SUP75P03-07-E3

Vishay Siliconix SUP75P03-07-E3

Part Number:
SUP75P03-07-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2478409-SUP75P03-07-E3
Description:
MOSFET P-CH 30V 75A TO220AB
ECAD Model:
Datasheet:
SUP75P03-07-E3

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Specifications
Vishay Siliconix SUP75P03-07-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUP75P03-07-E3.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    6.000006g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    7mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.75W Ta 187W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    187W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    25 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    9000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    240nC @ 10V
  • Rise Time
    225ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    210 ns
  • Turn-Off Delay Time
    150 ns
  • Continuous Drain Current (ID)
    -75A
  • Threshold Voltage
    -1V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Pulsed Drain Current-Max (IDM)
    240A
  • Nominal Vgs
    -3 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SUP75P03-07-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9000pF @ 25V.This device conducts a continuous drain current (ID) of -75A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 150 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

SUP75P03-07-E3 Features
a continuous drain current (ID) of -75A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 240A.
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)


SUP75P03-07-E3 Applications
There are a lot of Vishay Siliconix
SUP75P03-07-E3 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SUP75P03-07-E3 More Descriptions
Single P-Channel 30 V 0.007 Ohms Flange Mount Power Mosfet - TO-220AB
Trans MOSFET P-CH 30V 75A 3-Pin (3 Tab) TO-220AB
MOSFET, P-Ch, VDSS -30V, RDS(ON) 0.0055Ohm, ID -75A, TO-220AB, PD 187W, VGS /-20V,-55C | Siliconix / Vishay SUP75P03-07-E3
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P CH, 30V, 75A, TO220AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-75A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:187W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-75A; Power Dissipation Pd:187W; Voltage Vgs Max:20V
Product Comparison
The three parts on the right have similar specifications to SUP75P03-07-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Factory Lead Time
    Series
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Transistor Application
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Qualification Status
    View Compare
  • SUP75P03-07-E3
    SUP75P03-07-E3
    Through Hole
    Through Hole
    TO-220-3
    3
    6.000006g
    SILICON
    -55°C~175°C TJ
    Tube
    2008
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    7mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Other Transistors
    MOSFET (Metal Oxide)
    3
    1
    1
    3.75W Ta 187W Tc
    Single
    ENHANCEMENT MODE
    187W
    DRAIN
    25 ns
    P-Channel
    7m Ω @ 30A, 10V
    3V @ 250μA
    9000pF @ 25V
    75A Tc
    240nC @ 10V
    225ns
    30V
    4.5V 10V
    ±20V
    210 ns
    150 ns
    -75A
    -1V
    TO-220AB
    20V
    -30V
    240A
    -3 V
    9.01mm
    10.41mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUP70060E-GE3
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~175°C TJ
    Bulk
    2017
    -
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    200W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    5.8m Ω @ 30A, 10V
    4V @ 250μA
    3330pF @ 50V
    131A Tc
    81nC @ 10V
    -
    100V
    7.5V 10V
    ±20V
    -
    -
    131A
    -
    TO-220AB
    -
    -
    240A
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    14 Weeks
    ThunderFET®
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    SWITCHING
    0.0064Ohm
    100V
    125 mJ
    -
  • SUP75P05-08-E3
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Other Transistors
    MOSFET (Metal Oxide)
    3
    1
    -
    3.7W Ta 250W Tc
    Single
    ENHANCEMENT MODE
    250W
    DRAIN
    13 ns
    P-Channel
    8m Ω @ 30A, 10V
    3V @ 250μA
    8500pF @ 25V
    75A Tc
    225nC @ 10V
    140ns
    55V
    4.5V 10V
    ±20V
    175 ns
    115 ns
    -75A
    -2V
    TO-220AB
    20V
    30V
    240A
    -2 V
    9.01mm
    10.41mm
    4.7mm
    No SVHC
    -
    ROHS3 Compliant
    -
    -
    TrenchFET®
    -
    260
    30
    -
    -
    -
    0.008Ohm
    -
    -
    Not Qualified
  • SUP75N03-04-E3
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    -55°C~175°C TJ
    Bulk
    2008
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    -
    3.7W Ta 187W Tc
    Single
    ENHANCEMENT MODE
    187W
    DRAIN
    20 ns
    N-Channel
    4m Ω @ 75A, 10V
    3V @ 250μA
    10742pF @ 25V
    75A Tc
    250nC @ 10V
    40ns
    -
    4.5V 10V
    ±20V
    95 ns
    190 ns
    75A
    -
    TO-220AB
    20V
    30V
    250A
    -
    9.01mm
    10.41mm
    4.7mm
    -
    No
    ROHS3 Compliant
    -
    -
    TrenchFET®
    -
    -
    -
    -
    -
    -
    0.006Ohm
    -
    280 mJ
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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