STMicroelectronics STW30NM60D

Name: STW30NM60D
Brand: STMicroelectronics
SKU: 2851504-STW30NM60D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW30NM60D

Manufacturer:: STMicroelectronics

Ventron No:: 2851504-STW30NM60D

Description:: MOSFET N-CH 600V 30A TO-247

ECAD Model:

Datasheet:: STW30NM60D

Specifications

STMicroelectronics STW30NM60D technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW30NM60D.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
30A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW30N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Voltage
600V
Power Dissipation-Max
312W Tc
Element Configuration
Single
Current
34A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
312W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
145m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2520pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
115nC @ 10V
Rise Time
33ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
30A
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.145Ohm
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
740 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW30NM60D Description
STW30NM60D is 600v N-channel Fast diode MDmesh? Power MOSFET. The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, particularly ZVS phase-shift converters. The operating junction and storage temperature are between -55 and 150℃. The MOSFET STW30NM60D is in the TO-247 package with 312W power dissipation.

STW30NM60D Features
High dv/dt and avalanche capabilities
100% avalanche rated
Low input capacitance and gate charge
Low gate input resistance
Fast internal recovery diode

STW30NM60D Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STW30NM60D More Descriptions

N-CHANNEL 600V - 0.125Ohm - 30A TO-247 Fast Diode MDmesh MOSFET
Power Field-Effect Transistor, 30A I(D), 600V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
MOSFET, N, TO-247; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:30A; Resistance, Rds on:0.145R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:TO-247 (SOT-249); Current, Idm pulse:120A; RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to STW30NM60D.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Resistance

Lifecycle Status

Factory Lead Time

Number of Pins

Weight

Number of Channels

Turn On Delay Time

Drain to Source Voltage (Vdss)

Height

Length

Width

Radiation Hardening

View Compare
STW30NM60D

STMicroelectronics

Through Hole

Through Hole

TO-247-3

SILICON

-55°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

30A

NOT SPECIFIED

STW30N

3

R-PSFM-T3

Not Qualified

1

600V

312W Tc

Single

34A

ENHANCEMENT MODE

312W

N-Channel

SWITCHING

145m Ω @ 15A, 10V

5V @ 250μA

2520pF @ 25V

30A Tc

115nC @ 10V

33ns

10V

±30V

35 ns

75 ns

30A

TO-247AC

30V

0.145Ohm

600V

740 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
STW30NM60ND

STMicroelectronics

Through Hole

Through Hole

TO-247-3

SILICON

150°C TJ

Tube

FDmesh™ II

-

Obsolete

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STW30N

3

R-PSFM-T3

Not Qualified

1

600V

190W Tc

Single

34A

ENHANCEMENT MODE

190W

N-Channel

SWITCHING

130m Ω @ 12.5A, 10V

5V @ 250μA

2800pF @ 50V

25A Tc

100nC @ 10V

50ns

10V

±25V

75 ns

110 ns

25A

-

25V

-

600V

900 mJ

ROHS3 Compliant

Lead Free

130mOhm

-

-

-

-

-

-

-

-

-

-

-

STW30NM60D vs STW30NM60ND
STW33N60M2

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

-55°C~150°C TJ

Tube

MDmesh™ II Plus

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STW33N

-

-

-

-

-

190W Tc

Single

-

-

190W

N-Channel

-

125m Ω @ 13A, 10V

4V @ 250μA

1781pF @ 100V

26A Tc

45.5nC @ 10V

9.6ns

10V

±25V

9 ns

109 ns

26A

-

25V

-

-

-

ROHS3 Compliant

Lead Free

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

3

38.000013g

1

16 ns

600V

20.15mm

15.75mm

5.15mm

-

STW30NM60D vs STW33N60M2
STW34N65M5

STMicroelectronics

Through Hole

Through Hole

TO-247-3

SILICON

150°C TJ

Tube

MDmesh™ V

-

Active

1 (Unlimited)

3

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

STW34N

-

-

-

1

-

190W Tc

Single

-

ENHANCEMENT MODE

190W

N-Channel

SWITCHING

110m Ω @ 14A, 10V

5V @ 250μA

2700pF @ 100V

28A Tc

62.5nC @ 10V

-

10V

±25V

-

59 ns

28A

-

25V

-

650V

-

ROHS3 Compliant

Lead Free

110mOhm

ACTIVE (Last Updated: 8 months ago)

17 Weeks

3

-

-

59 ns

-

20.15mm

15.75mm

5.15mm

No

STW30NM60D vs STW34N65M5