Vishay Siliconix SUD40N10-25-E3
- Part Number:
- SUD40N10-25-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2482338-SUD40N10-25-E3
- Description:
- MOSFET N-CH 100V 40A TO252
- Datasheet:
- SUD40N10-25-E3
Vishay Siliconix SUD40N10-25-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUD40N10-25-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance25mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max3W Ta 136W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3W
- Case ConnectionDRAIN
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs25m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C40A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Rise Time40ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)80 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage3V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)70A
- Avalanche Energy Rating (Eas)80 mJ
- Nominal Vgs3 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SUD40N10-25-E3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 40A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
SUD40N10-25-E3 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 70A.
a threshold voltage of 3V
SUD40N10-25-E3 Applications
There are a lot of Vishay Siliconix
SUD40N10-25-E3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 40A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Peak drain current for this device is 70A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
SUD40N10-25-E3 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 70A.
a threshold voltage of 3V
SUD40N10-25-E3 Applications
There are a lot of Vishay Siliconix
SUD40N10-25-E3 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
SUD40N10-25-E3 More Descriptions
Single N-Channel 100 V 0.025 Ohms Surface Mount Power Mosfet - TO-252
Trans MOSFET N-CH 100V 40A 3-Pin(2 Tab) DPAK / MOSFET N-CH 100V 40A TO252
Power Field-Effect Transistor, 40A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:40A; Package / Case:DPAK; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 100V 40A 3-Pin(2 Tab) DPAK / MOSFET N-CH 100V 40A TO252
Power Field-Effect Transistor, 40A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:40A; Package / Case:DPAK; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to SUD40N10-25-E3.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain Current-Max (Abs) (ID)Supplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCNumber of ChannelsDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthFactory Lead TimeView Compare
-
SUD40N10-25-E3Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)TrenchFET®2014e3yesActive1 (Unlimited)2EAR9925mOhmMatte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)GULL WING260304R-PSSO-G213W Ta 136W TcSingleENHANCEMENT MODE3WDRAIN8 nsN-Channel25m Ω @ 40A, 10V3V @ 250μA2400pF @ 25V40A Tc60nC @ 10V40ns10V±20V80 ns15 ns40A3VTO-252AA20V100V70A80 mJ3 VNo SVHCNoROHS3 CompliantLead Free----------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)2EAR993.3mOhm-FET General Purpose PowerMOSFET (Metal Oxide)GULL WING--4R-PSSO-G213.3W Ta 79W TcSingleENHANCEMENT MODE3.3WDRAIN40 nsN-Channel3.3m Ω @ 20A, 10V3V @ 250μA6520pF @ 10V24.4A Ta 40A Tc160nC @ 10V30ns4.5V 10V±20V33 ns67 ns24.4A--20V20V100A---NoROHS3 CompliantLead Free40A--------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~150°C TJTape & Reel (TR)TrenchFET®2007--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)------4W Ta 70W TcSingle-70W-15 nsP-Channel15mOhm @ 13A, 10V1V @ 250μA (Min)3200pF @ 25V-125nC @ 10V18ns4.5V 10V±20V47 ns60 ns13A--20V------ROHS3 Compliant--TO-252, (D-Pak)1.437803g150°C-55°C-30V130V3.2nF15mOhm15 mΩ2.39mm6.73mm6.22mm-
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633--55°C~175°C TJTape & Reel (TR)TrenchFET®2013--Active1 (Unlimited)-----MOSFET (Metal Oxide)------3W Ta 136W Tc----8 nsN-Channel25mOhm @ 40A, 10V3V @ 250μA2400pF @ 25V40A Tc60nC @ 10V40ns10V±20V80 ns15 ns40A--20V------ROHS3 Compliant--TO-252, (D-Pak)-175°C-55°C--100V2.4nF-25 mΩ---14 Weeks
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 February 2024
LM358DR2G Operational Amplifier Symbol, Features, Applications and More
Ⅰ. Introduction to LM358DR2GⅡ. Technical parameters of LM358DR2GⅢ. Features of LM358DR2GⅣ. Symbol, footprint and pin configuration of LM358DR2GⅤ. Where is LM358DR2G used?Ⅵ. Circuit description of LM358DR2GⅦ. The difference... -
20 February 2024
MB6S Rectifier Bridge Specifications, Working Principle and Features
Ⅰ. Overview of MB6SⅡ. Specifications of MB6SⅢ. Working principle of MB6SⅣ. Circuit schematic diagram of MB6SⅤ. What are the features of MB6S?Ⅵ. Absolute maximum ratings of MB6SⅦ. How... -
21 February 2024
EPCS16SI8N Manufacturer, Market Trend, Application Fields and More
Ⅰ. Overview of EPCS16SI8NⅡ. Manufacturer of EPCS16SI8NⅢ. Specifications of EPCS16SI8NⅣ. Dimensions and package of EPCS16SI8NⅤ. Functional description of EPCS16SI8NⅥ. Application fields of EPCS16SI8NⅦ. Market trend of EPCS16SI8NⅧ. How... -
21 February 2024
What is the ADS1118IDGSR and How Does it Work?
Ⅰ. ADS1118IDGSR descriptionⅡ. Specifications of ADS1118IDGSRⅢ. Absolute maximum ratings of ADS1118IDGSRⅣ. How does ADS1118IDGSR work?Ⅴ. Package of ADS1118IDGSRⅥ. What are the characteristics of ADS1118IDGSR?Ⅶ. Typical application of ADS1118IDGSRⅧ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.