ON Semiconductor SVD5867NLT4G
- Part Number:
- SVD5867NLT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2480746-SVD5867NLT4G
- Description:
- MOSFET N-CH 60V 18A DPAK
- Datasheet:
- SVD5867NLT4G
ON Semiconductor SVD5867NLT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SVD5867NLT4G.
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 23 hours ago)
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- Power Dissipation-Max3.3W Ta 43W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs39m Ω @ 11A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds675pF @ 25V
- Current - Continuous Drain (Id) @ 25°C22A Tc
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
SVD5867NLT4G Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC?Q101 Qualified and PPAP Capable
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
SVD5867NLT4G More Descriptions
Single N-Channel Power MOSFET 60V, 22A, 39mΩ
Trans MOSFET N-CH 60V 6A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET NFET DPAK 60V 18A 43MOHM
MOSFET, N-CH, 60V, 22A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 43W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 22A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 6A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET NFET DPAK 60V 18A 43MOHM
MOSFET, N-CH, 60V, 22A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 43W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Power Field-Effect Transistor, 22A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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