STMicroelectronics TIP3055
- Part Number:
- TIP3055
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2463272-TIP3055
- Description:
- TRANS NPN 60V 15A TO-247
- Datasheet:
- TIP3055,2955
STMicroelectronics TIP3055 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP3055.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight18.143695g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC100V
- Max Power Dissipation90W
- Current Rating15A
- Frequency3MHz
- Base Part NumberTIP3055
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation90W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A 4V
- Current - Collector Cutoff (Max)700μA
- JEDEC-95 CodeTO-247AD
- Vce Saturation (Max) @ Ib, Ic3V @ 3.3A, 10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage1V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)7V
- hFE Min20
- VCEsat-Max3 V
- Height20.15mm
- Length15.75mm
- Width5.15mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
TIP3055 Description
A complementary power transistor is the TIP3055. The devices are made with epitaxial-base planar technology and can be used in audio, power linear, and switching applications.
TIP3055 Features
■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
■ Collector-emitter saturation voltage is low.
■ NPN and PNP transistors that are complementary
■ Simple criteria for driving
■ The high-risk operating zone
■ Complementary designs with little distortion
■ Carry and manage with ease
TIP3055 Applications
■ General purpose
■ Audio amplifier
■ General-purpose power amplification and switching
■ Switching regulators
■ Converters
■ Power amplifiers
A complementary power transistor is the TIP3055. The devices are made with epitaxial-base planar technology and can be used in audio, power linear, and switching applications.
TIP3055 Features
■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
■ Collector-emitter saturation voltage is low.
■ NPN and PNP transistors that are complementary
■ Simple criteria for driving
■ The high-risk operating zone
■ Complementary designs with little distortion
■ Carry and manage with ease
TIP3055 Applications
■ General purpose
■ Audio amplifier
■ General-purpose power amplification and switching
■ Switching regulators
■ Converters
■ Power amplifiers
TIP3055 More Descriptions
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT Comp NPN - PNP Epitaxial-Base Trans
TIP3055 Series PNP 60 V 15 A Complementary Power Transistor - TO-247
Transistor GP BJT NPN 70V 15A 3-Pin TO-247 Tube - Rail/Tube
TRANSISTOR, DARLINGTON, NPN, 100V 15A TO-247 PKG
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:70V; Dc Collector Current:15A; Power Dissipation Pd:90W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:70Hfe; Msl:- Rohs Compliant: Yes
TRANSISTOR,NPN,100V,15A,TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:70V; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:70; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:15A; Current Ic hFE:4A; Device Marking:TIP3055; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.5MHz; Hfe Min:20; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:90W; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Transistor Type:Bipolar; Voltage Vcbo:100V
Bipolar Transistors - BJT Comp NPN - PNP Epitaxial-Base Trans
TIP3055 Series PNP 60 V 15 A Complementary Power Transistor - TO-247
Transistor GP BJT NPN 70V 15A 3-Pin TO-247 Tube - Rail/Tube
TRANSISTOR, DARLINGTON, NPN, 100V 15A TO-247 PKG
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:70V; Dc Collector Current:15A; Power Dissipation Pd:90W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:70Hfe; Msl:- Rohs Compliant: Yes
TRANSISTOR,NPN,100V,15A,TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:70V; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:70; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:15A; Current Ic hFE:4A; Device Marking:TIP3055; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.5MHz; Hfe Min:20; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Pd:90W; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Transistor Type:Bipolar; Voltage Vcbo:100V
The three parts on the right have similar specifications to TIP3055.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Surface MountPublishedPbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Case ConnectionView Compare
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TIP3055ACTIVE (Last Updated: 8 months ago)8 WeeksTinThrough HoleThrough HoleTO-247-3318.143695gSILICON150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors100V90W15A3MHzTIP305531Single90WSWITCHING3MHzNPNNPN60V15A20 @ 4A 4V700μATO-247AD3V @ 3.3A, 10A60V3MHz1V100V7V203 V20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free----------------------
-
--------------------------------------------------100V700mV @ 125mA, 1APNPTO-220AB-2WTubeTO-220-3-65°C ~ 150°C (TJ)Through Hole3MHz15 @ 1A, 4V300µA1A-------
-
ACTIVE (Last Updated: 3 days ago)2 Weeks--Through HoleTO-220-334.535924gSILICON-65°C~150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors40V2W3A3MHzTIP3131Single2WSWITCHING3MHzNPNNPN40V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A40V3MHz1.2V40V5V25-15.748mm10.2616mm4.826mm-NoROHS3 CompliantLead Free--------------NO2005yesTin (Sn)26040COLLECTOR
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ACTIVE (Last Updated: 3 days ago)8 WeeksTin-Through HoleTO-220-334.535924gSILICON-65°C~150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors100V2W3A3MHzTIP3131Single2WSWITCHING3MHzNPNNPN100V3A10 @ 3A 4V300μATO-220AB1.2V @ 375mA, 3A100V3MHz1.2V100V5V25-9.28mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead Free--------------NO2005yes-26040COLLECTOR
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