STMicroelectronics STW75NF30

Name: STW75NF30
Brand: STMicroelectronics
SKU: 2848564-STW75NF30
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW75NF30

Manufacturer:: STMicroelectronics

Ventron No:: 2848564-STW75NF30

Description:: MOSFET N-CH 300V 60A TO-247

ECAD Model:

Datasheet:: STW75NF30

Specifications

STMicroelectronics STW75NF30 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW75NF30.

Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
STripFET™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
45mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW75N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
320W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
320W
Turn On Delay Time
115 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5930pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
164nC @ 10V
Rise Time
87ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
101 ns
Turn-Off Delay Time
141 ns
Continuous Drain Current (ID)
60A
Threshold Voltage
3V
JEDEC-95 Code
TO-247AD
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
300V
Pulsed Drain Current-Max (IDM)
240A
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The STW75NF30 is an N-channel 300 V, 0.037 ?, 60 A, TO-247 low gate charge STripFET? Power MOSFET. This Power MOSFET series was specifically created to reduce input capacitance and gate charge using STMicroelectronics' proprietary STripFETTM technology. Therefore, it is appropriate for use as the primary switch in modern, high-efficiency, isolated DC-DC converters.

Features
Exceptional dv/dt capability
Low gate charge
100% Avalanche tested
Maximum junction temperature (TJ(max))
Continuous drain current (ID)
Safe operating area (SOA)

Applications
Switching applications
Small motor control
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
Solar inverters
Automotive applications

STW75NF30 More Descriptions

N-channel 300 V, 0.037 Ohm, 60 A low gate charge STripFET Power MOSFET in TO-247 package
Trans MOSFET N-CH 300V 60A Automotive 3-Pin(3 Tab) TO-247 Tube
N-Channel 300 V 37 mOhm Flange Mount STripFET Power Mosfet - TO-247
Power Field-Effect Transistor, 60A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
MOSFET, N CH, 300V, 60A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 320W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 60A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 300V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STW75NF30.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Avalanche Energy Rating (Eas)

Weight

Number of Channels

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
STW75NF30

STMicroelectronics

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

STripFET™

e3

Obsolete

1 (Unlimited)

3

EAR99

45mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

STW75N

3

1

320W Tc

Single

ENHANCEMENT MODE

320W

115 ns

N-Channel

SWITCHING

45m Ω @ 30A, 10V

4V @ 250μA

5930pF @ 25V

60A Tc

164nC @ 10V

87ns

10V

±20V

101 ns

141 ns

60A

3V

TO-247AD

20V

300V

240A

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STW78N65M5

STMicroelectronics

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

Automotive, AEC-Q101, MDmesh™ V

e3

Active

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

STW78N

-

1

450W Tc

Single

ENHANCEMENT MODE

450W

163 ns

N-Channel

SWITCHING

32m Ω @ 34.5A, 10V

5V @ 250μA

9000pF @ 100V

69A Tc

203nC @ 10V

14ns

10V

±25V

14 ns

26 ns

69A

-

-

25V

650V

276A

20.15mm

15.75mm

5.15mm

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 7 months ago)

17 Weeks

2000 mJ

-

-

-

-

-

STW75NF30 vs STW78N65M5
STW70N60M2

STMicroelectronics

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

3

EAR99

-

FET General Purpose Powers

MOSFET (Metal Oxide)

STW70N

-

1

450W Tc

Single

ENHANCEMENT MODE

450W

32 ns

N-Channel

SWITCHING

40m Ω @ 34A, 10V

4V @ 250μA

5200pF @ 100V

68A Tc

118nC @ 10V

17ns

10V

±25V

9 ns

155 ns

68A

3V

-

25V

-

272A

-

-

-

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

9000 mJ

38.000013g

1

600V

0.04Ohm

600V

STW75NF30 vs STW70N60M2
STW70N60M2-4

STMicroelectronics

-

-

Through Hole

TO-247-3

-

-

-55°C~150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

STW70N

-

-

450W Tc

-

-

-

-

N-Channel

-

40m Ω @ 34A, 10V

4V @ 250μA

5200pF @ 100V

68A Tc

118nC @ 10V

-

10V

±25V

-

-

68A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

26 Weeks

-

-

-

600V

-

-

STW75NF30 vs STW70N60M2-4