STMicroelectronics STW34NB20

Name: STW34NB20
Brand: STMicroelectronics
SKU: 2488437-STW34NB20
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW34NB20

Manufacturer:: STMicroelectronics

Ventron No:: 2488437-STW34NB20

Description:: MOSFET N-CH 200V 34A TO-247

ECAD Model:

Datasheet:: STW34NB20

Specifications

STMicroelectronics STW34NB20 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW34NB20.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
45.359237mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
75mOhm
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
34A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW34N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
180W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
180W
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
34A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
18 ns
Continuous Drain Current (ID)
34A
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
200V
Avalanche Energy Rating (Eas)
650 mJ
Turn On Time-Max (ton)
95ns
Height
20.15mm
Length
15.75mm
Width
5.15mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW34NB20 Description
The STMicroelectronics STW50NB20 is a PowerMESHTM MOSFET using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent-pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STW34NB20 Features
Typical RDS(ON)=0.062Ω
Extremely high dv/dt capabilities
100% avalanche tested
Very Low intrinsic capacitances
Gate charge minimized

STW34NB20 Applications
High current, high-speed switching
Switch-mode power supplies (SMPS)
DC-AC converters for welding
Equipment and uninterruptible
Power supplies and motor drive

STW34NB20 More Descriptions

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.062Ohm;ID 34A;TO-247;PD 180W;VGS /-30V
N-Channel 200V - 0.062 Ohm - 34A TO-247 PowerMESH(TM) MOSFET
Power Field-Effect Transistor, 34A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:34A; On Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247 ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to STW34NB20.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Turn On Time-Max (ton)

Height

Length

Width

RoHS Status

Lead Free

JESD-30 Code

Voltage

Current

Turn-Off Delay Time

Lifecycle Status

Factory Lead Time

Surface Mount

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Terminal Position

Case Connection

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

View Compare
STW34NB20

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

45.359237mg

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

75mOhm

Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

200V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

34A

NOT SPECIFIED

STW34N

3

Not Qualified

1

180W Tc

Single

ENHANCEMENT MODE

180W

30 ns

N-Channel

SWITCHING

75m Ω @ 17A, 10V

5V @ 250μA

3300pF @ 25V

34A Tc

80nC @ 10V

40ns

10V

±30V

18 ns

34A

TO-247AC

30V

200V

650 mJ

95ns

20.15mm

15.75mm

5.15mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW30NM60ND

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

-

SILICON

150°C TJ

Tube

FDmesh™ II

-

Obsolete

1 (Unlimited)

3

EAR99

130mOhm

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STW30N

3

Not Qualified

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

N-Channel

SWITCHING

130m Ω @ 12.5A, 10V

5V @ 250μA

2800pF @ 50V

25A Tc

100nC @ 10V

50ns

10V

±25V

75 ns

25A

-

25V

600V

900 mJ

-

-

-

-

ROHS3 Compliant

Lead Free

R-PSFM-T3

600V

34A

110 ns

-

-

-

-

-

-

-

-

-

-

STW34NB20 vs STW30NM60ND
STW3N170

STMicroelectronics

-

Through Hole

TO-247-3

-

-

-

-55°C~150°C TJ

Tube

PowerMESH™

-

Active

1 (Unlimited)

-

EAR99

-

-

-

FET General Purpose Powers

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STW3N

-

-

-

160mW

-

-

-

-

N-Channel

-

13 Ω @ 1.3A, 10V

5V @ 250μA

1100pF @ 100V

2.6A Tc

44nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

12 Weeks

NO

Single

1700V

2.3A

-

-

-

-

STW34NB20 vs STW3N170
STW38NB20

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

-

FET General Purpose Power

200V

MOSFET (Metal Oxide)

NOT SPECIFIED

-

38A

NOT SPECIFIED

STW38N

3

Not Qualified

1

180W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

65m Ω @ 19A, 10V

5V @ 250μA

3800pF @ 25V

38A Tc

95nC @ 10V

-

10V

±30V

-

38A

TO-247AC

-

-

550 mJ

-

-

-

-

Non-RoHS Compliant

Contains Lead

R-PSFM-T3

-

-

-

-

-

-

SINGLE WITH BUILT-IN DIODE

-

-

SINGLE

ISOLATED

0.065Ohm

152A

STW34NB20 vs STW38NB20