Vishay Siliconix SUP75P03-07-E3
- Part Number:
- SUP75P03-07-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478409-SUP75P03-07-E3
- Description:
- MOSFET P-CH 30V 75A TO220AB
- Datasheet:
- SUP75P03-07-E3
Vishay Siliconix SUP75P03-07-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUP75P03-07-E3.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight6.000006g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance7mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.75W Ta 187W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation187W
- Case ConnectionDRAIN
- Turn On Delay Time25 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs7m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds9000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
- Rise Time225ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)210 ns
- Turn-Off Delay Time150 ns
- Continuous Drain Current (ID)-75A
- Threshold Voltage-1V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Pulsed Drain Current-Max (IDM)240A
- Nominal Vgs-3 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SUP75P03-07-E3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9000pF @ 25V.This device conducts a continuous drain current (ID) of -75A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 150 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SUP75P03-07-E3 Features
a continuous drain current (ID) of -75A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 240A.
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SUP75P03-07-E3 Applications
There are a lot of Vishay Siliconix
SUP75P03-07-E3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9000pF @ 25V.This device conducts a continuous drain current (ID) of -75A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 150 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
SUP75P03-07-E3 Features
a continuous drain current (ID) of -75A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 240A.
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SUP75P03-07-E3 Applications
There are a lot of Vishay Siliconix
SUP75P03-07-E3 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
SUP75P03-07-E3 More Descriptions
Single P-Channel 30 V 0.007 Ohms Flange Mount Power Mosfet - TO-220AB
Trans MOSFET P-CH 30V 75A 3-Pin (3 Tab) TO-220AB
MOSFET, P-Ch, VDSS -30V, RDS(ON) 0.0055Ohm, ID -75A, TO-220AB, PD 187W, VGS /-20V,-55C | Siliconix / Vishay SUP75P03-07-E3
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P CH, 30V, 75A, TO220AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-75A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:187W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-75A; Power Dissipation Pd:187W; Voltage Vgs Max:20V
Trans MOSFET P-CH 30V 75A 3-Pin (3 Tab) TO-220AB
MOSFET, P-Ch, VDSS -30V, RDS(ON) 0.0055Ohm, ID -75A, TO-220AB, PD 187W, VGS /-20V,-55C | Siliconix / Vishay SUP75P03-07-E3
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P CH, 30V, 75A, TO220AB; Transistor Polarity:P Channel; Continuous Drain Current Id:-75A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:187W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-75A; Power Dissipation Pd:187W; Voltage Vgs Max:20V
The three parts on the right have similar specifications to SUP75P03-07-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyPin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeFactory Lead TimeSeriesTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationTransistor ApplicationDrain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Qualification StatusView Compare
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SUP75P03-07-E3Through HoleThrough HoleTO-220-336.000006gSILICON-55°C~175°C TJTube2008e3yesObsolete1 (Unlimited)3EAR997mOhmMatte Tin (Sn) - with Nickel (Ni) barrierOther TransistorsMOSFET (Metal Oxide)3113.75W Ta 187W TcSingleENHANCEMENT MODE187WDRAIN25 nsP-Channel7m Ω @ 30A, 10V3V @ 250μA9000pF @ 25V75A Tc240nC @ 10V225ns30V4.5V 10V±20V210 ns150 ns-75A-1VTO-220AB20V-30V240A-3 V9.01mm10.41mm4.7mmNo SVHCNoROHS3 CompliantLead Free-------------
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Through HoleThrough HoleTO-220-3--SILICON-55°C~175°C TJBulk2017--Active1 (Unlimited)3EAR99---MOSFET (Metal Oxide)-1-200W Tc-ENHANCEMENT MODE---N-Channel5.8m Ω @ 30A, 10V4V @ 250μA3330pF @ 50V131A Tc81nC @ 10V-100V7.5V 10V±20V--131A-TO-220AB--240A------ROHS3 Compliant-14 WeeksThunderFET®SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3SINGLE WITH BUILT-IN DIODESWITCHING0.0064Ohm100V125 mJ-
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Through HoleThrough HoleTO-220-33-SILICON-55°C~175°C TJTube-e3yesObsolete1 (Unlimited)3EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierOther TransistorsMOSFET (Metal Oxide)31-3.7W Ta 250W TcSingleENHANCEMENT MODE250WDRAIN13 nsP-Channel8m Ω @ 30A, 10V3V @ 250μA8500pF @ 25V75A Tc225nC @ 10V140ns55V4.5V 10V±20V175 ns115 ns-75A-2VTO-220AB20V30V240A-2 V9.01mm10.41mm4.7mmNo SVHC-ROHS3 Compliant--TrenchFET®-26030---0.008Ohm--Not Qualified
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Through HoleThrough HoleTO-220-33-SILICON-55°C~175°C TJBulk2008e3yesObsolete1 (Unlimited)3EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)31-3.7W Ta 187W TcSingleENHANCEMENT MODE187WDRAIN20 nsN-Channel4m Ω @ 75A, 10V3V @ 250μA10742pF @ 25V75A Tc250nC @ 10V40ns-4.5V 10V±20V95 ns190 ns75A-TO-220AB20V30V250A-9.01mm10.41mm4.7mm-NoROHS3 Compliant--TrenchFET®------0.006Ohm-280 mJ-
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