STMicroelectronics STY60NK30Z

Name: STY60NK30Z
Brand: STMicroelectronics
SKU: 2487775-STY60NK30Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STY60NK30Z

Manufacturer:: STMicroelectronics

Ventron No:: 2487775-STY60NK30Z

Description:: MOSFET N-CH 300V 60A MAX247

ECAD Model:

Datasheet:: STY60NK30Z

Specifications

STMicroelectronics STY60NK30Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STY60NK30Z.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
247
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
300V
Technology
MOSFET (Metal Oxide)
Current Rating
60A
Base Part Number
STY60N
Pin Count
3
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Power Dissipation-Max
450W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
450W
Turn On Delay Time
50 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
220nC @ 10V
Rise Time
90ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
150 ns
Continuous Drain Current (ID)
60A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.045Ohm
Drain to Source Breakdown Voltage
300V
Pulsed Drain Current-Max (IDM)
240A
Avalanche Energy Rating (Eas)
700 mJ
Height
20.3mm
Length
15.9mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STY60NK30Z Description

The STY60NK30Z is part of the SuperMESHTM series, which was created via extreme optimization of ST's well-known strip-based PowerMESHTM structure. In addition to drastically lowering resistance, extra effort is taken to assure very good dv/dt capability for the most demanding applications.

STY60NK30Z Features

Typical RDS(ON) = 0.033 ?
Extremely high DV/DT Capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good man

STY60NK30Z Applications

High current, high efficiency switching DC/DC Conveters for plasma TV’S
Ideal for off-line power supplies, adaptors and PFC

STY60NK30Z More Descriptions

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Power Field-Effect Transistor, 60A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 300V, 60A, Max-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:300V; On Resistance Rds(On):0.033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Rohs Compliant: Yes |Stmicroelectronics STY60NK30Z
Power MOSFETs, 300V, 60A, Max247, TubeSTMicroelectronics SCT

Certification