STMicroelectronics STW26NM60

Name: STW26NM60
Brand: STMicroelectronics
SKU: 2488548-STW26NM60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW26NM60

Manufacturer:: STMicroelectronics

Ventron No:: 2488548-STW26NM60

Description:: MOSFET N-CH 600V 30A TO-247

ECAD Model:

Datasheet:: STW26NM60

Specifications

STMicroelectronics STW26NM60 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW26NM60.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
135mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
30A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW26N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
313W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
313W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
135m Ω @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
102nC @ 10V
Rise Time
22ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
30A
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
26A
Drain to Source Breakdown Voltage
600V
Avalanche Energy Rating (Eas)
740 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW26NM60 Description
The STW26NM60 is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.

STW26NM60 Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance

STW26NM60 Applications High voltage converters

STW26NM60 More Descriptions

N-Channel 600V - 0.125Ohm - 26A - TO-247 Zener-Protected MDmesh(TM) POWER MOSFET
Power Field-Effect Transistor, 30A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N Channel Mosfet, 600V, 30A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STW26NM60
MOSFET, N, TO-247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:30A; Resistance, Rds On:0.135ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Current, Idm Pulse:120A; Power, Pd:313W; Transistors, No. of:1; Voltage, Vds Max:600V

Product Comparison

The three parts on the right have similar specifications to STW26NM60.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Terminal Position

Configuration

Turn On Delay Time

Drain to Source Voltage (Vdss)

Threshold Voltage

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Height

Length

Width

REACH SVHC

Radiation Hardening

JESD-30 Code

Drain-source On Resistance-Max

View Compare
STW26NM60

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

135mOhm

Matte Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

30A

NOT SPECIFIED

STW26N

3

Not Qualified

1

313W Tc

Single

ENHANCEMENT MODE

313W

ISOLATED

N-Channel

SWITCHING

135m Ω @ 13A, 10V

5V @ 250μA

2900pF @ 25V

30A Tc

102nC @ 10V

22ns

10V

±30V

20 ns

14 ns

30A

30V

26A

600V

740 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW23NM50N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

190mOhm

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STW23N

3

-

1

125W Tc

-

ENHANCEMENT MODE

125W

-

N-Channel

SWITCHING

190m Ω @ 8.5A, 10V

4V @ 250μA

1330pF @ 50V

17A Tc

45nC @ 10V

19ns

10V

±25V

29 ns

71 ns

17A

25V

-

-

254 mJ

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 7 months ago)

16 Weeks

SINGLE

SINGLE WITH BUILT-IN DIODE

6.6 ns

500V

3V

68A

500V

20.15mm

15.75mm

5.15mm

No SVHC

No

-

-

STW26NM60 vs STW23NM50N
STW24NK55Z

STMicroelectronics

Through Hole

Through Hole

TO-247-3

-

SILICON

150°C TJ

Tube

SuperMESH™

-

Obsolete

1 (Unlimited)

3

-

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STW24N

3

Not Qualified

1

285W Tc

Single

ENHANCEMENT MODE

285W

-

N-Channel

SWITCHING

220m Ω @ 11.5A, 10V

4.5V @ 100μA

4397.5pF @ 25V

23A Tc

130nC @ 10V

35ns

10V

±30V

88 ns

136 ns

23A

30V

-

550V

400 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

92A

-

-

-

-

-

-

R-PSFM-T3

0.22Ohm

STW26NM60 vs STW24NK55Z
STW28N60DM2

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

MDmesh™ DM2

-

Active

1 (Unlimited)

-

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

STW28N

-

-

-

170W Tc

-

-

-

-

N-Channel

-

160m Ω @ 10.5A, 10V

5V @ 250μA

1500pF @ 100V

21A Tc

34nC @ 10V

-

10V

±25V

-

-

21A

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

17 Weeks

-

-

-

600V

4V

-

-

-

-

-

No SVHC

-

-

-

STW26NM60 vs STW28N60DM2