SUD40N10-25-E3

Vishay Siliconix SUD40N10-25-E3

Part Number:
SUD40N10-25-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2482338-SUD40N10-25-E3
Description:
MOSFET N-CH 100V 40A TO252
ECAD Model:
Datasheet:
SUD40N10-25-E3

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Specifications
Vishay Siliconix SUD40N10-25-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUD40N10-25-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    25mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    3W Ta 136W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    25m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Rise Time
    40ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    80 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    40A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    70A
  • Avalanche Energy Rating (Eas)
    80 mJ
  • Nominal Vgs
    3 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SUD40N10-25-E3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 40A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

SUD40N10-25-E3 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 70A.
a threshold voltage of 3V


SUD40N10-25-E3 Applications
There are a lot of Vishay Siliconix
SUD40N10-25-E3 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SUD40N10-25-E3 More Descriptions
Single N-Channel 100 V 0.025 Ohms Surface Mount Power Mosfet - TO-252
Trans MOSFET N-CH 100V 40A 3-Pin(2 Tab) DPAK / MOSFET N-CH 100V 40A TO252
Power Field-Effect Transistor, 40A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:40A; Package / Case:DPAK; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to SUD40N10-25-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain Current-Max (Abs) (ID)
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Number of Channels
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Factory Lead Time
    View Compare
  • SUD40N10-25-E3
    SUD40N10-25-E3
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    25mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    4
    R-PSSO-G2
    1
    3W Ta 136W Tc
    Single
    ENHANCEMENT MODE
    3W
    DRAIN
    8 ns
    N-Channel
    25m Ω @ 40A, 10V
    3V @ 250μA
    2400pF @ 25V
    40A Tc
    60nC @ 10V
    40ns
    10V
    ±20V
    80 ns
    15 ns
    40A
    3V
    TO-252AA
    20V
    100V
    70A
    80 mJ
    3 V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUD40N02-3M3P-E3
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    3.3mOhm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    -
    -
    4
    R-PSSO-G2
    1
    3.3W Ta 79W Tc
    Single
    ENHANCEMENT MODE
    3.3W
    DRAIN
    40 ns
    N-Channel
    3.3m Ω @ 20A, 10V
    3V @ 250μA
    6520pF @ 10V
    24.4A Ta 40A Tc
    160nC @ 10V
    30ns
    4.5V 10V
    ±20V
    33 ns
    67 ns
    24.4A
    -
    -
    20V
    20V
    100A
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    40A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUD45P03-15-E3
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2007
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    4W Ta 70W Tc
    Single
    -
    70W
    -
    15 ns
    P-Channel
    15mOhm @ 13A, 10V
    1V @ 250μA (Min)
    3200pF @ 25V
    -
    125nC @ 10V
    18ns
    4.5V 10V
    ±20V
    47 ns
    60 ns
    13A
    -
    -
    20V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    TO-252, (D-Pak)
    1.437803g
    150°C
    -55°C
    -30V
    1
    30V
    3.2nF
    15mOhm
    15 mΩ
    2.39mm
    6.73mm
    6.22mm
    -
  • SUD40N10-25-T4-E3
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    3W Ta 136W Tc
    -
    -
    -
    -
    8 ns
    N-Channel
    25mOhm @ 40A, 10V
    3V @ 250μA
    2400pF @ 25V
    40A Tc
    60nC @ 10V
    40ns
    10V
    ±20V
    80 ns
    15 ns
    40A
    -
    -
    20V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    TO-252, (D-Pak)
    -
    175°C
    -55°C
    -
    -
    100V
    2.4nF
    -
    25 mΩ
    -
    -
    -
    14 Weeks
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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