SUP70N03-09BP-E3

Vishay Siliconix SUP70N03-09BP-E3

Part Number:
SUP70N03-09BP-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3586827-SUP70N03-09BP-E3
Description:
MOSFET N-CH 30V 70A TO220AB
ECAD Model:
Datasheet:
SUP70N03-09BP-E3

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Specifications
Vishay Siliconix SUP70N03-09BP-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUP70N03-09BP-E3.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    93W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    93W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    70A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 5V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    50A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    70A
  • Drain-source On Resistance-Max
    0.009Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Nominal Vgs
    800 mV
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SUP70N03-09BP-E3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.70A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SUP70N03-09BP-E3 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 200A.


SUP70N03-09BP-E3 Applications
There are a lot of Vishay Siliconix
SUP70N03-09BP-E3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SUP70N03-09BP-E3 More Descriptions
Transistor MOSFET N-CH 30V 70A 3-Pin(3 Tab) TO-220AB
N-Channel MOSFETs 30V 70A 93W
30V N-CH, 175DEG.C RATED TRENCH
Product Comparison
The three parts on the right have similar specifications to SUP70N03-09BP-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain to Source Voltage (Vdss)
    Threshold Voltage
    Height
    Length
    Width
    Avalanche Energy Rating (Eas)
    Weight
    Resistance
    Number of Channels
    Lead Free
    View Compare
  • SUP70N03-09BP-E3
    SUP70N03-09BP-E3
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchFET®
    2009
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    93W Tc
    Single
    ENHANCEMENT MODE
    93W
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    9m Ω @ 30A, 10V
    2V @ 250μA
    1500pF @ 25V
    70A Tc
    19nC @ 5V
    8ns
    4.5V 10V
    ±20V
    9 ns
    25 ns
    50A
    TO-220AB
    20V
    70A
    0.009Ohm
    30V
    200A
    800 mV
    Unknown
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUP75P05-08-E3
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchFET®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Other Transistors
    MOSFET (Metal Oxide)
    3
    1
    3.7W Ta 250W Tc
    Single
    ENHANCEMENT MODE
    250W
    DRAIN
    13 ns
    P-Channel
    -
    8m Ω @ 30A, 10V
    3V @ 250μA
    8500pF @ 25V
    75A Tc
    225nC @ 10V
    140ns
    4.5V 10V
    ±20V
    175 ns
    115 ns
    -75A
    TO-220AB
    20V
    -
    0.008Ohm
    30V
    240A
    -2 V
    No SVHC
    -
    ROHS3 Compliant
    260
    30
    Not Qualified
    55V
    -2V
    9.01mm
    10.41mm
    4.7mm
    -
    -
    -
    -
    -
  • SUP75N03-04-E3
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Bulk
    TrenchFET®
    2008
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    3.7W Ta 187W Tc
    Single
    ENHANCEMENT MODE
    187W
    DRAIN
    20 ns
    N-Channel
    -
    4m Ω @ 75A, 10V
    3V @ 250μA
    10742pF @ 25V
    75A Tc
    250nC @ 10V
    40ns
    4.5V 10V
    ±20V
    95 ns
    190 ns
    75A
    TO-220AB
    20V
    -
    0.006Ohm
    30V
    250A
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    280 mJ
    -
    -
    -
    -
  • SUP75P03-07-E3
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    -
    2008
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Other Transistors
    MOSFET (Metal Oxide)
    3
    1
    3.75W Ta 187W Tc
    Single
    ENHANCEMENT MODE
    187W
    DRAIN
    25 ns
    P-Channel
    -
    7m Ω @ 30A, 10V
    3V @ 250μA
    9000pF @ 25V
    75A Tc
    240nC @ 10V
    225ns
    4.5V 10V
    ±20V
    210 ns
    150 ns
    -75A
    TO-220AB
    20V
    -
    -
    -30V
    240A
    -3 V
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    30V
    -1V
    9.01mm
    10.41mm
    4.7mm
    -
    6.000006g
    7mOhm
    1
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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