STMicroelectronics STW21NM60ND

Name: STW21NM60ND
Brand: STMicroelectronics
SKU: 2479031-STW21NM60ND
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STW21NM60ND

Manufacturer:: STMicroelectronics

Ventron No:: 2479031-STW21NM60ND

Description:: MOSFET N-CH 600V 17A TO-247

ECAD Model:

Datasheet:: STW21NM60ND

Specifications

STMicroelectronics STW21NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STW21NM60ND.

Factory Lead Time
42 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
220mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW21N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
220m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
16ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
48 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
68A
Height
20.15mm
Length
15.75mm
Width
5.15mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The STW21NM60ND is an N-channel 600 V, 0.17 ? typ., 17 A FDmesh? II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages. The second generation of MDmeshTM technology is used to create these FDmeshTM II Power MOSFETs with intrinsic fast-recovery body diodes. These ground-breaking devices have an incredibly low on-resistance and excellent switching performance thanks to a new strip-layout vertical structure. They are perfect for ZVS phase-shift converters and bridge topologies.

Features
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
Intrinsic fast-recovery body diode
Worldwide best RDS(on)*area amongst the fast recovery diode devices
100% avalanche tested

Applications
Switching Applications
Uninterruptible Power Supplies (UPS)
Small Motor Control
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)

STW21NM60ND More Descriptions

MOSFET Transistor, N Channel, 17 A, 600 V, 0.17 ohm, 10 V, 4 V RoHS Compliant: Yes
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package
Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 600V, 17A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 140W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to STW21NM60ND.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Rated DC

Current Rating

JESD-30 Code

JEDEC-95 Code

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Lifecycle Status

Terminal Position

Configuration

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

View Compare
STW21NM60ND

STMicroelectronics

42 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

FDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

220mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW21N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

18 ns

N-Channel

SWITCHING

220m Ω @ 8.5A, 10V

5V @ 250μA

1800pF @ 50V

17A Tc

60nC @ 10V

16ns

10V

±25V

48 ns

70 ns

17A

4V

25V

600V

68A

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STW29NK50ZD

STMicroelectronics

-

Through Hole

Through Hole

TO-247-3

-

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW29N

3

1

350W Tc

Single

ENHANCEMENT MODE

350W

45 ns

N-Channel

SWITCHING

130m Ω @ 14.5A, 10V

4.5V @ 150μA

6450pF @ 25V

29A Tc

200nC @ 10V

43ns

10V

±30V

25 ns

133 ns

29A

-

30V

500V

116A

-

-

-

-

No

ROHS3 Compliant

Lead Free

500V

29A

R-PSFM-T3

TO-247AC

0.13Ohm

500 mJ

-

-

-

-

-

-

-

-

-

STW21NM60ND vs STW29NK50ZD
STW23NM50N

STMicroelectronics

16 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™ II

e3

Active

1 (Unlimited)

3

EAR99

190mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW23N

3

1

125W Tc

-

ENHANCEMENT MODE

125W

6.6 ns

N-Channel

SWITCHING

190m Ω @ 8.5A, 10V

4V @ 250μA

1330pF @ 50V

17A Tc

45nC @ 10V

19ns

10V

±25V

29 ns

71 ns

17A

3V

25V

-

68A

20.15mm

15.75mm

5.15mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

254 mJ

ACTIVE (Last Updated: 7 months ago)

SINGLE

SINGLE WITH BUILT-IN DIODE

500V

500V

-

-

-

-

STW21NM60ND vs STW23NM50N
STW21NM60N

STMicroelectronics

-

Through Hole

Through Hole

TO-247-3

3

SILICON

150°C TJ

Tube

MDmesh™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STW21N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

N-Channel

SWITCHING

220m Ω @ 8.5A, 10V

4V @ 250μA

1900pF @ 50V

17A Tc

66nC @ 10V

15ns

10V

±25V

31 ns

84 ns

17A

3V

25V

600V

68A

-

-

-

No SVHC

-

ROHS3 Compliant

Lead Free

600V

17A

-

TO-247AD

0.22Ohm

-

-

-

-

-

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

STW21NM60ND vs STW21NM60N