SUD40N02-08-E3

Vishay Siliconix SUD40N02-08-E3

Part Number:
SUD40N02-08-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2852892-SUD40N02-08-E3
Description:
MOSFET N-CH 20V 40A TO252
ECAD Model:
Datasheet:
SUD40N02-08-E3

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Specifications
Vishay Siliconix SUD40N02-08-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUD40N02-08-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    8.3W Ta 71W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    71W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 20A, 4.5V
  • Vgs(th) (Max) @ Id
    600mV @ 250μA (Min)
  • Input Capacitance (Ciss) (Max) @ Vds
    2660pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 4.5V
  • Rise Time
    120ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    40A
  • Threshold Voltage
    600mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain-source On Resistance-Max
    0.0085Ohm
  • Drain to Source Breakdown Voltage
    20V
  • Dual Supply Voltage
    20V
  • Nominal Vgs
    600 mV
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.223mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SUD40N02-08-E3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2660pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 40A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 600mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

SUD40N02-08-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 45 ns
a threshold voltage of 600mV


SUD40N02-08-E3 Applications
There are a lot of Vishay Siliconix
SUD40N02-08-E3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SUD40N02-08-E3 More Descriptions
MOSFET; N-Channel 20V 14MOHM@2.5VGS PWM Optimized | Siliconix / Vishay SUD40N02-08-E3
Trans MOSFET N-CH 20V 40A 3-Pin(2 Tab) DPAK
N-Channel MOSFETs 20V 40A 71W
French Electronic Distributor since 1988
MOSFET, N, D-PAK; Transistor Polarity:N; Max Current Id:40A; Max Voltage Vds:20V; On State Resistance:0.0085ohm; Rds Measurement Voltage:4.5V; Max Voltage Vgs:12V; Power Dissipation:71W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; Alternate Case Style:D-PAK; Case Style:DPAK; Cont Current Id:40A; Max Power Dissipation Ptot:71W; Min Voltage Vgs th:0.6V; Power Dissipation Pd:71W; Pulse Current Idm:100A; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:20V; Typ Voltage Vgs th:0.6V; Voltage Vgs Rds on Measurement:4.5V
Product Comparison
The three parts on the right have similar specifications to SUD40N02-08-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Number of Channels
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Factory Lead Time
    Resistance
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JEDEC-95 Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Lead Free
    View Compare
  • SUD40N02-08-E3
    SUD40N02-08-E3
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2008
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    8.3W Ta 71W Tc
    Single
    ENHANCEMENT MODE
    71W
    DRAIN
    20 ns
    N-Channel
    8.5m Ω @ 20A, 4.5V
    600mV @ 250μA (Min)
    2660pF @ 20V
    40A Tc
    35nC @ 4.5V
    120ns
    2.5V 4.5V
    ±12V
    20 ns
    45 ns
    40A
    600mV
    12V
    0.0085Ohm
    20V
    20V
    600 mV
    2.3876mm
    6.7056mm
    6.223mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUD45P03-15-E3
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2007
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    4W Ta 70W Tc
    Single
    -
    70W
    -
    15 ns
    P-Channel
    15mOhm @ 13A, 10V
    1V @ 250μA (Min)
    3200pF @ 25V
    -
    125nC @ 10V
    18ns
    4.5V 10V
    ±20V
    47 ns
    60 ns
    13A
    -
    20V
    -
    -
    -
    -
    2.39mm
    6.73mm
    6.22mm
    -
    -
    ROHS3 Compliant
    TO-252, (D-Pak)
    1.437803g
    150°C
    -55°C
    -30V
    1
    30V
    3.2nF
    15mOhm
    15 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
  • SUD40N10-25-T4-E3
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3W Ta 136W Tc
    -
    -
    -
    -
    8 ns
    N-Channel
    25mOhm @ 40A, 10V
    3V @ 250μA
    2400pF @ 25V
    40A Tc
    60nC @ 10V
    40ns
    10V
    ±20V
    80 ns
    15 ns
    40A
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    TO-252, (D-Pak)
    -
    175°C
    -55°C
    -
    -
    100V
    2.4nF
    -
    25 mΩ
    14 Weeks
    -
    -
    -
    -
    -
    -
    -
  • SUD40N10-25-E3
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    3W Ta 136W Tc
    Single
    ENHANCEMENT MODE
    3W
    DRAIN
    8 ns
    N-Channel
    25m Ω @ 40A, 10V
    3V @ 250μA
    2400pF @ 25V
    40A Tc
    60nC @ 10V
    40ns
    10V
    ±20V
    80 ns
    15 ns
    40A
    3V
    20V
    -
    100V
    -
    3 V
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    25mOhm
    260
    30
    TO-252AA
    70A
    80 mJ
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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