STMicroelectronics STW8NK80Z

Name: STW8NK80Z
Brand: STMicroelectronics
SKU: 3554229-STW8NK80Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW8NK80Z

Manufacturer:: STMicroelectronics

Ventron No:: 3554229-STW8NK80Z

Description:: MOSFET N-CH 800V 6.2A TO-247

ECAD Model:

Datasheet:: STW8NK80Z

Specifications

STMicroelectronics STW8NK80Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW8NK80Z.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Current Rating
6.2A
Base Part Number
STW8N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1320pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.2A Tc
Gate Charge (Qg) (Max) @ Vgs
46nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
28 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
6.2A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
24.8A
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW8NK80Z Description
The STW8NK80Z belongs to the SuperMESH? series obtained through an extreme optimization of ST's well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.

STW8NK80Z Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability

STW8NK80Z Applications
Switching applications

STW8NK80Z More Descriptions

N-channel 800 V, 1.3 Ohm, 6.2 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
Power Field-Effect Transistor, 6.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio

Product Comparison

The three parts on the right have similar specifications to STW8NK80Z.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain to Source Voltage (Vdss)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Avalanche Energy Rating (Eas)

Additional Feature

Terminal Position

Configuration

Voltage

Current

Drain-source On Resistance-Max

Reach Compliance Code

View Compare
STW8NK80Z

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Active

1 (Unlimited)

3

EAR99

FET General Purpose Power

800V

MOSFET (Metal Oxide)

6.2A

STW8N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

17 ns

N-Channel

SWITCHING

1.5 Ω @ 3.1A, 10V

4.5V @ 100μA

1320pF @ 25V

6.2A Tc

46nC @ 10V

30ns

10V

±30V

28 ns

48 ns

6.2A

3.75V

30V

800V

24.8A

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW8NB100

STMicroelectronics

-

-

-

Through Hole

Through Hole

TO-247-3

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

FET General Purpose Power

1kV

MOSFET (Metal Oxide)

7.3A

STW8N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

N-Channel

SWITCHING

1.45 Ω @ 3.6A, 10V

5V @ 250μA

2900pF @ 25V

7.3A Tc

95nC @ 10V

13ns

10V

±30V

32 ns

-

7.3A

-

30V

1kV

29.2A

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Matte Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

1000V

TO-247AC

8A

700 mJ

-

-

-

-

-

-

-

STW8NK80Z vs STW8NB100
STW80NF06

STMicroelectronics

-

-

-

Through Hole

Through Hole

TO-247-3

-

SILICON

175°C TJ

Tube

STripFET™ II

-

Obsolete

1 (Unlimited)

3

EAR99

FET General Purpose Power

60V

MOSFET (Metal Oxide)

80A

STW80N

3

1

300W Tc

-

ENHANCEMENT MODE

-

25 ns

N-Channel

SWITCHING

8m Ω @ 40A, 10V

4V @ 250μA

3850pF @ 25V

80A Tc

150nC @ 10V

85ns

10V

±20V

25 ns

70 ns

80A

-

20V

-

-

-

-

-

-

No

Non-RoHS Compliant

Contains Lead

-

245

-

R-PSFM-T3

-

-

TO-247AA

-

870 mJ

LOW THRESHOLD

SINGLE

SINGLE WITH BUILT-IN DIODE

60V

80A

0.008Ohm

-

STW8NK80Z vs STW80NF06
STW80NE06-10

STMicroelectronics

-

-

-

Through Hole

Through Hole

TO-247-3

-

SILICON

175°C TJ

Tube

STripFET™

e0

Obsolete

1 (Unlimited)

3

EAR99

FET General Purpose Power

60V

MOSFET (Metal Oxide)

80A

STW80N

3

1

250W Tc

Single

ENHANCEMENT MODE

250W

-

N-Channel

SWITCHING

10m Ω @ 40A, 10V

4V @ 250μA

7600pF @ 25V

80A Tc

189nC @ 10V

150ns

10V

±20V

75 ns

-

80A

-

20V

60V

320A

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

Tin/Lead (Sn/Pb)

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

-

-

-

350 mJ

-

-

-

-

-

0.01Ohm

not_compliant

STW8NK80Z vs STW80NE06-10