STMicroelectronics STW34NM60ND

Name: STW34NM60ND
Brand: STMicroelectronics
SKU: 2482899-STW34NM60ND
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW34NM60ND

Manufacturer:: STMicroelectronics

Ventron No:: 2482899-STW34NM60ND

Description:: MOSFET N-CH 600V 29A TO-247

ECAD Model:

Datasheet:: STx34NM60ND

Specifications

STMicroelectronics STW34NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW34NM60ND.

Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
110MOhm
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW34N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Case Connection
DRAIN
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
110m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2785pF @ 50V
Current - Continuous Drain (Id) @ 25°C
29A Tc
Gate Charge (Qg) (Max) @ Vgs
80.4nC @ 10V
Rise Time
53.4ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
61.8 ns
Turn-Off Delay Time
111 ns
Continuous Drain Current (ID)
29A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW34NM60ND Description STW34NM60ND MOSFET is part of the 2nd generation of MDmesh technology. STW34NM60ND N-channel MOSFET associates a new vertical design to the layout of the company's strip. STMicroelectronics STW34NM60ND brings together all the benefits of lower resistance to electrical current and quick switching to an inherent body diode that is fast to recover. STW34NM60ND Features Low gate charge Low gate input resistance Low input capacitance 100% avalanche tested STW34NM60ND Applications Switching applications server/telecom power FPD TV power ATX power Industrial power

STW34NM60ND More Descriptions

N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-247
N-Channel 600 V 110 mOhm Flange Mount FDmesh II Power MOSFET - TO-247
Power Field-Effect Transistor, 29A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 600V, 29A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.097ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to STW34NM60ND.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-30 Code

Qualification Status

Voltage

Current

Avalanche Energy Rating (Eas)

Lifecycle Status

Weight

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Drain to Source Voltage (Vdss)

Terminal Finish

Voltage - Rated DC

Reach Compliance Code

Current Rating

JEDEC-95 Code

Turn On Time-Max (ton)

View Compare
STW34NM60ND

STMicroelectronics

16 Weeks

Tin

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

110MOhm

ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

STW34N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

DRAIN

30 ns

N-Channel

SWITCHING

110m Ω @ 14.5A, 10V

5V @ 250μA

2785pF @ 50V

29A Tc

80.4nC @ 10V

53.4ns

10V

±25V

61.8 ns

111 ns

29A

4V

25V

600V

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW30NM60ND

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

-

SILICON

150°C TJ

Tube

FDmesh™ II

-

Obsolete

1 (Unlimited)

3

EAR99

130mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

STW30N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

-

N-Channel

SWITCHING

130m Ω @ 12.5A, 10V

5V @ 250μA

2800pF @ 50V

25A Tc

100nC @ 10V

50ns

10V

±25V

75 ns

110 ns

25A

-

25V

600V

-

-

-

-

-

ROHS3 Compliant

Lead Free

R-PSFM-T3

Not Qualified

600V

34A

900 mJ

-

-

-

-

-

-

-

-

-

-

-

-

STW34NM60ND vs STW30NM60ND
STW33N60M2

STMicroelectronics

16 Weeks

-

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

STW33N

-

-

190W Tc

Single

-

190W

-

16 ns

N-Channel

-

125m Ω @ 13A, 10V

4V @ 250μA

1781pF @ 100V

26A Tc

45.5nC @ 10V

9.6ns

10V

±25V

9 ns

109 ns

26A

-

25V

-

20.15mm

15.75mm

5.15mm

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

38.000013g

NOT SPECIFIED

NOT SPECIFIED

1

600V

-

-

-

-

-

-

STW34NM60ND vs STW33N60M2
STW34NB20

STMicroelectronics

-

-

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

75mOhm

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

STW34N

3

1

180W Tc

Single

ENHANCEMENT MODE

180W

-

30 ns

N-Channel

SWITCHING

75m Ω @ 17A, 10V

5V @ 250μA

3300pF @ 25V

34A Tc

80nC @ 10V

40ns

10V

±30V

18 ns

-

34A

-

30V

200V

20.15mm

15.75mm

5.15mm

-

-

ROHS3 Compliant

Lead Free

-

Not Qualified

-

-

650 mJ

-

45.359237mg

NOT SPECIFIED

NOT SPECIFIED

-

-

Tin (Sn)

200V

not_compliant

34A

TO-247AC

95ns

STW34NM60ND vs STW34NB20