STMicroelectronics STW7NK90Z
- Part Number:
- STW7NK90Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2848513-STW7NK90Z
- Description:
- MOSFET N-CH 900V 5.8A TO-247
- Datasheet:
- STW7NK90Z
STMicroelectronics STW7NK90Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW7NK90Z.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance2Ohm
- Terminal FinishTin (Sn)
- Additional FeatureAVALANCHE RATED, HIGH VOLTAGE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC900V
- TechnologyMOSFET (Metal Oxide)
- Current Rating5.8A
- Base Part NumberSTW7N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max140W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation140W
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2 Ω @ 2.9A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.8A Tc
- Gate Charge (Qg) (Max) @ Vgs60.5nC @ 10V
- Rise Time45ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)2.9A
- Threshold Voltage3.75V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage900V
- Height20.15mm
- Length15.75mm
- Width5.15mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STW7NK90Z Description
The STW7NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH? technology, achieved through optimization of a well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
STW7NK90Z Features
Extremely high dv/dt capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Very good manufacturing repeatability
STW7NK90Z Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
The STW7NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH? technology, achieved through optimization of a well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
STW7NK90Z Features
Extremely high dv/dt capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Very good manufacturing repeatability
STW7NK90Z Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
STW7NK90Z More Descriptions
N-channel 900V - 1.56Ohm - 5.8A - TO-247 Zener-protected SuperMESH(TM) Power MOSFET
Transistor MOSFET N-CH 900V 5.8A 3-Pin (3 Tab) TO-247 Tube
N-Channel 900 V 2 Ohm Flange Mount SuperMESH Power MOSFET - TO-247
N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-247 packageCiiva Crawler
Mosfet, N Channel, 900V, 5.8A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:2.9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STW7NK90Z
Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Transistor MOSFET N-CH 900V 5.8A 3-Pin (3 Tab) TO-247 Tube
N-Channel 900 V 2 Ohm Flange Mount SuperMESH Power MOSFET - TO-247
N-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-247 packageCiiva Crawler
Mosfet, N Channel, 900V, 5.8A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:2.9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STW7NK90Z
Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
The three parts on the right have similar specifications to STW7NK90Z.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingWeightNumber of ChannelsDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)JEDEC-95 CodeView Compare
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STW7NK90ZACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR992OhmTin (Sn)AVALANCHE RATED, HIGH VOLTAGEFET General Purpose Power900VMOSFET (Metal Oxide)5.8ASTW7N31140W TcSingleENHANCEMENT MODE140W17 nsN-ChannelSWITCHING2 Ω @ 2.9A, 10V4.5V @ 100μA1350pF @ 25V5.8A Tc60.5nC @ 10V45ns10V±30V20 ns20 ns2.9A3.75V30V900V20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free----------
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeMDmesh™ II Plus-Active1 (Unlimited)3EAR99---FET General Purpose Powers-MOSFET (Metal Oxide)-STW70N-1450W TcSingleENHANCEMENT MODE450W32 nsN-ChannelSWITCHING40m Ω @ 34A, 10V4V @ 250μA5200pF @ 100V68A Tc118nC @ 10V17ns10V±25V9 ns155 ns68A3V25V----No SVHCNoROHS3 CompliantLead FreeTin38.000013g1600V0.04Ohm272A600V9000 mJ-
-
ACTIVE (Last Updated: 8 months ago)26 Weeks-Through HoleTO-247-3---55°C~150°C TJTubeMDmesh™ M2-Active1 (Unlimited)-------MOSFET (Metal Oxide)-STW70N--450W Tc----N-Channel-40m Ω @ 34A, 10V4V @ 250μA5200pF @ 100V68A Tc118nC @ 10V-10V±25V--68A--------ROHS3 Compliant----600V-----
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-12 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeSuperMESH3™e3Active1 (Unlimited)3EAR991.35OhmMatte Tin (Sn)-FET General Purpose Power-MOSFET (Metal Oxide)-STW7N31150W TcSingleENHANCEMENT MODE150W14 nsN-ChannelSWITCHING1.35 Ω @ 3.6A, 10V5V @ 100μA1031pF @ 100V7.2A Tc34nC @ 10V9ns10V±30V23 ns36 ns7.2A-30V950V20.15mm15.75mm5.15mmNo SVHCNoROHS3 CompliantLead Free-----28.8A-220 mJTO-247AC
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