W Thermal resistance, junction to ambient
TIP31AG Applications
Industrial
Speed control of Motors
Half-bridge circuits
high current switching (up to 2A) loads
Can be used as medium Power switches
Large signal amplification
Inverter and other rectifier circuits
The TIP31AG is a medium-power NPN bipolar junction transistor that is commonly used. TIP31AG transistor is a three-terminal bipolar junction transistor (BJT) that can be used for amplification or switching. TIP31AG is made up of three parts of semiconductors, each with a different doping pattern. The base is thin, and the emitter and collector are extensively doped on the exterior.
TIP31AG Features
High current gain - bandwidth
60VDC Minimum collector-emitter sustaining voltage (VCEO (sus))
1.2VDC Maximum collector-emitter saturation voltage (VCE (sat))
60VDC Collector to base voltage (VCBO)
5VDC Emitter to base voltage (VEBO)
5ADC Peak collector current
1ADC Base current (IB)
3.125°C/W Thermal resistance, junction to case
62.5°C/W Thermal resistance, junction to ambient
TIP31AG Applications
Industrial
Speed control of Motors
Half-bridge circuits
high current switching (up to 2A) loads
Can be used as medium Power switches
Large signal amplification
Inverter and other rectifier circuits
TIP31AG More Descriptions
Transistor General Purpose BJT NPN 60 Volt 3 Amp 3-Pin 3 Tab TO-220 Ampb Rail
Trans GP BJT NPN 60V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
TIP Series 60 V 3 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 60VDC, IC 3A, PD 40W, TO-220AB, VCBO 60VDC | ON Semiconductor TIP31AG
NPN Bipolar Power Transistor 60 V
60V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA NPN -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 60V, 3A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 40W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Ca
Trans GP BJT NPN 60V 3A 2000mW 3-Pin(3 Tab) TO-220AB Tube
TIP Series 60 V 3 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 60VDC, IC 3A, PD 40W, TO-220AB, VCBO 60VDC | ON Semiconductor TIP31AG
NPN Bipolar Power Transistor 60 V
60V 40W 3A 10@3A4V 3MHz 1.2V@3A375mA NPN -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 60V, 3A, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 40W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Ca
The three parts on the right have similar specifications to TIP31AG.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePolarityPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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TIP31AGACTIVE (Last Updated: 1 day ago)2 WeeksThrough HoleTO-220-3NO345.359237kgSILICON-65°C~150°C TJTube2006e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors60V40W2603A3MHz40TIP3131Single2WCOLLECTORSWITCHING3MHzNPNNPN60V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A60V3MHz1.2V60V5V2515.748mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free------------------------
-
--Through HoleTO-218-3-3---65°C~150°C TJTube1993--Obsolete1 (Unlimited)-----3.5W----TIP34-1-80W----PNP60V10A20 @ 3A 4V700μA-4V @ 2.5A, 10A60V--100V5V------ROHS3 Compliant-Through HoleSOT-93150°C-65°CPNP3.5W60V10A---------------
-
LAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough HoleTO-220-3-31.214gSILICON150°C TJTube2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors100V2W-3A3MHz-TIP31-1Single2W-SWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz-100V5V106.35mm6.35mm6.35mmNo SVHCNoRoHS CompliantLead FreeThrough Hole-------100V--------------
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---------------------------------------------------------------100V-PNPTO-218-125WBulkTO-218-3-65°C ~ 150°C (TJ)Through Hole3MHz10 @ 15A, 4V-25A
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