STMicroelectronics STW80NE06-10

STW80NE06-10 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The maximum input capacitance of this device is 7600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.There is no pulsed drain current maximum for this device based on its rated peak drain current 320A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

STW80NE06-10 Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 320A.


STW80NE06-10 Applications
There are a lot of STMicroelectronics
STW80NE06-10 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,