STMicroelectronics STW25NM50N

Name: STW25NM50N
Brand: STMicroelectronics
SKU: 2488564-STW25NM50N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW25NM50N

Manufacturer:: STMicroelectronics

Ventron No:: 2488564-STW25NM50N

Description:: MOSFET N-CH 500V 22A TO-247

ECAD Model:

Datasheet:: STx25NM50N

Specifications

STMicroelectronics STW25NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW25NM50N.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
140mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
550V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
22A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STW25N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
140m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2565pF @ 25V
Current - Continuous Drain (Id) @ 25°C
22A Tc
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Rise Time
23ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
22A
Threshold Voltage
3V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
88A
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STW25NM50N Description
STW25NM50N is a 500v N-channel MDmesh? II Power MOSFET. This STMicroelectronics STW25NM50N is realized with the second generation of MDmesh? Technology. This revolutionary MOSFET associates a new vertical structure to the Company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charge. It is, therefore, suitable for the most demanding high-efficiency converters.

STW25NM50N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 500v
Gate- source voltage: ?à25v

STW25NM50N Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STW25NM50N More Descriptions

Mosfet Transistor, N Channel, 22 A, 600 V, 140 Mohm, 10 V, 3 V |Stmicroelectronics STW25NM50N
N-channel 500V - 0.11Ohm - 22A - TO-220 /FP- I2/D2PAK - TO-247
IGBTs Insulated Gate Bipolar Transistor IGBT MOSFET Driver
Power Field-Effect Transistor, 22A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 500V, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.14ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 160W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 22A; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; N-channel Gate Charge: 84nC; No. of Transistors: 1; On State resistance @ Vgs = 10V: 140mohm; Pulse Current Idm: 88A; Rate of Voltage Change dv / dt: 44V/ns; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 500V; Voltage Vgs Max: 25V; Voltage Vgs Rds N Channel: 10V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 2V

Product Comparison

The three parts on the right have similar specifications to STW25NM50N.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

REACH SVHC

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Terminal Position

Configuration

Turn On Delay Time

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

Drain-source On Resistance-Max

View Compare
STW25NM50N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

140mOhm

Tin (Sn)

FET General Purpose Power

550V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

22A

NOT SPECIFIED

STW25N

3

Not Qualified

1

160W Tc

Single

ENHANCEMENT MODE

160W

N-Channel

SWITCHING

140m Ω @ 11A, 10V

4V @ 250μA

2565pF @ 25V

22A Tc

84nC @ 10V

23ns

10V

±25V

22 ns

75 ns

22A

3V

TO-247AC

25V

500V

88A

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW23NM50N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

190mOhm

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STW23N

3

-

1

125W Tc

-

ENHANCEMENT MODE

125W

N-Channel

SWITCHING

190m Ω @ 8.5A, 10V

4V @ 250μA

1330pF @ 50V

17A Tc

45nC @ 10V

19ns

10V

±25V

29 ns

71 ns

17A

3V

-

25V

-

68A

No SVHC

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 7 months ago)

16 Weeks

SINGLE

SINGLE WITH BUILT-IN DIODE

6.6 ns

500V

500V

254 mJ

20.15mm

15.75mm

5.15mm

No

-

STW25NM50N vs STW23NM50N
STW28N60DM2

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

-

-55°C~150°C TJ

Tube

MDmesh™ DM2

-

Active

1 (Unlimited)

-

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

STW28N

-

-

-

170W Tc

-

-

-

N-Channel

-

160m Ω @ 10.5A, 10V

5V @ 250μA

1500pF @ 100V

21A Tc

34nC @ 10V

-

10V

±25V

-

-

21A

4V

-

-

-

-

No SVHC

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

17 Weeks

-

-

-

600V

-

-

-

-

-

-

-

STW25NM50N vs STW28N60DM2
STW21NM60N

STMicroelectronics

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

17A

NOT SPECIFIED

STW21N

3

Not Qualified

1

140W Tc

Single

ENHANCEMENT MODE

140W

N-Channel

SWITCHING

220m Ω @ 8.5A, 10V

4V @ 250μA

1900pF @ 50V

17A Tc

66nC @ 10V

15ns

10V

±25V

31 ns

84 ns

17A

3V

TO-247AD

25V

600V

68A

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

0.22Ohm

STW25NM50N vs STW21NM60N