Vishay Siliconix SUP70N03-09BP-E3
- Part Number:
- SUP70N03-09BP-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3586827-SUP70N03-09BP-E3
- Description:
- MOSFET N-CH 30V 70A TO220AB
- Datasheet:
- SUP70N03-09BP-E3
Vishay Siliconix SUP70N03-09BP-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUP70N03-09BP-E3.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesTrenchFET®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Power Dissipation-Max93W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation93W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C70A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 5V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)50A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)70A
- Drain-source On Resistance-Max0.009Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)200A
- Nominal Vgs800 mV
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
SUP70N03-09BP-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SUP70N03-09BP-E3 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 200A.
SUP70N03-09BP-E3 Applications
There are a lot of Vishay Siliconix
SUP70N03-09BP-E3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
SUP70N03-09BP-E3 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 200A.
SUP70N03-09BP-E3 Applications
There are a lot of Vishay Siliconix
SUP70N03-09BP-E3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SUP70N03-09BP-E3 More Descriptions
Transistor MOSFET N-CH 30V 70A 3-Pin(3 Tab) TO-220AB
N-Channel MOSFETs 30V 70A 93W
30V N-CH, 175DEG.C RATED TRENCH
N-Channel MOSFETs 30V 70A 93W
30V N-CH, 175DEG.C RATED TRENCH
The three parts on the right have similar specifications to SUP70N03-09BP-E3.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsREACH SVHCRadiation HardeningRoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusDrain to Source Voltage (Vdss)Threshold VoltageHeightLengthWidthAvalanche Energy Rating (Eas)WeightResistanceNumber of ChannelsLead FreeView Compare
-
SUP70N03-09BP-E3Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeTrenchFET®2009e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)3193W TcSingleENHANCEMENT MODE93WDRAIN10 nsN-ChannelSWITCHING9m Ω @ 30A, 10V2V @ 250μA1500pF @ 25V70A Tc19nC @ 5V8ns4.5V 10V±20V9 ns25 ns50ATO-220AB20V70A0.009Ohm30V200A800 mVUnknownNoROHS3 Compliant--------------
-
Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeTrenchFET®-e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierOther TransistorsMOSFET (Metal Oxide)313.7W Ta 250W TcSingleENHANCEMENT MODE250WDRAIN13 nsP-Channel-8m Ω @ 30A, 10V3V @ 250μA8500pF @ 25V75A Tc225nC @ 10V140ns4.5V 10V±20V175 ns115 ns-75ATO-220AB20V-0.008Ohm30V240A-2 VNo SVHC-ROHS3 Compliant26030Not Qualified55V-2V9.01mm10.41mm4.7mm-----
-
Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJBulkTrenchFET®2008e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)313.7W Ta 187W TcSingleENHANCEMENT MODE187WDRAIN20 nsN-Channel-4m Ω @ 75A, 10V3V @ 250μA10742pF @ 25V75A Tc250nC @ 10V40ns4.5V 10V±20V95 ns190 ns75ATO-220AB20V-0.006Ohm30V250A--NoROHS3 Compliant-----9.01mm10.41mm4.7mm280 mJ----
-
Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTube-2008e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierOther TransistorsMOSFET (Metal Oxide)313.75W Ta 187W TcSingleENHANCEMENT MODE187WDRAIN25 nsP-Channel-7m Ω @ 30A, 10V3V @ 250μA9000pF @ 25V75A Tc240nC @ 10V225ns4.5V 10V±20V210 ns150 ns-75ATO-220AB20V---30V240A-3 VNo SVHCNoROHS3 Compliant---30V-1V9.01mm10.41mm4.7mm-6.000006g7mOhm1Lead Free
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
25 March 2024
USB3300-EZK Manufacturer, Pinout, Features and Application
Ⅰ. USB3300-EZK descriptionⅡ. Manufacturer of USB3300-EZKⅢ. Pin diagram of USB3300-EZKⅣ. Technical parameters of USB3300-EZKⅤ. Application of USB3300-EZKⅥ. Functional features of USB3300-EZKⅦ. How does USB3300-EZK support OTG protocol?Ⅰ. USB3300-EZK... -
26 March 2024
Everything You Need to Know About the TL431 Voltage Regulator
Ⅰ. What is TL431 regulator?Ⅱ. Main features of TL431Ⅲ. TL431 ratingsⅣ. How to measure the quality of TL431?Ⅴ. What can it be used for?Ⅵ. How to distinguish the... -
26 March 2024
A Complete Guide to the TB6600HG
Ⅰ. TB6600HG descriptionⅡ. Specifications of TB6600HGⅢ. Operating conditions of TB6600HGⅣ. How to connect TB6600HG to the control system?Ⅴ. TB6600HG product featuresⅥ. Pin configuration of TB6600HGⅦ. Function description of... -
27 March 2024
LM358P Op-Amp: Characteristics, Package, Layout, Uses and More
Ⅰ. LM358P descriptionⅡ. Characteristics of LM358PⅢ. Package design of LM358PⅣ. Layout of LM358PⅤ. LM358P usesⅥ. LM358P circuitⅦ. Can LM358 and LM358P be replaced?Ⅷ. How to use LM358P correctly...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.