SVD5867NLT4G

ON Semiconductor SVD5867NLT4G

Part Number:
SVD5867NLT4G
Manufacturer:
ON Semiconductor
Ventron No:
2480746-SVD5867NLT4G
Description:
MOSFET N-CH 60V 18A DPAK
ECAD Model:
Datasheet:
SVD5867NLT4G

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Specifications
ON Semiconductor SVD5867NLT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SVD5867NLT4G.
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 23 hours ago)
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    not_compliant
  • Power Dissipation-Max
    3.3W Ta 43W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    39m Ω @ 11A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    675pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    22A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
SVD5867NLT4G Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC?Q101 Qualified and PPAP Capable These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
SVD5867NLT4G More Descriptions
Single N-Channel Power MOSFET 60V, 22A, 39mΩ
Trans MOSFET N-CH 60V 6A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET NFET DPAK 60V 18A 43MOHM
MOSFET, N-CH, 60V, 22A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 43W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 22A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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